8 A DIODE Search Results

806-AS

Contextual Info: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode

ixys dsei

Abstract: ixys dsei 8 806-AS
Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 8 IFAVM = 8 A VRSM A V VRRM VRRM = 600 V = 35 ns trr Type C TO-220 AC DSEI 8-06A V C 640 640 600 600 DSEI 8-06A DSEI 8-06AS C Maximum Ratings A A = Anode, C = Cathode TO-263 AA DSEI 8-06AS Symbol Test Conditions I FRMS

Contextual Info: PRODUCT Æ lltron CATAL ULTRA FAST RECOVERY RECTIFIERS 400V, 8 A , 50ns 500V, 8 A , 50ns 600V, 8 A , 50ns SDR08400 J A A ,JAB 5DR08500 JAA,JAB SDR08600 JAA,JAB MAXIMUM RATINGS PER DIODE FEATURES OPERATING JUNCTION TEMPERATURE RANGE STORAGE TEMPERATURE RANGE

BYC20X-600

Abstract: BYW29EX200 byv29-500 BYV42E-200 byv29x500 BYV34-600 BYV32E-100 BYR29-800 BYR29X-800 BYT79-600
Contextual Info: Power Diodes Ultrafast Diodes @IF A VF(typ) @150 ºC (V) 8 0,8 VRRM IF(AV) (V) 100 150 SOD59 (TO220AC) (A) t rr (typ) @25 ºC (ns) 8 20 BYW29E-100 SOD113 (2-pin SOT186A) SOT78 (TO220AB) 2 x 10 0,72 8 20 2 x 0.75 0,5 0,5 10 8 0,8 8 20 2 x 10 0,72 8 20 BYV32E-150

ixys dsei

Abstract: DSEI 806-AS ixys dsei 8 8-06A IXYS
Contextual Info: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM  IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5

8-06A IXYS

Abstract: ixys dsei 806-AS TO-283 8-06AS VRRM600V 806A
Contextual Info: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ms Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM  IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5

Contextual Info: DSP 8 VRRM = 800/1200 V IF RMS = 2x17 A IF(AV)M = 2x11 A Phase-leg Rectifier Diode VRSM VRRM V V Type 900 800 DSP 8-08A 1300 1200 TO-220 AB DSP 8-12A TO-263 AA 1 TO-263AB TAB 3 TO-220 AB 1 2 3 DSP 8-08AS DSP 8-08S DSP 8-12AS DSP 8-12S TO-263 AA 1 2 (TAB)

Phase-leg Rectifier Diode

Abstract: DSP 8-08S diode MS 1029
Contextual Info: DSP 8 VRRM = 800/1200 V IF RMS = 2x17 A IF(AV)M = 2x11 A Phase-leg Rectifier Diode VRSM VRRM V V Type 900 800 DSP 8-08A 1300 1200 TO-220 AB DSP 8-12A TO-263 AA 1 TO-263AB TAB 3 TO-220 AB 1 2 3 DSP 8-08AS DSP 8-08S DSP 8-12AS DSP 8-12S TO-263 AA 1 2 (TAB)

S5283

Contextual Info: Current Limiter Diodes Micmsemi : Part Number SM AJ5287 SM BJ5287 M S5286 MV5286 M X5286 S M A J5 2 8 6 SM BJ5286 M S S2 8 5 M V 5285 M X5285 S M A J5 2 8 5 SM BJ5285 M S5284 M V 5284 M X5284 S M A J5 2 8 4 SM BJ5284 M S5283 MV5283 M X5283 S M A J5 2 8 3 SM BJ5283

ds 35-12 e

Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
Contextual Info: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS

Contextual Info: Light Emitting Diodes 8 X 8 matrix displays LM-2064 Series T he LM -2 06 4 se rie s are 8 X 8 m a trix d isp la ys w h ich can be used in a w ide v a rie ty o f a p p lic a tio n s , in c lu d in g a l­ ►External dim ensions Unit: mm Single color type

QC300

Contextual Info: Approved C h e cke d Designed DEVELOPMENT SPECIFICATION T Orange Light Emitting Diode A P P L I C A T I ON Indicat iors M A T E R I A L InGaAiP O Attached U T L I N E A B S O L U T E M A X R TEMPORARY P / N : LN J 8 1 8 C 8 8 R A 1 • / A T I I *1 I FP M U M

esm diodes

Abstract: ESM 200 ESM 980-400 ESM 990-400 diodes byt DO-220 DO-220AB diodes byt 400 08400 Diodes de redressement
Contextual Info: new fast recovery rectifier diodes< 100 A nouvelles diodes de redressement ra p id e < 100 A Types VRRM V (A) 8 A / Tcase = 120°C Case trr (ns) Tj = 150°C BY 233-200 BY 233-400 BY 233-600 200 400 600 8 150 DO 220 AB A 8 A / Tcase = 100° C Tj = 150°C

diode DSDI 12

Contextual Info: DSDI 60 IF AVM = 63 A VR R =M 1 4 00- 1 8 00 V trr = 4 0 ns Super Fast Recov ery Diode VRSM VRRM Type A C TO - 2 4 7 A D V V 1 4 00 1 4 00 DSDI 60- 1 4 A 1 600 1 600 DSDI 60- 1 6A 1 8 00 1 8 00 DSDI 60- 1 8 A C A C A = Anode, C = C athode Symbol IFRM S IFA VM

Contextual Info: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S

DSE112-06A

Abstract: dse112 30-1OA 805A 140-12DA DSEI 30-06A DSE112-06 2X30-06C FOR DSEI 2X61-04C dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED and FRED Modules lFAV = 8 - 305 A Typa VJM DSEI8-06A • DSEI 8-05A • DSEI 8-04A ► DSEI 12-12A DSEI 12-10A lm @ -dl/dt F ^ 'F Van ‘ r, 45'C max. typ. typ. 10 ms Tvjm = 150-C TVJ=250C TVJ = 100CC A A/^a A ns •C

Contextual Info: • m m Chatsworth, CA m Micmsemi P rog ress Po^vered b y T echnology 9261 O w ensm ou th A ve. C hatsw orth, C a 91311 Phone: 8 1 8 7 0 1 -4 9 3 3 Fax: ( 8 1 8 )7 0 1 - 4 9 3 9 Features Low C urrent L e a k a g e 500mW 100 Volt Silicon Epitaxial Diode

.2TY

Abstract: gc224 1N239
Contextual Info: t r i SGS-THOMSON IRF840/FI IRF841/FI ¡L[iOT 2 iQ(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R d S(o ii ) Id IR F 8 4 0 IR F 8 4 0 F I 500 V 500 V 0 .8 5 a 0 .8 5 Q 8 A 4 .5 A IR F841 IR F 8 4 1 F I 450 V 450 V 0 .8 5 a 0 .8 5 L i 8 A 4 .5 A

TF-853

Abstract: TF-874 TF-823 tf886 TF-886 TF-899 TF823 tf844 TF-835 814a
Contextual Info: NARROWBAND SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TF-8/TN-8-A r- GENERAL INFORMATION: Series TF-8 and TN-8-A switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent elec­

ADC0808 PIN DIAGRAM

Contextual Info: May 1997 ML2258 µP Compatible 8-Bit A/D Converter with 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2258 combines an 8-bit A/D converter, 8-channel analog multiplexer, and a microprocessor compatible 8-bit parallel interface and control logic in a single monolithic

ADC0809CCN

Abstract: ADC0808 ML2258BIP ML2258BIQ ML2258CIP ML2258CIQ ADC0809 ML2258
Contextual Info: May 1997 ML2258 µP Compatible 8-Bit A/D Converter with 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2258 combines an 8-bit A/D converter, 8-channel analog multiplexer, and a microprocessor compatible 8-bit parallel interface and control logic in a single monolithic

DSP 8-12A

Abstract: Phase-leg Rectifier Diode 8-12AS X17A 812A1
Contextual Info: DSP 8 VRRM = 800/1200 V IF RMS = 2 x 17 A IF(AV)M = 2 x 11 A Phase-leg Rectifier Diode VRSM V 900 1300 VRRM V TO-220 AB 800 1200 DSP 8-08A DSP 8-12A 1 DSP 8-08AS DSP 8-12AS Test Conditions IFRMS IF(AV)M TVJ = TVJM Tcase = 100°C; 180° sine IFSM TVJ = 45°C;

Contextual Info: DSP 8 VRRM = 800/1200 V IF RMS = 2 x 17 A IF(AV)M = 2 x 11 A Phase-leg Rectifier Diode V 900 1300 VRRM V TO-220 AB 800 1200 DSP 8-08A DSP 8-12A 1 DSP 8-08AS DSP 8-12AS Test Conditions IFRMS IF(AV)M TVJ = TVJM Tcase = 100°C; 180° sine IFSM TVJ = 45°C; 2

Contextual Info: DSP 8 VRRM = 800/1200 V IF RMS = 2 x 17 A IF(AV)M = 2 x 11 A Phase-leg Rectifier Diode VRSM V 900 1300 VRRM V TO-220 AB 800 1200 DSP 8-08A DSP 8-12A 1 DSP 8-08AS DSP 8-12AS Test Conditions IFRMS IF(AV)M TVJ = TVJM Tcase = 100°C; 180° sine IFSM TVJ = 45°C;