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    7C SMD TRANSISTOR Search Results

    7C SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    7C SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode T42

    Abstract: No abstract text available
    Text: SPD 30N03L Infineon technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode V ^DS Drain-Source on-state resistance WDS on 0.012 f i 30 A b Continuous drain current • Avalanche rated 30 Drain source voltage • Logic Level


    OCR Scan     		PDF 30N03L P-T0252 Q67040-S4148-A2 Q67040-S4149-A2 SPU30N03L SPD30N03L S35bG5 SQT-89 B535bQ5 D13377Ã smd diode T42

    7C SMD TRANSISTOR

    Abstract: No abstract text available
    Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A


    OCR Scan     		PDF O-220 BUZ101 C67078-S1350-A2 7C SMD TRANSISTOR

    SPB80N03L

    Abstract: spp60n
    Text: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q


    OCR Scan     		PDF SPP80N03L SPB80N03L SPB80N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4735-A2 Q67040-S4735-A3 spp60n

    Untitled

    Abstract: No abstract text available
    Text: BUZ 30A Infineon Iftchnologi«* SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDS b ^DS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 £i TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1303-A3 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BUZ 21 Infineon •chnologiês SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b f f DS(on Package BUZ 21 100 V 21 A 0.085 Q TO-220 AB ’ Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1308-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n


    OCR Scan     		PDF 70N10L SPP70N10L SPB70N10L P-T0220-3-1 Q67040-S4175 P-T0263-3-2 Q67040-S4170 S35bQ5 Q133777 SQT-89

    Untitled

    Abstract: No abstract text available
    Text: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n


    OCR Scan     		PDF 07N20 67040-S 112-A S35bQ5 SQT-89 B535bQ5 D13377Ã B235bG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ103AL Vbs 50 V to 35 A ^bs<on


    OCR Scan     		PDF O-220 BUZ103AL C67078-S1357-A2 103AL

    kd smd transistor

    Abstract: No abstract text available
    Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated


    OCR Scan     		PDF 28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor

    BUZ100

    Abstract: to 220 smd BUZ100 SIEMENS
    Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • d tfd f rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ100 Vbs 50 V b 60 A f%>S on 0.018 Q Package


    OCR Scan     		PDF O-220 BUZ100 C67078-S1348-A2 BUZ100 to 220 smd BUZ100 SIEMENS

    m574

    Abstract: No abstract text available
    Text: BUZ 103 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ103 50 V Id 40 A ^DS on Package Ordering Code


    OCR Scan     		PDF O-220 BUZ103 C67078-S1352-A2 8235bOS GPT35155 235bD5 m574

    SmD TRANSISTOR 42T

    Abstract: smd 42t
    Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100


    OCR Scan     		PDF O-220 BUZ100 C67078-S1348-A2 6235bDS SmD TRANSISTOR 42T smd 42t

    transistor marking smd 7c

    Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
    Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3


    OCR Scan     		PDF SPUX7N60S5 SPDX7N60S5 VPT09D51 VPT09050 X7N60S5 P-T0251-3-1 P-T0252 transistor marking smd 7c TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPHX0N60S5 Target data sheet Cool MOS Power Transistor • Worldwide bestfibs on in TO 218 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated 1 2 3 • 150°C operating temperature G D S Type SPHX0N60S5


    OCR Scan     		PDF SPHX0N60S5 X0N60S5 P-T0218-3-1

    SPUX3N60S5

    Abstract: on semiconductor marking code dpack VPT09050
    Text: SIEM EN S SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos 0n> in D-Pack • N-Channel • Enhancement mode VPT09D51 VPT09050 • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 3 • 150°C operating temperature


    OCR Scan     		PDF SPUX3N60S5 SPDX3N60S5 SPDX3N60S5 VPT09D51 VPT09050 X3N60S5 P-T0251-3-1 P-T0252 on semiconductor marking code dpack VPT09050

    Untitled

    Abstract: No abstract text available
    Text: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß


    OCR Scan     		PDF 08P06P SPD08P06P P-T0252 Q67040-S4153-A2 P-T0251-3-1 SPU08P06P 67040-S4154-A2 235b05 G133S60

    smd code book transistor

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
    Text: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package


    OCR Scan     		PDF OT-223 Q62702-S653 E6327 fiS35bG5 D133777 SQT-89 O-92-E6288 smd code book transistor TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO

    A4t 29 smd

    Abstract: smd a4t
    Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1310-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A4t 29 smd smd a4t

    Untitled

    Abstract: No abstract text available
    Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vbs b ^ D S o n Package Ordering Code BUZ 73 AL 200 V 5.5 A 0.6 Q TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1328-A3 SQT-89 D13377Ã 35bG5

    smd transistor A7 sot 23

    Abstract: No abstract text available
    Text: BSP 89 Inf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ^DS k> WDS(on) Package Marking BSP 89 240 V 0.36 A 6Q SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S652 E6327 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 G133771 smd transistor A7 sot 23

    cc 3025 diode

    Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
    Text: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated


    OCR Scan     		PDF BUZ110S BUZ110S P-T0220-3-1 Q67040-S4005-A2 E3045A P-TC263-3-2 Q67040-S4005-A6 E3045 cc 3025 diode 5T4 tube MC 140 transistor 8235 smd transistor h7 transistor smd marking CODE Wb transistor marking smd 7c

    transistor buz 104

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package


    OCR Scan     		PDF O-220 C67078-S1353-A2 transistor buz 104

    siemens 12V small relays

    Abstract: transistor z15 smd IN67 BTS650PE3230 BTS650P rlu 210 cd 4534 FET RV power transistor X 52 siemens profet
    Text: fi2 3 S b D S SIEM ENS □ D ‘ì 2 tl S 4 AM D PROFET Target Data Sheet BTS 650 P Smart Highside High Current Power Switch Features Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection including load dump


    OCR Scan     		PDF fi23SbGS O-220ABA7 BTS650P Q67060-tbd-tbd 220AB/7, E3230 067060-tbd-tbd siemens 12V small relays transistor z15 smd IN67 BTS650PE3230 rlu 210 cd 4534 FET RV power transistor X 52 siemens profet

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PROFET Target Data Sheet BTS660P Smart Highside High Current Power Switch Vbb AZ 70 Output clamp Operating voltage VÒN(CL) 60 Vbb(on) On-state resistance RON Load current (ISO) /L(ISO) 44 A Short circuit current limitation Current sense ratio /L(SCp)


    OCR Scan     		PDF BTS660P 220AB/7, E3180 BTS660P E3180A Q67060-S6308-A4 1998-Dec-21