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    81H1 Search Results

    81H1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    G881H1121C3HR Amphenol Communications Solutions Micro Power 3.0 Connector System - G881 Series, Wire to Board connector, , Housing, Single Row, 11 positions , Ny66, Black, BAG Visit Amphenol Communications Solutions
    RJHSE5481H1 Amphenol Communications Solutions Modular Jack - 8P8C, RA, THT, Single Port, Shield With Top and Side EMI Tabs, With LEDs, 3.99mm Tail Length Visit Amphenol Communications Solutions
    G881H1021C3HR Amphenol Communications Solutions Micro Power 3.0 Connector System - G881 Series, Wire to Board connector, , Housing, Single Row, 10 positions , Ny66, Black, BAG Visit Amphenol Communications Solutions
    G881H1222CEU Amphenol Communications Solutions Micro Power 3.0 Connector System - G881 Series, Wire to Board connector, , Housing, Dual Row, 12 positions , Ny66, Black, BAG Visit Amphenol Communications Solutions
    G881H1221C3HR Amphenol Communications Solutions Micro Power 3.0 Connector System - G881 Series, Wire to Board connector, , Housing, Single Row, 12 positions , Ny66, Black, BAG Visit Amphenol Communications Solutions
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    81H1 Price and Stock

    Murata Manufacturing Co Ltd GCM188L81H103KA03D

    CAP CER 10000PF 50V X8L 0603
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    DigiKey GCM188L81H103KA03D Cut Tape 15,670 1
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    GCM188L81H103KA03D Reel 12,000 4,000
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    Avnet Americas GCM188L81H103KA03D Reel 14 Weeks 4,000
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    Avnet Abacus GCM188L81H103KA03D Reel 19 Weeks 4,000
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    Chip1Stop GCM188L81H103KA03D Cut Tape 7,696
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    Murata Manufacturing Co Ltd GCM188L81H153KA37D

    CAP CER 0.015UF 50V X8L 0603
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    DigiKey GCM188L81H153KA37D Digi-Reel 11,910 1
    • 1 $0.11
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    GCM188L81H153KA37D Cut Tape 11,910 1
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    GCM188L81H153KA37D Reel 8,000 4,000
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    Avnet Abacus GCM188L81H153KA37D 19 Weeks 4,000
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    Kyocera AVX Components KGM21BR81H103KT

    CAP CER 10000PF 50V X8R 0805
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    DigiKey KGM21BR81H103KT Digi-Reel 10,826 1
    • 1 $0.27
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    KGM21BR81H103KT Cut Tape 10,826 1
    • 1 $0.27
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    KGM21BR81H103KT Reel 8,000 4,000
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    Murata Manufacturing Co Ltd GCM188L81H104MA57J

    CAP CER 0.1UF 50V X8L 0603
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    DigiKey GCM188L81H104MA57J Digi-Reel 2,671 1
    • 1 $0.15
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    GCM188L81H104MA57J Cut Tape 2,671 1
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    Avnet Abacus GCM188L81H104MA57J 17 Weeks 10,000
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    ANYSOLAR Ltd SLMD481H12L

    MONOCRYST SOLAR CELL 1.08W 7.56V
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    DigiKey SLMD481H12L Bulk 730 1
    • 1 $35.07
    • 10 $35.07
    • 100 $25.3393
    • 1000 $23.68673
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    Find more 81H1 price and stock on Findchips.com

    81H1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111 PDF

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S PDF

    Samsung Flash K9WAG08U1A

    Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
    Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A PDF

    K9WBG08U1M

    Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
    Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P PDF

    K9F2G08U0B-PCB0

    Abstract: K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B-PCB0 K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung PDF

    K9F8G08U0A-P

    Abstract: K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0
    Text: Advance FLASH MEMORY K9WBG08U5A K9F8G08U0A K9F8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9WBG08U5A K9F8G08U0A 100ns) K9F8G08U0A-P K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59D2G81A 250us PDF

    NAND Flash

    Abstract: No abstract text available
    Text: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit


    Original     		F59D4G81A F59D4G161A 16bit NAND Flash PDF

    K9F4G08U0M

    Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C PDF

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0 PDF

    TC58NVG2S3ETA00

    Abstract: TC58NVG2S3E NAND read disturb TC58NVG2S3 tc58nvg2s
    Text: TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		TC58NVG2S3ETA00 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETA00 NAND read disturb TC58NVG2S3 tc58nvg2s PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NVG1S3HBAI4 TC58NVG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NVG1S3HTA00 TC58NVG1S3HTA00 2048blocks. 2176-byte 2013-01-18C PDF

    57E6

    Abstract: No abstract text available
    Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 81234567889ABACDEFA8D98888888 8 88888888 8 88888888 8 88888888 8 8 A87C 123314567891A758BCD814E1F3D167D1F1C5A36 3AB88DA8 DE !"#$%88&'7 8&981CC8!"#8AABA9


    Original     		1234567889ABACDEFA 123314567891A758BCD814E1F3 167D1 81CC8 CD33D A36CD91 CD33B367 E5B7135C631 1E5B71 B7D16 57E6 PDF

    TC58NVG2S3ETAI0

    Abstract: TC58NVG2S3E TC58NVG2S3
    Text: TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		TC58NVG2S3ETAI0 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETAI0 TC58NVG2S3 PDF

    TC58NVG0S3ETA00

    Abstract: TC58NVG0S3ET tc58nvg0s3eta TC58NVG0S3E TC58NVG DIN2111 PA15 2011-03-01C
    Text: TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NVG0S3ETA00 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ETA00 TC58NVG0S3ET tc58nvg0s3eta TC58NVG DIN2111 PA15 2011-03-01C PDF

    TC58NVG0S3ET

    Abstract: TC58NVG0S3ETAI0 tc58nvg0s3eta tc58nvg0s3e tc58nvg 48-P-1220-0 0x000160
    Text: TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NVG0S3ETAI0 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ET TC58NVG0S3ETAI0 tc58nvg0s3eta tc58nvg 48-P-1220-0 0x000160 PDF

    tc58nyg1s3ebai5

    Abstract: TC58NYG1
    Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1 PDF

    TC58NVG0S3EBAI4

    Abstract: TC58NVG0S3EBA tc58nvg0s3e tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET
    Text: TC58NVG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NVG0S3EBAI4 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBAI4 TC58NVG0S3EBA tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET PDF

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S PDF

    TC58NYG2S3ETAI0

    Abstract: toshiba NAND ID code
    Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		TC58NYG2S3ETAI0 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NYG2S3ETAI0 toshiba NAND ID code PDF

    TC58NVG1S3ETAI0

    Abstract: TC58NVG1S3 TC58NVG1S3ET TC58NVG1S3ETA
    Text: TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG1S3ETAI0 TC58NVG1S3E 2048blocks. 2112-byte TC58NVG1S3ETAI0 TC58NVG1S3 TC58NVG1S3ET TC58NVG1S3ETA PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF