80 DIODE Search Results

DAN235U equivalent

Abstract: RLS73 equivalent DAP236U equivalent 1SS376 T146 UDZS te Series Diode T148 DAP222 DAP202U DAN202U
Contextual Info: Diode Product Solutions www.rohm.co.uk Surface Mounting Type General Purpose Diodes/Arrays Application Features Absolute maximum ratings Ta=25oC Part No. VR (V) IO (mA) 80 80 80 80 80 80 80 80 80 20 20 80 20 80 80 80 80 80 80 80 80 80 80 35 250 220 100 100

OA115

Abstract: da226u DA106U
Contextual Info: Diode Arrays Vr V lo (mA) 80 100 trr Max. (ns) 4 80 100 4 80 80 4 4 - 80 80 80 100 100 100 100 100 4 4 4 - 80 100 4 - 80 80 100 - 25 4 4 SST SM T UMT EM 3 - FM T Fig .6 Fig .2 UMN1 FMP1 UMP1 80 25 4 Fig.14 25 4 - UM5 80 FMT Fig .7 80 25 4 UM5 M N10 4 4 MP11

d4sb60l

Abstract: D5SBA20
Contextual Info: 5S S IP Bridge Diodes Absolute Maximum Ratings Type No. * * * * * * * * S1VB20 60 80 S1VBA20 60 D2SBA20 60 D2SB20 60 80 60L D3SBA20 60 D3SB20 60 80 D4SB60L 80 D5SBA20 60 D5SB20 60 80 D0SB60L 80 D10XB20 60 20H 60H 80 D15XB20 60 20H 60H 80 D20XB20 60 80 D2BXB20

DAN801

Contextual Info: Diode Arrays Application Vr V Vrm (V) lo (mA) trr Max. (ns) Ct Max. (pF) Isurge 60Hz 1“* (A) DAN201 80 80 100 4 3.5 - FTR Fig.1 DAN209 80 80 100 4 3.5 - TO-92 Fig.1 DAN209S 80 80 100 4 3.5 - SPT Fig.1 DAN215 80 80 100 4 3.5 - FTL Fig.1 DAN401 80 80 25

PSWD 80

Abstract: E148688 STR53
Contextual Info: Diode Modules PSWD 80 PSYD 80 IFRMS VRRM = 3x 50 A = 800 - 1800 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 1900 V RRM V DRM 800 1200 1400 1600 1800 Type PSWD 80/08 PSWD 80/12 PSWD 80/14 PSWD 80/16 PSWD 80/18 Type PSYD 80/08 PSYD 80/12 PSYD 80/14

S15VD 10

Contextual Info: RECTIFIER DIODES Low-frequency rectifying 3 Phase Bridge Diode Modules SVTA SVT Absolute Maximum Ratings VRM IO IFSM Type No. [V] S10VT60 80 S10VTA60 80 S15VT60 80 S15VTA60 80 S20VT60 80 S20VTA60 80 S30VT60 80 S30VTA60 80 160 D30VTA160 600 800 600 800 600

DA228K

Contextual Info: Diode Arrays Application Part No. DA227 DAN202C DAN202K - SST SMT - UMT - EM3 SST SMT Fig.1 UMT Fig .6 EM3 Fig .6 Fig .2 4 4 100 4 80 100 4 DAP202U 80 100 4 DAP222 FMN1 80 80 100 4 25 UMN1 FMP1 80 25 25 4 4 UMP1 80 MN10 M N 11 80 80 M P11 80 UMP11 80 UMN11

PSVD 80

Contextual Info: Diode Modules PSVD 80 PSXD 80 IFRMS VRRM = 3x 50 A = 800 - 1800 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 1900 V RRM V DRM 800 1200 1400 1600 1800 Type PSVD 80/08 PSVD 80/12 PSVD 80/14 PSVD 80/16 PSVD 80/18 Type PSXD 80/08 PSXD 80/12 PSXD 80/14

DAN801

Abstract: DAP803
Contextual Info: ito m i Diode Arrays Application Vr V Vrm (V) lo (mA) trr Max. (ns) Ct Max. (pF) Isurge 60Hz 1* (A) DAN201 80 80 100 4 3.5 _ FTR Fig.1 DAN209 80 80 100 4 3.5 - TO-92 Fig.1 DAN209S 80 80 100 4 3.5 - SPT Fig.1 DAN215 80 80 100 4 3.5 - FTL Fig.1 DAN401 80

D15VD

Abstract: S15VTA60
Contextual Info: Rectifier Diodes Low frequency rectifying A bsolute M axim um Ratings lo V rm Type No. [V ] S 10VT60 600 80 800 S10VTA60 600 80 800 S 15VT60 600 80 800 S15VTA60 600 80 800 S 20VT60 600 80 800 600 o 800 CO S20VTA60 S 30VT60 600 80 800 S30VTA60 600 80 800 S30VTA160

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

2SK60

Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units 1200 ± 20 58 / 40 116 / 80 V V A A IGBT VCES VGES IC ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Diodes Th = 25/80 °C IF = –IC IFM = –ICM tp < 1 ms; Th = 25/80 °C Tj Tstg Tsol Visol Inverse Diode

PSKH 80

Abstract: PSKH80-08
Contextual Info: ECO-PACTM 2 Thyristor/Diode Modules ITAVM VRRM PSKH 80 Preliminary Data Sheet VRSM VRRM Type VDSM VDRM V (V) 700 600 PSKH 80/06 900 800 PSKH 80/08 1300 1200 PSKH 80/12 VX-18 GI-10 AC-1 E-3 Symbol Test Conditions ITAVM ITSM TC = 85 °C, 180° sine 80 A TVJ = 45 °C

Contextual Info: 1.5K W 85-264VAC ETJ-SX SERIES Model ETJ02SX ETJ3.3SX ETJ05SX ETJ12SX ETJ24SX ETJ28SX ETJ48SX Output 2V 3.3V 5V 12V 24V 28V 48V 300A 300A 300A 125A 62A 53A 31A Efficiency 80% 80% 80% 80% 80% 80% 80% DESCRIPTION ELECTRICAL SPECIFICATIONS The Single Output ET series is our New Modular compact

15VD40

Abstract: 15VTA60
Contextual Info: Rectifier Diodes Low frequency rectifying 3 Phase Bridge Diode Modules A b solute M axim um R atings E lectrical C haracteristics In Vf Type No. V rm lo [V ] [A ] S10VT60 600 80 800 S 10VTA60 600 80 800 S 15VT60 600 80 800 S 15VTA60 600 80 800 S 20VT60 600

8016no1

Abstract: 555 pwm
Contextual Info: VUO 80 IdAVM = 82 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 80-08NO1 VUO 80-12NO1 VUO 80-14NO1 VUO 80-16NO1 VUO 80-18NO1 Symbol Test Conditions IdAV IdAVM TK = 90°C, module module IFSM

Q62901-B65

Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology

DIODE da218s

Abstract: DA218S DA218 DA210S DA216 DA203 da210 DAN213 DAN801 da203 b
Contextual Info: RDNfn Diode Arrays Application Part No. High-speed Switching 2 Vps connected in series Rectifying Vr V trr Max. (ns) lo CmA) V rm (V) Isurge 60Hz 1°= (A) Ct Max. (pF) Package Circuits Fig.1 DAN201 80 80 100 4 3.5 - FTR DAN209 80 80 100 4 3.5 - TO-92 Fig.1

80-14NO1

Contextual Info: VUO 80 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 VUO 80-08NO1 VUO 80-12NO1 VUO 80-14NO1 VUO 80-16NO1 VUO 80-18NO1 Conditions IdAV IdAVM TC = 90°C, module module IFSM TVJ = 45°C; VR = 0 I2t 1/2 Type

555 dc dc inverter

Abstract: E72873
Contextual Info: VUO 80 IdAVM = 82 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 80-08NO1 VUO 80-12NO1 VUO 80-14NO1 VUO 80-16NO1 VUO 80-18NO1 Symbol Test Conditions IdAV IdAVM TK = 90°C, module module IFSM

D20VT80

Abstract: D20VT60
Contextual Info: R e c t if i e r D io d e s 3 Phase Bridge Diode M odules Electrical Characteristics Absolute Maximum Ratings V rm Parts No. lo Co nd itio ns Ifsm Tj T stg max Tc [V] [A ] S10VT60 600 80 800 S10VTA60 600 80 800 S15VT60 600 80 800 S15VTA60 600 80 800 ☆ D20VT60

Contextual Info: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms

Contextual Info: VUO 80 IdAV = 82 A VRRM = 800-1800 V Three Phase Rectiier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 1/2 Type 1 VUO 80-08NO1 VUO 80-12NO1 VUO 80-14NO1 VUO 80-16NO1 VUO 80-18NO1 Symbol Conditions IdAV IdAVM TC = 90°C, module

80-16N01

Abstract: VUO 80-16N01 80-08N01 80-14N01 F229
Contextual Info: n ix Y S VUO 80 Three Phase Rectifier Bridge v RSM V RRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 10 o - 80-08N01 80-12N01 80-14N01 80-16N01 80-18N01 Symbol Test C onditions ^dAVM T k = 90°C, module module ^FSM l2t V RRM Type VUO VUO VUO VUO VUO