824 MOSFET Search Results

Contextual Info: ADP5310READJ-EVALZ User Guide UG-824 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the ADP5310 Step-Down Regulator FEATURES GENERAL DESCRIPTION 700 nA ultralow quiescent current

BTS 824 E

Abstract: BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824
Contextual Info: Target Datasheet BTS 824 Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(ISO) Current limitation IL(SCr) Package P-DSO-20-10 (Power SO 20)

MTO-3p

Abstract: 824 mosfet 2SK2177
Contextual Info: Power MOSFET V X -II series E-pack SMD N-Channel, Enhancement type TO-220 MTO-3P Electrical Characteristics Absolute Maximum Ratings Type No. Tch [°C] [V ] V gss Io Pt RostON) (max) [V ] CA] [W] [Q ] [pF] [pF] [nS] [nS] 7 4 140 220 13 17 35 40 70 2.3 400

oni 350

Contextual Info: Power MOSFET r:C E-pack SMD V X -II series TO-220 ÿ U / " STO-220 (SMD) ITO-3P MTO-3P MTO-3L N-Channel. Enhancement type Electrical Characteristics Absolute Maximum Ratings toff (typ) V gss Id Pt (max) r c ] [V ] [V ] [A ] [W ] [O ] [pF] [pF] [ns] [ns]

2SK2177

Contextual Info: Power MOSFET msmmm E-pack SMD TO-220 N-Channel, Enhancement type Absolute Maximum Ratings Electrical Characteristics (max) C«, (typ) (typ) t«, (typ) (typ) [pF] [pF] [ns] [ns] R d S(ON) Type No. Tch V dss Vgss Id Pt re ] [V ] [V ] [A ] [W ] [Q ] totf 2SK2177

Contextual Info: Pow er MOSFET V/ h . ‘j E-pack SMD HVX-H series // TO-220 STO-220 (SMD) MTO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. Tch V dss V gss Id Pt rc ] [V ] [V] [A ] [W ] 2SK2663 2664 2665 •s * h 2666 2667 - G * C rss ton toff

Contextual Info: Power MOSFET HVX- Il series E-pack SMD N-Channel, Enhancement type TO-220 FTO-220 Electrical Characteristics Absolute Maximum Ratings Pi (max) Ct. (typ) [A] [W ] [9 3 [pF] [pF] 1 10 50 14.0 4.7 230 3 630 5 16 3 3 50 30 4.7 4.7 630 16 40 40 630 16 40 R dsìo n )

Contextual Info: Power MOSFET E-pack SMD HVX- II series TO-220 STO-220 (SMD) ITO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. 2SK2663 2664 2665 2666 2667 2668 2669 2670 2671 2672 2673 2674 2675 2676 2677 2333 Electrical Characteristics R d s (on )

SKY85703

Abstract: SKY77758
Contextual Info: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

Si7440DP

Contextual Info: SPICE Device Model Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

NS4150

Abstract: Si7440DP
Contextual Info: SPICE Device Model Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

shd225452

Abstract: IRF52
Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S

0.1 uf Ceramic Capacitors 104

Abstract: RuGGed Chip filter capacitor 155 k 630 a
Contextual Info: VJ Series RuGGed Multilayer Ceramic Chip Capacitors New RuGGed Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors • At 120 Hz, ESR of 100-V-rated RuGGed chip is typically less than a quarter that of an aluminum electrolytic capacitor with the same capacity and

3N163-64

Abstract: MOSFET 3N 200
Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch _ ^ mm « /« Iä W I# . C Q IO Q IC M \J CORPORATION 3N163/3N164 ABSOLUTE MAXIMUM RATINGS N o te l (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance

rfp50n06 equivalent

Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
Contextual Info: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA

3N163

Abstract: 3N163-64 3N164
Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage

Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are

Contextual Info: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9101, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge.     These devices are particularly suited for low voltage power management, such as smart

Contextual Info: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637, P-Channel enhancement mode OSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM9102B, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge.    These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone