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    81000A Search Results

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    81000A Price and Stock

    VPG Transducers Y16256K81000A0W

    RES SMD 6.81KOHM 0.05% 0.3W 1206
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    DigiKey Y16256K81000A0W Tray 100
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    Avnet Americas Y16256K81000A0W Waffle Pack 100
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    • 100 $12.9794
    • 1000 $7.033
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    TE Connectivity RMW-25-8-1000-ADH-0

    HEATSHRINK 0.984" X 3.28' BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RMW-25-8-1000-ADH-0 Bulk 10
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    • 10 $18.804
    • 100 $18.804
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    Reliance North America WJEK508A-5.08-1000A-2*23P-14-RNA

    2*23 position PCB push-in spring
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    DigiKey WJEK508A-5.08-1000A-2*23P-14-RNA Ammo Pack 50
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    Reliance North America WJEK508A-5.08-1000A-2*09P-14-RNA

    2*9 position PCB push-in spring
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    DigiKey WJEK508A-5.08-1000A-2*09P-14-RNA Ammo Pack 50
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    Reliance North America WJEK508A-5.08-1000A-2*11P-14-RNA

    2*11 position PCB push-in spring
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    DigiKey WJEK508A-5.08-1000A-2*11P-14-RNA Ammo Pack 50
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    81000A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN4839

    Abstract: DS2103SY DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
    Text: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode


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    PDF DS2103SY DS4172-5 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 AN4839 DS2103SY DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26

    Untitled

    Abstract: No abstract text available
    Text: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification


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    PDF DS2103SY/DS2103SV DS4172-5 DS4172-6 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22

    DS2103SY

    Abstract: DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
    Text: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode


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    PDF DS2103SY DS4172-5 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 DS2103SY DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26

    Untitled

    Abstract: No abstract text available
    Text: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification


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    PDF DS2103SY/DS2103SV DS4172-5 DS4172-6 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22

    DS2103SY24

    Abstract: DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY25 DS2103SY26
    Text: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification


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    PDF DS2103SY/DS2103SV DS4172-5 DS4172-6 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 DS2103SY24 DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY25 DS2103SY26

    DS2103SY21

    Abstract: DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
    Text: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification


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    PDF DS2103SY/DS2103SV DS4172-5 DS4172-6 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26

    81623B

    Abstract: 81624B GE 7031 81624B-C01 Optical power meter
    Text: Agilent Optical Power Meter Head Special Calibration Data Sheet January 2010 This document describes the calibration of Agilent’s optical power meter heads 81623B, 81624B, 81626B for standard products as well as the “special calibrations” C01, C02, C85, C86,


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    PDF 81623B, 81624B, 81626B) 5988-7520EN 81623B 81624B GE 7031 81624B-C01 Optical power meter

    81610CC

    Abstract: 81000LI 81636B DIN47256 81002LI 81634B 81628B H 547 magnetic sensor 81623b
    Text: Agilent Power Sensor Modules Agilent Optical Heads Agilent Return Loss Modules Data Sheet Optical power measurement modules The Agilent optical power measurement modules provide high performance functionality to the Agilent Lightwave Measurement platform.


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    PDF 8163B, 8164B 8166B 816xA 81000xI 5988-1569EN 81610CC 81000LI 81636B DIN47256 81002LI 81634B 81628B H 547 magnetic sensor 81623b

    Untitled

    Abstract: No abstract text available
    Text: Agilent 71400C Lightwave Signal Analyzer Product Overview Calibrated measurements of high-speed modulation, RIN, and laser linewidth 2 High-Speed Lightwave Analysis The Agilent 71400C lightwave signal analyzer combines Agilent’s highestperformance RF spectrum analyzers


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    PDF 71400C 71400C 5980-1929E

    Untitled

    Abstract: No abstract text available
    Text: Agilent 8509C Lightwave Polarization Analyzer Product Overview Highly accurate and repeatable polarization measurements of signal and components 1280 nm to 1640 nm • L-Band extended wavelength option • High resolution and accuracy on narrowband devices


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    PDF 8509C 8509C 5988-1044EN

    Untitled

    Abstract: No abstract text available
    Text: ParBERT 81250 Parallel Bit Error Ratio Test Platform E4810A 3.35Gb/s 850nm Optical-Electrical Generator Module E4811A 3.35Gb/s 850nm Optical-Electrical Analyzer Module ParBERT Platform gains optical Features & Benefits • 21 Mb/s upto 3.35 Gb/s covers today's hot new devices


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    PDF E4810A 35Gb/s 850nm E4811A 5988-5901EN

    Untitled

    Abstract: No abstract text available
    Text: E6020A Fiber Break Locator Technical Data Sheet Specifications describe the instrument´s warranted performance, measured with typical PC- type connectors. Uncertainties due to the refractive index of fiber are not considered. The following section contains both Specifications and Characteristics:


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    PDF E6020A 5988-2301EN

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to


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    PDF 81000AS/ASG/AL 11000A 81000AS/AL THM81Q00 THMB1000 AS-70 THM81000AS/AL-70, THM81020AL-70,

    CI 3060 elsys

    Abstract: 175C TR2103SY TR2103SY21 TR2103SY22 TR2103SY23 TR2103SY24 TR2103SY25 TR2103SY26
    Text: TR2103SY TRAN SYS m cTR om cs 11 m *t e Rectifier Diode u KEY PARAMETERS VRRM 2600V 4785A F AV 81000A FSM APPLICATIONS • Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers FEATURES ■ Double Side Cooling


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    PDF TR2103SY 1000A TR2103SY26 TR2103SY25 TR2103SY24 TR2103SY23 TR2103SY22 TR2103SY21 1600g CI 3060 elsys 175C TR2103SY

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL DS2103SY Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 KEY PARAMETERS VRRM 2600V IF av, 4785A 'fs m 81000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.


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    PDF DS4172 DS2103SY 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 DS2103SY21

    as1000a

    Abstract: 74AS1000
    Text: SN74AS1000A. SN54AS1000A QUADRUPLE 2-INPUT P0SIT1VE-NAND BUFFERS/DRIVERS 02 161, APRIL 1984 - REVISEO MAY 198« SN54AS1000A . . . J PACKAGE SN74AS1000A. D OR N PACKAGE (TOP VIEW AS1000A is a Driver Version of 'ASOO AS1000A Offers High Capacitive-Driver


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    PDF SN74AS1000A. SN54AS1000A AS1000A 300-mll SN74AS1000A 1000A 74AS1000

    TCA 810

    Abstract: No abstract text available
    Text: DS2103SY M ITEL Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies. ■ W elding. ■ Battery C hargers. March 1998


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    PDF DS2103SY DS4172 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 DS2103SY21 TCA 810

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    KMM581000A

    Abstract: KM41C1000AJ KMM481000A-8
    Text: 81000A/81000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung 81000A and 81000A are 1 M x 8 dynamic RAM high density memory modules.


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    PDF KMM481000A/KMM581000A KMM481000A-8 KMM581000A-8 KMM481000A-10 KMM581000A-10 150ns 180ns 180ns KMM481000A KMM581000A KM41C1000AJ

    MCM81000AS10

    Abstract: motorola 30-pin simm memory dynamic mcm81000s
    Text: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA 1Mx8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and M CM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bils. The modules are 30-lead single-in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP)


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    PDF MCM81000 CM8L1000 30-lead 30-pin CM5110OOA MCM511000A 8L1000 MCM81000AS70 MCM81000AS80 MCM81000AS10 motorola 30-pin simm memory dynamic mcm81000s

    Untitled

    Abstract: No abstract text available
    Text: GM23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The


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    PDF GM23C8100A

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.


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    PDF CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word CXK5T81 131072words -10LLX -12LLX

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81000 1M x 8 Bit Dynamic Random Access Module T h e M C M 8 1 0 0 0 is a n 8 M d y n a m ic ra n d o m a c c e s s m e m o ry D R A M m o d u le o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 x 8 b its . T h e m o d u le is a 3 0 -le a d s in g le -in -lin e m e m o ry


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    PDF MCM81000 81000AS70 81000AS80 81000S70 81000S80 81000L70 81000L80 81000LH70 81000LH80

    ICE ICC3

    Abstract: KMM581000A-8 KMM581000A-10 KMM581000A10 km41c1000aj 30-pin simm memory KMM481000A-8
    Text: SAMSUNG S EM ICONDUCTOR INC E3E D • 7^4142 000Ô523 S ■ T 81000A/81000A - ï b - Z Z - l ' ? MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung 81000A and 81000A are


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    PDF KMM481000A/KMM581000A KMM481000A KMM581000A KM41C1000AJ 20-pin 22/iF KMM481000A/KMM581OOOA M481000A/KM ICE ICC3 KMM581000A-8 KMM581000A-10 KMM581000A10 30-pin simm memory KMM481000A-8