7Z08997 Search Results

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BAT18

Abstract: IEC134 marking code FV D0EM33S
Contextual Info: • bhSB'îBl D0E4335 SHE « A P X N AMER PHILIPS/DISCRETE BAT18 b7E D SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. QUICK REFERENCE DATA Continuous reverse voltage Forward current d.c.

Contextual Info: • bhSBTBl QQ2433S 542 * A P X N AUER PHILIPS/DISCRETE BAT18 I SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

Contextual Info: BAT18 y v SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Forward current d.c. Junction temperature Vr max. 35 V •f