MG800FXF1ZMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
|
|
MG800FXF1JMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
|
|
R5F109ABJSP#X0
|
|
Renesas Electronics Corporation
|
Microcontrollers with Low Consumption Current for Automotive Applications |
|
|
R5F109ABJSP#X0G
|
|
Renesas Electronics Corporation
|
Microcontrollers with Low Consumption Current for Automotive Applications |
|
|
R5F109ABJSP#H0
|
|
Renesas Electronics Corporation
|
Microcontrollers with Low Consumption Current for Automotive Applications |
|
|