804 15A DIODE Search Results

CHN 804 diode

Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
Contextual Info: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced

semikron sk 50 et 12

Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
Contextual Info: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen

Contextual Info: MA2710D10000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

AN-994

Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

d 1830

Contextual Info: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 94382 IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

irf 1830

Abstract: 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns
Contextual Info: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

irf 1830

Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
Contextual Info: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: C ir s A v u iu w v ^ Corporation ▼ SIGNAL PROCESSING EXCELLENCE SP690T/S/R, SP802T/S/R. SP804T/S/R, and SP805T/S/R 3.0V/3.3V Microprocessor Supervisory Circuits • Precision Voltage Monitor for Power-Fail or Low-Battery Warning ■ R ESET and R ESET Outputs

itw 104 600v

Abstract: MIG25Q90
Contextual Info: TO SH IBA TEN TATIVE MIG25Q904H T O S H IB A IN T E G R A T E D IG B T M O D U L E SILIC O N N C H A N N E L IG B T MIG25Q904H H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • In teg ra te s Inverter, Converter and B rake

p802t

Contextual Info: C irs A v v i f ^c Corporation sw A SIGNAL PROCESSING EXCELLENCE SP690T/S/R, SP802T/S/R. SP804T/S/R, and SP805T/S/R 3.0V/3.3V Microprocessor Supervisory Circuits • Precision Voltage Monitor for Power-Fail or Low-Battery Warning ■ RESET and RESET Outputs

CMP12

Abstract: CMP120N03LD06
Contextual Info: CMP120N03LD06 N-CHANNEL TRENCH MOSFET APPLICATION FEATURES ! Buck Converter High Side Switch ! Low ON Resistance ! Other Applications ! Low Gate Charge ! Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID ! Inductive Switching Curves 30V 5.3mΩ 115A !

Contextual Info: CMT120N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 5.3mΩ 115A Improved UIS Ruggedness

116765-000

Abstract: 1162930000
Contextual Info: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is

h05 diode

Contextual Info: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is

ge 130l10

Abstract: GE capacitors 150l20 GE 47Z7 15a h3 fuse sf thermistor 420l40 GE 150L10 GE 100z15 GE 130L20B DIN 13715 2011 576-V100ZA15P
Contextual Info: CIRCUIT PROTECTION Varistors AVX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546, 547 Epcos. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .548, 549

pcf 85741

Abstract: 85741 PCF 799 Apex Microtechnology PZT Transducer 1N4148 AD707 PA03 PB50 PB58
Contextual Info: ATE APPLICATIONS • High Voltage PPS • High Current PPS • AC Power Supplies • Pin Drivers • Waveform Generators • Active Loads There are an extensive array of applications for high power, high voltage, and/or high speed linear amplifiers in almost any type of automatic test equipment. Some of the most

LR kbpc3510

Abstract: kbp 3510 kbu808 Rectifier s01cc KBU80B C3502-AKBPC3508 pc 2501 kbp02 BPC802 KBU diode bridge
Contextual Info: < § Silicon Bridge Rectifiers 1 Amp Silicon Bridge Rectifiers D F 005-D F10 Series. S in g le -p h a se , fu ll-w a v e b rid ge re ctifiers in 4 -p in D u a l-in -L in e pa ckages. 50 V to 10 0 0 V VRRM . 1A (l0 ), 3 0 A p e a k o n e -h a lf c y c le surge. E poxy p a c k a g e has U L 9 4 V -0 flam e re ta rd a n t rating. Lead s o ld e ra b le per M IL -S T D