7N60L Search Results
7N60L Price and Stock
Rochester Electronics LLC FGPF7N60LSDTUIGBT 600V 14A TO-220F-3 |
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FGPF7N60LSDTU | Tube | 4,927 | 446 |
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onsemi FGPF7N60LSDTUIGBT 600V 14A TO-220F-3 |
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FGPF7N60LSDTU | Tube | 1,000 |
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Helical Wire Inc M4X.7N6.0L |
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M4X.7N6.0L | 5 |
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Fairchild Semiconductor Corporation FGPF7N60LSDTUInsulated Gate Bipolar Transistor, 14A, 600V, N-Channel, TO-220AB |
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FGPF7N60LSDTU | 4,927 | 1 |
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Fairchild Semiconductor Corporation FGPF7N60LSDElectronic Component |
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FGPF7N60LSD | 10 |
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7N60L Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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7N60L | Unisonic Technologies | 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET | Original | |||
7N60L-TA3-T | Unisonic Technologies | 7.4 Amps, 600 Volts N-CHANNEL MOSFET | Original |
7N60L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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UTC7N60L
Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode
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7N60L 7N60L 7N60LL QW-R502-189 UTC7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode | |
UTC7N60L
Abstract: 7N60L 7N60LL power mosfet 600v 7N60L-A
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7N60L 7N60L 7N60LL 7N60LG QW-R502-189 UTC7N60L 7N60LL power mosfet 600v 7N60L-A | |
7n60bContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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7N60L QW-R502-076 7n60b | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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7N60-Q 7N60-Q 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-983. | |
7N60B
Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
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7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60 | |
7n60fContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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7N60-F 7N60-F 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60t QW-R502-982. 7n60f | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076. | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
Original |
O-220 O-220F 7N60L QW-R502-076 | |
7N60G-TF3-T
Abstract: 7N60 7n60f 7n60l
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7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T 7N60 7n60f 7n60l | |
7N60G-x-TF1Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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O-220 O-220F 7N60-F/7N60-L/7N60-M/7N60-Q) QW-R502-076 7N60G-x-TF1 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TFt QW-R502-076. | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TFt QW-R502-076. | |
7N60mContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7N60-M 7N60-M 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TFt QW-R502-996. 7N60m | |
7n60b
Abstract: tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet
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7N60L 7N60G QW-R502-076 7n60b tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet | |
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7n60f
Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
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O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET | |
7N60G-TF3-TContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T | |
7n60f
Abstract: UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60
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O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60 | |
7N60
Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
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O-220 O-220F 7N60L QW-R502-076 7N60 OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T | |
ge tube companyContextual Info: 7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage |
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FGPF7N60LSD FGPF7N60LSD O-220F FGPF7N60LSDTU ge tube company | |
7N60
Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
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O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7N60 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b | |
7N60B
Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
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O-220 O-220F O-220F1 O-262 QW-R502-076 7N60B TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60 |