rectifier diode 20 amp 800 volt
Abstract: 80 Amp current 100 volt diode 50 Amp 300 volt diode alternator diode 65 amp alternator diode RZ3524C rectifier diode pressfit zener alternator rectifier 400 amp 20 volt rectifier RZ2524C
Text: RZ2524C/A - 25 Amp RZ3524C/A - 35 Amp RZ5024C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection
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RZ2524C/A
RZ3524C/A
RZ5024C/A
SCD0725-3
rectifier diode 20 amp 800 volt
80 Amp current 100 volt diode
50 Amp 300 volt diode
alternator diode 65 amp
alternator diode
RZ3524C
rectifier diode pressfit
zener alternator rectifier
400 amp 20 volt rectifier
RZ2524C
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rectifier diode 20 amp 800 volt
Abstract: 3528 MR2528 MRL2528 MR3528 MR5028 MRL3528 50 Amp 300 volt diode MR502-8
Text: MR2528/MRL2528 - 25 Amp MR3528/MRL3528 - 35 Amp MR5028/MRL5028 - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Coloured ring denotes cathode Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection
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MR2528/MRL2528
MR3528/MRL3528
MR5028/MRL5028
MR2528/3528/5028
MRL2528/3528/5028
SCD0696-5
rectifier diode 20 amp 800 volt
3528
MR2528
MRL2528
MR3528
MR5028
MRL3528
50 Amp 300 volt diode
MR502-8
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Schottky barrier diode 70v 1 amp
Abstract: No abstract text available
Text: WILLAS FM120-M+ DAP202UTHRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES:
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OT-323
OD-123+
FM120-M+
DAP202U
FM1200-M+
OD-123H
OT-323
FM120-MH
FM130-MH
FM140-MH
Schottky barrier diode 70v 1 amp
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process
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OT-23
OD-123+
FM120-M+
BAS40x
FM1200-M+
OT-23
OD-123H
FM120-MH
FM130-MH
FM140-MH
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marking CODE 56
Abstract: marking code pr
Text: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers
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OT-363
OD-123+
FM120-M+
BAT54xxWTHRU
FM1200-M+
OT-363
OD-123H
FM120-MH
FM130-MH
FM140-MH
marking CODE 56
marking code pr
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SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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SOD323 diode schottky code marking 37
Abstract: MIL-STD-19500 FM160MH sod123h
Text: WILLAS FM120-M+ BAS70WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OD-323
OD-123+
FM120-M+
BAS70WS
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
SOD323 diode schottky code marking 37
MIL-STD-19500
FM160MH
sod123h
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alternator rectifier
Abstract: 100 Amp current 800 volt diode SCD0861-1 RZ2538A RZ2538C RZ3538A RZ3538C RZ5038A RZ5038C
Text: RZ2538C/A - 25 Amp RZ3538C/A - 35 Amp RZ5038C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection
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RZ2538C/A
RZ3538C/A
RZ5038C/A
31Volt
SCD0861-1
alternator rectifier
100 Amp current 800 volt diode
SCD0861-1
RZ2538A
RZ2538C
RZ3538A
RZ3538C
RZ5038A
RZ5038C
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SOD323 diode schottky code marking 37
Abstract: willas sod123h
Text: WILLAS FM120-M+ BAS40WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better BARRIER
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OD-323
OD-123+
FM120-M+
BAS40WS
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
SOD323 diode schottky code marking 37
willas
sod123h
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BAT4xWSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features FEATURES • Batch process design, excellent power dissipation offers
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OD-323
OD-123+
FM120-M+
FM1200-M+
OD-123H
OD-323
FM120-MH
FM130-MH
FM140-MH
FM150-MH
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marking B7 sod123
Abstract: B7 sod123 sod-123 marking code B7
Text: WILLAS FM120-M+ BAT54xW THRU FM1200-M+ SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features SWITCHING DIODE design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance.
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OT-323
OD-123+
FM120-M+
BAT54xW
FM1200-M+
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
marking B7 sod123
B7 sod123
sod-123 marking code B7
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schottky diode marking A7 SOD
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OT-323
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
schottky diode marking A7 SOD
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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CMSD2004S
Abstract: No abstract text available
Text: WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse
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FM120-M+
MMBD2004SW
OT-323
FM1200-M+
OD-123+
CMSD2004S
FM120-MH
FM130-MH
FM140-MH
FM150-MH
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MYXDS1200-10ABS
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements
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MYXDS1200-10ABS
O-257
MYXDS1200-10ABS
silicon carbide
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SB065
Abstract: 125OC
Text: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB060C020-3-W-Ag
125OC
SCD0979-1
SB065
125OC
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C015-0
125OC
SCD0966-1
15 amp 1000 Volt Diode
125OC
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100 Amp current 1300 volt diode
Abstract: 125OC
Text: SB051C015-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB051C015-1-W-Ag
125OC
SCD0964-1
100 Amp current 1300 volt diode
125OC
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C015-1-W-Ag
125OC
SCD0963-1
15 amp 1000 Volt Diode
125OC
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125OC
Abstract: No abstract text available
Text: SB065C015-3-W-Ag Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB065C015-3-W-Ag
125OC
SCD0969-1
125OC
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C025-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C025-1-W-Ag
125OC
SCD0965-1
15 amp 1000 Volt Diode
125OC
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diode schottky 1000V 10a
Abstract: 125OC
Text: SB039C040-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C040-1-W-Ag
125OC
SCD0967-1
diode schottky 1000V 10a
125OC
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125OC
Abstract: No abstract text available
Text: SB039C040-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C040-0
125OC
SCD0968-1
125OC
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