7MMV4101 Search Results

7MMV4101

Abstract: 775402
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR 0005-06 Product Affected: 7MMV4101 DATE: Manufacturing Location Affected: Date Effective: 9/3/00 Contact: Title: Phone #: Fax #: E-mail:

Contextual Info: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

7MMV4101S10BG

Abstract: IDT71V124 IDT7MMV4101
Contextual Info:  PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns

IDT71V124

Abstract: IDT7MMV4101
Contextual Info: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

IDT71V124

Abstract: IDT7MMV4101 1 megabit 128K x 8 SRAM
Contextual Info: PRELIMINARY 7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

MV4101

Contextual Info: PRELIMINARY IDT7MM V4101 128K x 24 THREE M EG AB IT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con­ structed on an multilayer laminate substrate using three 3.3V, 128K x 8 IDT71V124 static RAMS encapsulated in a Ball

Contextual Info: PRELIMINARY I DT7MM V 4 1 01 128K x 24 THREE M E G A B I T 3.3V C M O S STATIC RAM F E A TU R E S : DE S CR IP T IO N: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con­ structed on an m ultilayer laminate substrate using three 3.3V,

MT 5388 BGA

Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
Contextual Info: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

7MMV4101

Abstract: IDT71V124 IDT7MMV4101 4083
Contextual Info: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply

IDT71V124

Abstract: IDT7MMV4101
Contextual Info:  PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns

IDT71V124

Abstract: IDT7MMV4101
Contextual Info: PRELIMINARY 7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

4083

Abstract: IDT71V124 IDT7MMV4101
Contextual Info: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply

bg1012

Contextual Info: PRELIMINARY 7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity

Contextual Info: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply

Contextual Info: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con­ structed on an multilayer laminate substrate using three 3.3V,

Contextual Info: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con­ structed on an multilayer laminate substrate using three 3.3V,

UM61256FK-15

Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch