80N30BD1 Search Results
80N30BD1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
sot 227b diode fastContextual Info: Advanced Technical Information IGBT with Diode VCES = 300 V IC25 = 120 A VCE sat = 2.4 V IXGN 80N30BD1 C G E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 A VGES Continuous ±20 V VGEM Transient |
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80N30BD1 OT-227B, sot 227b diode fast |