81A DIODE Search Results

APT81H50L

Abstract: APT81H50B2 MIC4452 A1270 ultra fast recovery diode 500V
Contextual Info: APT81H50B2 APT81H50L 500V, 81A, 0.07Ω Max, trr ≤260ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for

f1010e

Abstract: to-218 IRF1010N IRFP054N PE10 TOP100-4 A19-B
Contextual Info: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A† S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: SIEMENS GaAs IRL 80A IRL 81A GaAIAs INFRARED EMITTER Package Dimensions in Inches mm .650(16.51) 230 (5.84) 220 (5.59) .100 {2 54) .080 (2.03) 1' 092 (2.34) 082 (2.OS) ,180(4.57) .170(4.32) „ Mold mark 0 .061 (1.52) .067 (1.70) 057(1.45) ,01 (.25) indent,

f1010e

Abstract: IRFP054N SS2000 DIODE marking le st TO-247AC Package IRF1010N PE10
Contextual Info: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A† S Description Fifth Generation HEXFETs from International Rectifier

irf1010e

Abstract: irf1010e equivalent *f1010e
Contextual Info: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier

IRL80A

Contextual Info: SIEM EN S GaAs -fit IR L 80A GaAIAs IRL 81A Infrared Emitter Dimensions in inches mm .660(16.51) .630 (16,00) - .230(5.84) .220 (5.59) .100(2.54) .080 (2.03) 092 (2.34) .082 (2.08) |-.06 L io o (2.54) Plastic méiKing .061 (1.52}-J •OK) (0.76) R - ^ .025 (0.64)

Contextual Info: SIEMENS GaAs IRL 80A IRL 81A GaAIAs Infrared Emitter Dimensions in inches mm .650(16.51) .630 (16.00) r t .06(1.52) 100 (2.54) Anode APPLICATIONS • Beam interruption usage • Light barriers DESCRIPTION .100 (2.54) .080 (2.03) 092 (2.34) 082 (2.08) Cathode

IRFP4668PBF

Abstract: diode AE 81A
Contextual Info: IRFP4668PBF TO-247AC Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l l l l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

IRFP4668

Contextual Info: PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFP4668

Abstract: IRFP4668PbF AN-994 4.5V to 100V input regulator a/kvp 81A DIODE
Contextual Info: PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Philips schema

Abstract: facon diode haute tension induction heating schema K81A noise diode ks1A Scans-0017953
Contextual Info: [K8ÏÂ PHILIPS NOISE DIODE for use as a standard noise source for metric waves DIODE DE SOUFFLE pour utilisation comme source de bruit étalon pour ondes métriques RAUSCHDIODE zur Verwendung als Normalrauschquelle für Meterwellen Heating : direct by A.C. or D.C.

zener 8m

Abstract: FMMZ5232 8Y SOT23 FMMZ5233 FMMZ5234 FMMZ5235 FMMZ5236 FMMZ5237 FMMZ5238 FMMZ5239
Contextual Info: FMMZ5232 to FMMZ5257 ISSUE 2 - SEPTEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Type No FMMZ5232 to FMMZ5257 SOT23 SILICON VOLTAGE REGULATOR DIODES ✪ PIN CONFIGURATION Test Max. Zener Max. Reverse Leakage Current Max. Zener Nominal Current Impedance

rop 101

Contextual Info: IN TE G R A TE D CIRCUITS EMTA S&flEET PCF84C81A Telecom microcontroller 1998 Apr 20 Product specification Supersedes data of 1996 Nov 20 File under Integrated Circuits, IC14 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

Contextual Info: 19-2678; Rev 0; 9/02 Quick-PWM Master Controllers for VoltagePositioned CPU Core Power Supplies IMVP-IV Features The MAX1907A/MAX1981A are single-phase, QuickPWM master controllers for IMVP-IV™ CPU core supplies. Multi-phase operation is achieved using a

max1907

Abstract: max1907A MAX1907AETL IRF 444 H sanyo 8713 IRf 447 MOSFET MAX1981A "Op Amp" lm 324 inductor sp IRf 444 MOSFET
Contextual Info: 19-2678; Rev 0; 9/02 Quick-PWM Master Controllers for VoltagePositioned CPU Core Power Supplies IMVP-IV Applications IMVP-IV Notebook Computers Single-Phase CPU Core Supply Multiphase CPU Core Supply Voltage-Positioned Step-Down Converters Servers/Desktop Computers

Contextual Info: SKM 75GB063D  8 19 :       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 -  8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G  8 19 :) >9 -  8 H0 :) 90 - /90 - ; 8 /90 :) II0 - 

AON6444L

Contextual Info: AON6444L 60V N-Channel MOSFET TM SDMOS General Description Product Summary The AON6444L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited

Contextual Info: SKM 75GB063D  8 19 :       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 -  8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G  8 19 :) >9 -  8 H0 :) 90 - /90 - ; 8 /90 :) II0 -  8 19 :)

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

81g diode

Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
Contextual Info: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232

BZX 12v zener diode

Contextual Info: Zener Diode BZX84C MMBZ5221B - 5256B 4 Volt Type BZX 84 T ype M M BZ Part M arkings BZX MMBZ " m iniR eel O rder N um ber 500pcs. IniniB ag 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232 72-5234 72-5235 72-5236 72-5237 72-5239 72-5240

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

marking 81E

Abstract: TMPZ5231 Zener diode 81A marking 8C marking 8G mmbz52 MMBZ5227B 8B MMBZ5226B MMBZ5227B MMBZ5228B
Contextual Info: SURFACE MOUNT ZENER DIODES MMBZ52-SERIES 350mW Part No. Nominal Dynamic Test Dynamic Test Reverse Test Current Imped. Current Current Voltage Package Ir µA Vr(V) Reel Cross- Marking Zen.Vltg. Imped. Reference Code @ Izt @ Izt Vz(V) Zzt(Ω) @ Izk Izt(mA)