7N60 MOSFET Search Results

7n60f

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7n60b

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N60B

Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60m

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7n60b

Abstract: tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-R Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60G-TF3-T

Abstract: 7N60 7n60f 7n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N60G-x-TF1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60G-TF3-T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N60

Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7n60f

Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60

Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60B

Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60

Contextual Info: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

7N60

Abstract: e-bike CYStech Electronics
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN7N60FP Spec. No. : C409FP Issued Date : 2008.09.02 Revised Date : 2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;

7N60

Contextual Info: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices

7N60

Abstract: OF 7N60 MIL-HDBK-263
Contextual Info: E 7N60 VDSS=600V; ID=7.0A; RDS ON =1.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage