8150 SCR Search Results

HLMP-8150

Contextual Info: Whpl H E W L E T T % LfiMP A C K A R D High P o w er T - 4 13.3 mm TS AlGaAs R ed Lam p Technical Data HLMP-8150 15 Candela Featu res • 15 Candelas at 20 mA • Outstanding LED Material Efficiency • High Light Output Over a Wide Range of Drive Currents

MS-5-150

Abstract: MS4150
Contextual Info: .688 Density, 10-32 x 5/16" BH Screw, Open Bottom, Double Row Barrier Blocks Series 150 Electrical Characteristics Voltage Rating: 250 VAC RMS maximum Current Rating: 40 Amps maximum Maximum Watts Per Terminal: 10,000 Mechanical Characteristics Maximum Wire Size: #10 AWG

to-94

Abstract: TO83 CT65 C149 u c756 c1652 C140 C141 C148 C158
Contextual Info: 7 2 94 62 1 POWEREX TÏ INC DeT| 7214tEl QGDITIB 0 \ ~ T - i r S T - 7 Inverter Grade SCRs lT(RMS T c=65° C 50% Duty Cycle, H alf Sine 1KHz (Amps) I tsm (Amps) 50 Hz 60 Hz Idrm/Irrm @ Rated V d ru /V rru and Tj(Max) (mA) m Vtm fo r Fusing @ 8.3 ms (A2sec)

PD7451

Abstract: ic pc 74 HC 86 D
Contextual Info: UUILL Power Sources and Converters Excellence and Innovation Wall Industries, Inc. 100 and 150 Watts PD SERIES SPECIFICATIONS All specifications apply @ + 25 °C ambient unless otherwise noted. Due to advances in technology, specifications may change without notice.

MD-159

Abstract: MD159
Contextual Info: • I DOUBLE-BALANCED MIXER MODEL MD-159 5-1000 MHZ Guaranteed VSWR 45 dB Typical Midband L-R Isolation 6 dB Typical Midband Conversion Loss Guaranteed Specifications* From -5 5 ° C to +85°C Frequency Range RF, LO Ports IF Port 5-1000 MHz DC-1000 MHz

Contextual Info: DRAWING NUMBER SHEET 303B947 STYLE AA 1 OF 1 TERMINAL BLOCKS TOP . 25 0) IQ Sn azz? - w - F ft ( MTG AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB AA AB 9T58K0000G09 FUSE CLIPS 250 VOLTS, 20 AMPS MAX FOR 1/4" DIA X I 1/4" FUSES

Contextual Info: QHM-4R-G Series 90 POWER DIVIDERS / COMBINERS 500 MHz to 26.5 GHz / Multi-Octave Bandwidth / Low Insertion Loss / High Isolation / SMA PRINCIPAL SPECIFICATIONS Isolation, Amplitude Insertion Phase dB, Balance, dB, Tolerance, Loss, dB, Min. Max. Max. Max. Frequency

CV99Q400

Abstract: Johanson manufacturing 9694 CV99P250 CV99Q350 CV99N180 CV98F2R5 CV99Q400SL
Contextual Info: 9600 Series Seal-Trim Trimmer Capacitors The Seal-Trim® is a high performance Thin-Trim®trimmer ceramic capacitor encapsulated in a polymer housing. This design resists intrusion of dirt, dust, solder flux and cleaning agents during assembly and atmospheric

infineon radar

Abstract: infineon phased array radar
Contextual Info: GaAs Components Infineon tsjcKnti'og '«s Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development ot lll-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies

gaas wafer

Abstract: k-band infineon phased array radar
Contextual Info: GaAs Components Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development of III-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies

T0002

Abstract: WF-1024K8-150I WF-1024K8-150M
Contextual Info: W W h ite Technology, Inc. MEMORY PRODUCTS W F -1 0 2 4 K 8 -1 5 0 1 Megabyte x 8 Flash PROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES • Flash Chip Erase * 1 Second Page Erase * 8 Pages Total ■ Fast Programming * 10uSec Typical Byte

VTO-8090

Contextual Info: H Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features • 600 MHz to 10.5 GHz Coverage • Fast Tuning • +7 to +13 dBm Output Power • ±1.5 dB Output Flatness • Hermetic Thin-film Construction Description HP VTO-8000 Series oscillators

VTO-8000

Abstract: VTO-8090 VTO-810750 VTO-8248 VTO-8360 VTO-8850 VTO-8950
Contextual Info: Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features • 600 MHz to 10.85 GHz Coverage • Fast Tuning • +7 to +13 dBm Output Power • ±1.5 dB Output Flatness • Hermetic Thin-film Construction Description Agilent Technologies’s VTO-8000

TSK-2000

Abstract: metric screw tightening Torque TTE-3040 SAE multi leaf spring TPK-6000 10P10C TCS-5020 10A BATERY CHARGER TSK-2020 RG5 coaxial cable
Contextual Info: uest Technology is proud to introduce its first specialty catalog focused on the installation tool product lines. We’re including over 300 tool-line items, and when coupled with the over 3,000 interconnect products, makes Quest Technology one of the most diversified broadrange

e78996 india

Abstract: DIODE S4 72A si tel IRFK2F150 E78996 rectifier module IRFK2D150
Contextual Info: Bulletin E2791 International ^ r!Rectifier IRFK2D150,IRFK2F150 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • ■ ■ • High C u rre n t C apability. UL re c o g n is e d E 78996. E lectrically Isola ted B ase Plate. E asy A s s e m b ly into E quipm ent.

e78996 india

Abstract: E78996 rectifier module F350 IRFK3D350 IRFK3F350 E2799
Contextual Info: Bulletin E2799 International IïôrI Rectifier IRFK3D350,IRFK3F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • H igh C urrent C apability. UL re cognised E 78996. E lectrically Isolated B ase Plate. E asy A s s e m b ly into E quipm ent.

J943-4554

Abstract: e78996 india E78996 rectifier module IR E78996 IRFK6H250 u114 IRFK6J250 J9-43
Contextual Info: Bulletin E 2 7111 International Ii ÔrIRectifier IRFK6H250,1RFK6 J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • H igh C urrent C apability. UL recognise d E 78996. E lectrically Isola ted B ase Plate. E asy A ssem b ly into E quipm ent.

Str 5754

Abstract: Str W 5754 e78996 india IRFK2DC50 IRFK2FC50
Contextual Info: Bulletin E2795 International Ik ^IRectifier IRFK2DC50,IRFK2FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

IRFK4H054

Abstract: IR E78996 E78996 rectifier module IRFK4J054 e78996 india hex-pak J054 rfk4
Contextual Info: Bulletin E27103 International ^ R e c tifie r IRFK4H054,IRFK4J054 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

IRFK2D450

Abstract: dk 22A e78996 india IRFK2F450
Contextual Info: Bulletin E2794 International lïëRlRwrtifter IRFK2D450,IRFK2F450 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • H igh C u rre n t C apability. U L re cognise d E 78996. E lectrically Isolated Base Plate. E asy A s s e m b ly into E quipm ent.

Contextual Info: 19-0087; Rev 0; 11/92 j u w n c i j i / i C M O S , D u a l, 8 -B it B u ffe re d M u ltip ly in g D A C 1.1 This specification covers the detail requirements for a dual, 8-bit buffered multiplying DAC. This circuit is processed in accordance with MIL-STD-883 and is fully compliant to paragraph 1.2.1.

VTO-8090

Contextual Info: Wtiili HEWLETT mL'HM PA C K A R D Avantek Products Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features Description Pin Configuration • 300 MHz to 10.5 GHz Coverage IIP VTG-8000 Scries oscillators use a silicon transistor chip as a negative

E78996 G1 G2

Abstract: e78996 india E78996 rectifier module IRFK2D350 IRFK2F350 E2793
Contextual Info: Bulletin E2793 International ¿3g]Rectifier IRFK2D350,IRFK2F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High C urrent C apability. UL recognised E78996. E lectrically Isolated Base Plate. Easy A ssem b ly into E quipm ent.

MJ100BE55

Abstract: MJ100BE
Contextual Info: 6367254 MOTOROLA SC MOTOROLA CXSTRS/R F »E|b3t,7ESM ooam^T d 96D 8 1 4 9 9 d T-33-3S- vsruer uns ucua diitiet by MJ100BE55/D | SEMICONDUCTOR TECHNICAL DATA MJ100BE55 IMPINI Silicon Power Transistor Module Energy M anagement S eries These Darlington transistors are designed for industrial service under practical operat­