809 NPN Search Results

equivalent ic to PAL 007 E MOSFET

Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
Contextual Info: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358

Contextual Info: NE III EN6LAND SEMICONDUCTOR S'ìE ]> bSt.M R'ìa OOOOOM' ì NPN TO-66 077 H N ES lc M A X = 1 -7 A V ce<xsus) = 3 5 -4 0 0 V fi = .75-50 MHz Case 809 T '3 S ' O / le {MAX) W 2N6049 2N6211 2N6212 2N6213 55 250h 300* 400h 4 1 5 5 25-100 5/4 40-200® 5/10

mcd206

Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Contextual Info: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead

Contextual Info: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.

TRIMMER capacitor 160 pF

Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
Contextual Info: bSE » Q 711002b QOtiBDlM 5ÖS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in m obile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

SOT172D

Abstract: RF POWER TRANSISTOR NPN BLV90 MDA393
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor BLV90 DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

transistor d 1991 ar

Contextual Info: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

Contextual Info: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

transistor tt 2222

Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Contextual Info: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

1117 S Transistor

Abstract: sot122f
Contextual Info: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

RF POWER TRANSISTOR NPN vhf

Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
Contextual Info: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

Contextual Info: PHILIPS bSE INTERNATIONAL T> 7110fl2b □Db27S&#39;ì 12S m BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

Contextual Info: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

BLU60/28

Contextual Info: L.5E D PHILIPS INTERNATIONAL • 711002b OObSTST 125 l B LU 6 0 /2 8 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

smd transistor xf

Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
Contextual Info: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

smd transistor e7

Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
Contextual Info: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see

2N2222A TO-92

Abstract: 2n2222 to92 2n2222 to-92 transistor 2n2222a data sheet to-92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2907 NPN Transistor
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) NPN COMPL. PAGE 2N2905

BLX95

Abstract: TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer
Contextual Info: b5E D 711DÖ2b 0Db353fl 523 « P H I N BLX95 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

TRIMMER capacitor 5-60 pF

Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
Contextual Info: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".

transistor tt 2222

Abstract: smd 809 x transistor transistor SMD S33
Contextual Info: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures