8 PIN 3860 IC CIRCUITS Search Results

dic a700

Abstract: dic a700 circuit 8 pin 3860 ic circuits LTC3860 LTC4449
Contextual Info: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs n Constant Frequency Voltage Mode Control with Accurate Current Sharing n ±0.75% 0.6V Voltage Reference

dic a700

Abstract: LTC3680 8 pin 3860 ic circuits emerson track sheet free dic a700 circuit sanyo oscon label LTC3860 LTC4449 LTC3775 5.1 channel master volume circuit with remote control
Contextual Info: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES n n n n n n n n n n n n n n n Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs Constant Frequency Voltage Mode Control with Accurate Current Sharing

Contextual Info: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES n n n n n n n n n n n n n n n Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs Constant Frequency Voltage Mode Control with Accurate Current Sharing

dic a700 circuit

Abstract: dic a700 LTC3680 D12S36A SMT30PB LTC3860 LTC4449 transistor R1A 37 pwm 555 timer mosfet driver ltc44
Contextual Info: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES n n n n n n n n n n n n n n n Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs Constant Frequency Voltage Mode Control with Accurate Current Sharing

Contextual Info: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing Description Features Constant Frequency Voltage Mode Control with Accurate Current Sharing n ±0.75% 0.6V Voltage Reference n Differential Remote Output Voltage Sense Amplifier

Contextual Info: BD237 NPN , BD238 (PNP) Preferred Devices Plastic Medium Power Silicon NPN Transistor Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain − • • http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc

Contextual Info: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS

MJ21294

Abstract: MJ21294G
Contextual Info: MJ21294 NPN Silicon Power Transistor With superior safe operating area performance, this power transistor is ideal for high temperature linear control circuits. Features • Exceptional Safe Operating Area • Dual Die Device with Standard 40 mil pins • Pb−Free Package is Available*

Contextual Info: MJE371G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http://onsemi.com Features

BD809

Abstract: BD810
Contextual Info: ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Contextual Info: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS

MJ423

Abstract: Y300500
Contextual Info: ON Semiconductort MJ423 High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS • High Voltage — • • VCEX = 400 Vdc

ADC 808

Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S
Contextual Info: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS

Contextual Info: 2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters.

BD237G

Abstract: BD234 BD234G BD236 BD237 BD238 BD238G
Contextual Info: BD237 NPN , BD234 (PNP), BD238 (PNP) Preferred Devices Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features 2.0 AMPERES POWER TRANSISTORS 25 WATTS

BD237

Contextual Info: BD237 NPN , BD234 (PNP), BD238 (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.125 in

MJE5740

Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

2N5194

Abstract: 2N5195 2N5191 2N5192 2N5193
Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP

MJE5190

Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
Contextual Info: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN

2N5631

Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Contextual Info: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com

Contextual Info: 2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction

Contextual Info: 2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features http://onsemi.com • Complement to NPN 2N5191, 2N5192 • These Devices are Pb−Free and are RoHS Compliant*

2N5192G

Contextual Info: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS

Contextual Info: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS