800A DC DIODE Search Results

AC INRUSH CURRENT 1000A LIMITER

Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
Contextual Info: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)

littelfuse l50s

Abstract: l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125
Contextual Info: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)

L15S

Abstract: L25S L50S L60S L70S l13s L15S1000
Contextual Info: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)

transistor VCE 1000V

Abstract: E80276 QM800HA-2HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB • • • • • IC Collector current . 800A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

DIODE 24B

Abstract: E80276 QM800HA-24B
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B • • • • • IC Collector current . 800A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B lc Collector current. 800A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized

phmb800b12

Contextual Info: IGBT MODULE PHMB800B12 Single 800A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range

PHMB800A6

Contextual Info: IGBT MODULE PHMB800A6 Single 800A 600V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Symbol Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range

Contextual Info: 70-W424NIA800SH-M800F target datasheet 2xflow NPC 4w 2400V/800A Features 2xflow SCREW 4w 12mm housing ● 2400V NPC-topology ● Low inductive ● High power screw interface ● Integrated DC-snubber capacitors ● assymetrical inductance technology Target Applications

Mitsubishi transistor

Contextual Info: MITSUBISHI TRANSÌSTOR MODULES ! QM800HA-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE ! QM800HA-2HB • lc Collector cu rre n t. 800A • V cex Collector-em itter • hFE DC current g am . 750 . v o lta g e 1000V

DIODE 24B

Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750

PLESSEY CLA

Contextual Info: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

thyristor 800A

Abstract: wenzhou MTC600
Contextual Info: Thyristor/Thyristor Module MTC600A/800A Thyristor/Diode Module MFC600A/800A FEATURES • High voltage • Industrial standard package • Low thermal resistance • Designed and qualified for industrial level • Excellent thermal performances obtained by the usage of

eupec igbt

Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

semikron skiip 33

Contextual Info: SKiiP 802 GH 061 - 2*259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM

semikron skiip 400 gb

Abstract: SKiiP 802 GB 061 POWER SUPPLY WITH IGBT semikron skiip 20
Contextual Info: SKiiP 802 GB 061 - 259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

diode 1700v

Abstract: FZ800R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

800A DC diode

Abstract: MBL800E33D igbt 800A
Contextual Info: Spec.No.IGBT-SP-03009 R1 IGBT MODULE MBL800E33D Preliminary SPEC. Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70℃,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

FZ800R17KF6CB2

Abstract: KF6C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

SKiiP 802 GB 061

Contextual Info: SKiiP 802 GB 061 - 259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

MBN800E33D

Contextual Info: Spec.No.IGBT-SP-03012 R1 IGBT MODULE MBN800E33D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

ic 555N

Abstract: MBL800D33B 555N hitachi igbt
Contextual Info: IGBT MODULE MBL800D33B TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).

semikron skiip 33

Contextual Info: SKiiP 802 GH 061 - 2*259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM