7W RF POWER TRANSISTOR NPN Search Results

nte357

Abstract: 7w RF POWER TRANSISTOR NPN transistor 828
Contextual Info: NTE357 Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: D Specified 28V, 175MHz Characteristics −

multi emitter transistor

Abstract: RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A NTE16003
Contextual Info: NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.

7w RF POWER TRANSISTOR NPN

Abstract: 2SC4524 2sc4524 mitsubishi
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4524 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers applications in 1.65GHz. O U T L IN E D R A W IN G Dimensions in mm FEATURES

25C45

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4524 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65GHz. Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. D im e n s io n s in m m

Contextual Info: MITSUBISHI RF POWER TRANSISTOR ooi?b?7 m m NPN EPITAXIAL PLANAR TYPE DISCRETION OUTLINE DRAWING 2SC3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATURES • High gain: Gpe^ 1 1 .5 d B r Po ^ 1 0 0 W

7w RF POWER TRANSISTOR NPN

Abstract: 2SC3021 12W 97 T-31E transistor 1.2w high power npn UHF transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION 2SC3021 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifiers applications. OUTLINE DRAWING D im en sions in m m FEATURES •

TRANSISTOR Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

rf 3021

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2S C 3021 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING D im e n s io n s in m m cally designed for UHF power amplifiers applications. FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H

MS1253

Contextual Info: MS1253 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter

transistor z5

Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
Contextual Info: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

2SC1967

Abstract: mitsubishi RF POWER TRANSISTOR RF POWER TRANSISTOR 470-MHz
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. FEATURES

Z1 Transistor

Abstract: MRF392
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

MRF392

Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

Contextual Info: L3UQn-m nni , 0017701 Tib MITSUBISHI RF POWER TRANSISTOR — NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4167 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r UHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m

2SC3240

Abstract: 7w RF POWER TRANSISTOR NPN TRANSISTOR 2sc3240 hf amplifier 100w
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3240 NPN EPITAXIAL PLANAR TY PE D ISCRETIO N OUTLINE DRAWING 2SC 3240 is a silicon NPN epitaxial planar typ e transistor D im e n s io n s in m m spe cifica lly designed fo r high pow er am plifiers in HF band. FEATURES •

NTE473

Contextual Info: NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages

2N3553

Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
Contextual Info: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver

2sc2904 TRANSISTOR

Abstract: 2SC2904 hf amplifier 100w T-40
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES

cb 10 b 60 kd

Abstract: 2SC4167 T-47
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4167 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2 S C 4167 is a silicon NPN epitaxial planar typ e transistor spe cifi­ OUTLINE DRAWING Dim ensions in mm cally designed fo r UHF pow er am plifiers applications. FEATURES •

5BP smd transistor data

Abstract: 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent
Contextual Info: MOTOROLA Order this document by TP3061/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3061 The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB