7TH4142 Search Results

ADC CCIR 601

Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
Contextual Info: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required

KMM466S203BT-F0

Abstract: KMM466S203BT-F2
Contextual Info: KMM466S203BT NEW JEDEC SDRAM MODULE KMM466S203BT S D R A M SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203BT is a 2M bitx 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM44C1004C

Contextual Info: KM44C1004C/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM44C1004C/CL/CSL-5 50ns 13ns 90ns 20ns KM44C1D04C/CL/CSL-6 60ns 15ns 110ns 24ns KM44C1004C/CUCSL-7

Contextual Info: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

transistor tip 412

Contextual Info: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE Vceo(sus : 250 to 400V) 1A RETED COLLECTOR CURRENT T O -2 2 0 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) C h a ra c te ristic Sym bol Collector-Base Voltage : TIP47

Contextual Info: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.

KM29V16000ATS

Contextual Info: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

A12CZ

Abstract: KM68V1000BL
Contextual Info: K M 68V 1000B L /L -L CMOS SRAM 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 7 0 ,1 0 0 n s m a x. • L ow P o w e r D issip atio n S ta n d b y(C M O S ): 1 8 0 |iW (m a x.)L -V e rsio n 5 4 ^ W (m a x .)L L -V e rs io n

KM44C4100BK

Abstract: cd-rom circuit diagram D0345 KM44C4100B
Contextual Info: KM44C4100BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

KA9220B

Abstract: 9220B
Contextual Info: LINEAR INTEGRATED CIRCUIT KA9220B RF AMP + SSP FOR CDP The KA9220B is a 1-Chip BICMOS integrated circuit to perform the function of RF AMP and SSP Servo Signal Processor for Compact disc player applications. It consists of RF signal processing, focus servo, tracking servo, sled servo con­

Contextual Info: KM423 2W259 A Graphic Memory ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip The KM4232W259A is a 1M Byte Dual Ported DRAM array with added features that accelerate graphic operations in a GUI environment. A 256-bit internal bus allows transferring

Contextual Info: KM44C4003BK CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time