81-1-S IQ Search Results

N82S181N

Abstract: CE12
Contextual Info: Philips Components-Signetics Document No. 8 5 3 -0 1 3 0 ECN No. 86487 Date of Issue N ove m b e r 11, 1986 S ta tu s P ro du ct S p ecification 8 2 S 1 8 1 / 8 2 S 1 8 1 A 8K-bit TTL bipolar PROM M em ory Products DESCRIPTION FEATURES The 8 2 S 1 81 and 8 2 S 1 8 1 A are field

Contextual Info: samTec Bdflfl9Efi3H2l ÄBStiHMÄk S Ì «GKUB&M& ^wmbm» . PTE-136-01- G - C ST E - 1 5 0 - 0 1 - G - O V F T E -1 2 0 -0 1 -G - D V S »* ' ill Sill 81 Materials: m Insulator Material: Low prcfite Choice of post heights \ M a ie s - ft.T B r tw y . 087“ '

18261

Abstract: IRFF130 IRFF131 IRFF132 IRFF133
Contextual Info: 3 |t | 3 û 75[]ô 1 0 0 1 0 2 5 e! b ~ 38 750 81 G E S O L I D S T A TE 0 1 E 18259 Standard Power M O S F E T s _ IRFF130, IRFF131, IRFF132, IRFF133 D File N um ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

SDA-2083

Abstract: c2314 IR2248 LA 7814 T2333 2561A c2271 ir434 d2251 8c548
Contextual Info: * ]' —o o I" o T 81 4 8 C 32 7/40 Ì o i—» .Q cp ! D811 C SAT42 ¡L ^ . ^ s s s s ss s s s s f^ I ~ -I.! » SSSSS . SSSSSS’ -i W i W E # ^ SSjfcSSSSSSSSSSSSSS VSSSSSSSMrVJ— 1 J 8AT4-2 \ ; ffi? 4 |± Î|£ I L S R517Ö U S *6 5170 *882

2n3223

Abstract: 2N3543 2N3222 2N2632 2k4075
Contextual Info: 81 3 4 6 9 3 S E M I C O A 40 D E | fll34bT3 □ □ □ D I E S 1 1 ^ 2 7 - 0 / NPN SILICON POWER TRANSISTORS Electrical Characteristics @ 25°C Maximum Ratings Device Type No. NPN Dissipation @ 25°C Case Watts (Cont.) Amps VCB Volts VCE Volts 2N3595 2N3596

BYT 1000

Abstract: t03h
Contextual Info: 1 5^0 D I 7TETE37 0002101 3 S G S-THOMSON 59C 021 81 Q THOMSON-CSF 0 7 ^ 0 3 “/ 7 B Y T 6 5 .6 5 B DIVISION SEMICONDUCTEURS DISCRETS SUPERSW ITCH 6 0 0 _^1 0 0 0 ,CR HIGH VOLTAGE FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES HAUTE TENSION HIGH VOLTAGE SUPERSWITCH

74LS268

Abstract: 74468 L1327 74LS367 81LS98 A4016 IC-JJ
Contextual Info: — 238 — 7 4 4 6 8 8 1 LS98 VCC 5 2 8A Octal 3-State Bus BY 7 A 7Y 6A 6Y 5A 5Y IqJ IjjJ H> 'fh 1*1 fh fh LiinininiMtinininiMJ G1 1A 1Y 2A 2Y 3A 3Y 4A 4Y GND 81 L S 98 O 74LS367, 74LS268«8bit«fe o 74798 ¿ M b ms K-h IN OUT H ALSK F S AS AC ACT HC HCU

Contextual Info: S G S-THOMSON 0?E D I T54LS386 1 "J J te -T74LS386 . 4 7^237 Ü Q l t 3 S a fi I LOW POWER SCHOTTKY INTEGRATED CIRCUITS >- 67 C16 4 81 D —- T f 3 “/5‘ - HRELIMINARY DATA QUAD 2-INPUT EXCLUSIVE-OR GATE DESCRIPTION The T54LS386/T74LS386 is a high speed QUAD

2 sd 3402

Contextual Info: IRM3401/3402/3405/3415 SIEMENS Infrared Data Transceiver Preliminary Dimensions in inches mm IRM3401 — 1 020 (0.511 8 Pics. nnnnnn- 2 Pics. .237 ' w 15 -.118 .229 (5 .81) FEATURES • Meets All Applicable irDA Specifications • IrDA Data Rates Up to 4.0 M b/s

Radiotechnique 120

Abstract: EC81
Contextual Info: T R IO D E O S C IL L A T R IC E EC 81 POUR O N D E S D É C IM É T R IQ U E S 750 M Hz m axim um CARACTÉRISTIQUES Chauffage V f = 6,3 V (1) If = 0,2 A Indirect (cathode isolée du filam ent) Alimentation en parallèle C O N D IT IO N S N O M IN A L E S D 'E M P L O I

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9B81 Microcontroller D ATA SHE E T D S -LM3S 9B 81 - 1 3 4 4 2 . 2 5 4 9 S P M S 223I C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9U81 Microcontroller D ATA SHE E T D S -LM3S 9U 81 - 1 3 4 4 0 . 2 5 4 9 S P M S 261B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

transistor 1201 1203 1205

Abstract: transistor d 4515 EQUIVALENT FOR POWER SUPPLY OF RADIOS
Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9D81 Microcontroller D ATA SHE E T D S -LM3S 9D 81 - 1 3 4 4 0 . 2 5 4 9 S P M S 262B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9U81 Microcontroller D ATA SHE E T D S -LM3S 9U 81 - 1 3 4 4 0 . 2 5 4 9 S P M S 261B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9D81 Microcontroller D ATA SHE E T D S -LM3S 9D 81 - 1 3 4 4 0 . 2 5 4 9 S P M S 262B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9U81 Microcontroller D ATA SHE E T D S -LM3S 9U 81 - 1 3 4 4 0 . 2 5 4 9 S P M S 261B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9U81 Microcontroller D ATA SHE E T D S -LM3S 9U 81 - 1 3 4 4 0 . 2 5 4 9 S P M S 261B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9B81 Microcontroller D ATA SHE E T D S -LM3S 9B 81 - 1 3 4 4 2 . 2 5 4 9 S P M S 223I C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

634SS2

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9B81 Microcontroller D ATA SHE E T D S -LM3S 9B 81 - 1 3 4 4 2 . 2 5 4 9 S P M S 223I C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

2SA168

Contextual Info: TOSHIBA 2SA1681 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 6 81 Unit in mm PO W ER SWITCHING APPLICATIONS l.GMAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0M ±0.05 : V ç e ($at)~ —0.5V (Max.) 5 ÍTn = _1 Ai'

Contextual Info: TOSHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 81 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Unit in mm 10 + 0.3 • , f 3.2 ± 0 . 2 2.7±02 High DC Current Gain : h p g - 1500 Min. (VCE = - 3 V , IC=-2 .5A)

OC314

Abstract: SN54LS597 SN54LS598 SN74LS597 SN74LS598
Contextual Info: TYPES SN54LS597, SN54LS598, SN74LS597, SN74LS598 8-BIT SHIFT REGISTERS WITH INPUT LATCHES 0 2 6 3 5 , J A N U A R Y 19 81 — R E V IS E D D E C E M B E R 1 9 8 3 8 -B it Parallel S to rag e Register Inputs 'LS597 S N 5 4 L S 5 9 7 . . . J PACKAGE S N 7 4 L S 5 9 7 . . . J OR N PACKAGE

IRF1010E

Contextual Info: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier

Contextual Info: £ > M / m 11 9 •qns dH¥X 13 dS 3 6 E E Z E i U '« ] S H W s jju o jjD S ] ] DNIIdVH Z E 8X 8t t 90 60 81 • j o d pi ] P ' S d / d d j p d d u U j - S S d j d j o p o u u o j djeuidj d j j j o j d - M O j dd/q 5 I ' i • 1 o d 8 1/ 9 ‘ 5 0A0 0 ]p 0 0 u O 0 J d u |]