7C259 Search Results

cp 9AA

Contextual Info: PRELIMINARY r v p p r Q c = SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM Features F unctional D escription • High speed: 83-MHz operation T he CY 7C258 and CY 7C259 are 2 K x 16 C M O S PR O M S specifically designed fo r use in state m achine applications.

Contextual Info: s CY7C258 7C259 ~ - .V CYPRESS SEMICONDUCTOR 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • T h e CY 7C258 and CY 7C259 are 2K x 16 C M O S PR O M s specifically designed for use in state m achine applications. H igh speed: 100-M H z op eration

Contextual Info: This is an abbreviated datasheet. The complete CY7C258/9 datasheet is listed in the PROM section of this Data Book. "ZX CYPRESS SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM F eatures F unctional D escrip tion • High speed: 100-MHz operation The CY 7C258 and CY 7C259 are 2K x 16

sumitomo epoxy 6300h

Abstract: sumitomo epoxy eme6300h sumitomo 6300h mold compound prime p27 EME-6300H mos die Sumitomo 1000
Contextual Info: Qualification Report May, 1993, QTP 92114 Version 1.0 2K X 16 PROM FAB2 QUALIFICATION MARKETING PART NUMBER DEVICE DESCRIPTION 7C258 2K x 16 Reprogrammable State Machine PROM 7C259 2K x 16 Reprogrammable State Machine PROM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

Contextual Info: CY7C258 7C259 CYPRESS 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation — tcp = 10 ns T h e CY 7C258 and CY 7C259 are 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications.

c2581

Abstract: c258 380017 h67 YW 333Q C2584 AS1729
Contextual Info: CY7C258 7C259 CYPRESS SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 an d CY 7C259 are 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications.

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

c258

Abstract: CERAMIC LEADLESS CHIP CARRIER h67 YW PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
Contextual Info: CY7C258 7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and 7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR Features 2K x 16 Reprogrammable State Machine PROM Functional Description The CY7C258 and 7C259 are 2K x 16 CMOS PROMS specifically designed for — tcp = 12 ns use in state machine applications. — tcKO = 9 ns State machines are one of the most com­

Contextual Info: Revision: Tuesday, December 2 2 ,1992a Wftl* CY7C258 7C259 X'; CYPRESS — ' SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation — tcp = 10 ns — tcKO = 8 ns — tAS = 2 ns • 16-bit-wide state word

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: High Performance 32Kx9 CMOS SRAM II 7C259 7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs

c258

Abstract: 333Q TCSV
Contextual Info: CYPRESS SE MI CON DUCTOR 4bE D —-r ^ P s s te ^ R E L I M I 1*3 CYPRESS • •• SEMICONDUCTOR B SSflRbbE 0Q0b773 7 C3 CYP N A R — .-— CY7C258 7C259 Y "1" 1~= 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 83-MHz operation

AS7C259-15PC

Abstract: AS7C259-15JC
Contextual Info:  $6& 9.ð&02665$0 HDWXUHV • Low power consumption - Active: 633 mW max 10 ns cycle) - Standby: 11 mW max, CMOS I/O - Very low DC component in active power • 2.0V data retention • Equal access and cycle times /RJLFEORFNGLDJUDP 3LQDUUDQJHPHQW

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

Contextual Info: High Performance 32Kx9 CMOS SRAM II 7C259 7C259L 32 Kx 9 C M O S S R A M C o m m o n I/O {F E A TU R E S • Organization: 32,768 words x 9 bits • 2.0V data retention (L version) • High Speed - Industry's fastest OE Access Time 12/15/20/25/35 ns Address access time

Contextual Info: H ¡j>li P n ' l o m u m r S Z K x 1- C M O S SK A M •■ \ S 7 ' 2 S l) \ S 7 ( ’ Z S 4 |. A II Ì2 K X 9 C M O S S MA M • Organization: 32,768 words x 9 bits • High speed - 1 2 /1 5 /2 0 /2 S /3 5 ns address access time - 3 / 4 / 5 / 6 / 8 ns output enable access time

Contextual Info: 32Kx9 Fast SRAM 7C259 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-8 ns Vcc GND ♦ Low power - 633 mW @ 100 MHz - 11 mW @ 10 MHz standby AO A1 - 2.75 mW @ 10 MHz standby: L version A2 A3 ♦ Automatic CE1/CE2 power down

27C258

Abstract: C258 c2581
Contextual Info: CY7C258 7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and 7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns

Contextual Info: High Performance 32KX9 A S7C 259 A S7C 259L C M O S SRA M 3 2 K x 9 CMOS SRAM • Easy memory expansion with CEI, CE2, and OE inputs • TTL-compatible, three-state 1/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ • ESD protection > 2 0 0 0 volts

Contextual Info: CY7C258 7C259 CYPRESS 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY 7C258 an d 7C259 are 2K x 16 C M O S P R O M s specifically designed for u se in state m achine applications. — tcp = 10 ns

0Q004

Abstract: 41516 taa 723
Contextual Info: High Performance 32Kx9 CMOS SRAM II 7C259 7C259L 32Kx9 CMOS SRAM Common I/O FEATU RES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tim e • Easy memory expansion with CE1, CE2, and OE inputs

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A