triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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Abstract: No abstract text available
Text: iML8684 Three Terminal Current Controller General Description Features The iML8684 is a Three Terminal Current Controller TTCC for regulating the current flowing through an LED string. The application of the iML8684 is configured in parallel with an LED string. The iML8684 can work
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iML8684
iML8684
8684DOC
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RT9701
Abstract: RT9701CB RT9701CBL
Text: RT9701 100mΩ Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-channel NMOSFET that is free
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RT9701
RT9701
OT-25)
DS9701-05
RT9701CB
RT9701CBL
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RT9701CB
Abstract: 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 RT9701 RT9701CBL C35U E219878
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch z for self-powered and bus-powered Universal Series z 100mΩ Ω Typ. High-Side NMOSFET SOT- 25 Guaranteed 1.1A Continuous Current
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RT9701
OT-25)
DS9701-05
RT9701CB
1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25
RT9701
RT9701CBL
C35U
E219878
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triac 800V 1A
Abstract: No abstract text available
Text: iML8683 Three Terminal Current Controller General Description Features The iML8683 is a Three Terminal Current Controller TTCC for regulating the current flowing through an LED string. The application of the iML8683 is configured in parallel with an LED string. The iML8683 can work
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iML8683
iML8683
8683DOC
O-252.
triac 800V 1A
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MOS-Controlled Thyristor
Abstract: SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type
Text: SMCTAA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 This Voltage Controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five
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SMCTAA65N14A10
O-247
O-247
260oC
04242009-NB-0012
MOS-Controlled Thyristor
SMCTAA65N14A10
Solidtron
MOS Controlled Thyristor
MOS-Controlled Thyristor N-type
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MOS-Controlled Thyristor
Abstract: SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247
Text: SMCTAA32N14A10 Advanced Pulse Power Device 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 12/19/07 Description Package Size - 4 This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five
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SMCTAA32N14A10
O-247
O-247
04242009-NB-0010
MOS-Controlled Thyristor
SMCTAA32N14A10
mos 1200v to-247
800v nmos
MOS Controlled Thyristor
MOS-Controlled Thyristor N-type
103-290
Solidtron
RG-47
MOS-Controlled Thyristor to-247
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AA32N14A10
Abstract: MOS-Controlled Thyristor Solidtron aa32n14 RG47 SMCTAA32N14A10 RG-47 SCR 3KA 02uF edis
Text: SMCT AA32N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with
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AA32N14A10
O-247
O-247
FO-247
AA32N14A10
MOS-Controlled Thyristor
Solidtron
aa32n14
RG47
SMCTAA32N14A10
RG-47
SCR 3KA
02uF
edis
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TA32N14A10
Abstract: MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron
Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area
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TA32N14A10
63pb/37sn
260oC
TA32N14A10
MOS-Controlled Thyristor
MCT thyristor
63SN 37PB SOLDER
TA32N14
ta32n14a
KA NMOS
1400V MCT
302oC
Solidtron
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AA65N14A10
Abstract: aa65n14 Solidtron SCR 3KA KA NMOS RG-47 MOS-Controlled Thyristor
Text: SMCT AA65N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with
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AA65N14A10
O-247
O-247
FeaO-247
AA65N14A10
aa65n14
Solidtron
SCR 3KA
KA NMOS
RG-47
MOS-Controlled Thyristor
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SMCTTA32N14A10
Abstract: MOS-Controlled Thyristor MCT thyristor MOS Controlled Thyristor
Text: SMCTTA32N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com N-MOS VCS, ThinPakTM Data Sheet Rev 2 - 07/10/2008 Description Package This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a
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SMCTTA32N14A10
260oC
SMCTTA32N14A
04242009-NB-0007
SMCTTA32N14A10
MOS-Controlled Thyristor
MCT thyristor
MOS Controlled Thyristor
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MOS-Controlled Thyristor
Abstract: SMCTTA65N14A10 MCT thyristor SMCTAA65N14A10 63SN 37PB SOLDER SMCTTA65N
Text: SMCTTA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, ThinPak Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 SolidtronTM This voltage controlled (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a
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SMCTTA65N14A10
63pb/37sn
260oC
SMCTAA65N14A10
04242009-NB-0011
MOS-Controlled Thyristor
SMCTTA65N14A10
MCT thyristor
SMCTAA65N14A10
63SN 37PB SOLDER
SMCTTA65N
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TA65N14A10
Abstract: 1E21 MCT thyristor SMCTTA65N14A10 RG-47
Text: SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area
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TA65N14A10
63pb/37sn
260oC
TA65N14A10
1E21
MCT thyristor
SMCTTA65N14A10
RG-47
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TA32N14A10
Abstract: SCR 3KA 37sn TA32N14 MOS Controlled Thyristor RG-47
Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area
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TA32N14A10
63pb/37sn
260oC
TA32N14A10
SCR 3KA
37sn
TA32N14
MOS Controlled Thyristor
RG-47
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Diode marking RL30A
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches Features General Description The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-25)
DS9701-08
Diode marking RL30A
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Untitled
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
OT-23-5
DS9701-14
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RT9701
Abstract: RT9701CB RT9701CBL
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
OT-23-5
DS9701-13
RT9701CB
RT9701CBL
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Untitled
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
OT-23-5
DS9701-10
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Untitled
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
OT-23-5
DS9701-12T00
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Thermal Shut Down Functioned MOSFET
Abstract: RT9701 RT9701CB RT9701CBL FERRITE BEAD 100M E219878
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic body diode
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RT9701
RT9701
OT-25)
DS9701-07
Thermal Shut Down Functioned MOSFET
RT9701CB
RT9701CBL
FERRITE BEAD 100M
E219878
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batterycharger
Abstract: RT9701 PORT marking sot-23-5
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
DS9701-16
batterycharger
PORT marking sot-23-5
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PORT marking sot-23-5
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
DS9701-16
PORT marking sot-23-5
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RT9701
Abstract: No abstract text available
Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic
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RT9701
RT9701
OT-23-5)
DS9701-15
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800v nmos
Abstract: No abstract text available
Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)
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2SK1365
800v nmos
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