828 NPN Search Results

SF 829 B

Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Contextual Info: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

828BD

Abstract: BD NPN transistors BD 826 NPN
Contextual Info: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60

2SB865

Contextual Info: Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006A [2SB865/2SD1153] Features · High DC current gain 4000 or more .

transistor 828

Abstract: iC 828 Transistor transistor 468 NPN Transistor TO92 JC547 828 npn 828 TRANSISTOR equivalent BCY87 to-71 transistor TO-92
Contextual Info: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) NPN COMPL. PAGE JC556B TO-92 65 100 500 220 475 100 JC546B 796 JC557 TO-92 45 100 500 125 800 100

2SB865

Abstract: 2SD1153 ITR08508 ITR08509 ITR08510
Contextual Info: Ordering number:ENN828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006B [2SB865/2SD1153] Features 6.0

.W07B

Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
Contextual Info: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s

bo 828

Abstract: 828 diode K8111 K8180
Contextual Info: OPTEK Product Bulletin OPB828 May 1993 Slotted Optical Switches Types OPB828A, OPB828B, OPB828C, OPB828D Features Absolute Maximum Ratings T a = 25 ° C u n le ss otherwise noted • • • • Storage and Operating Temperature R a n g e . -40°C to +85°C

828 diode

Abstract: HA20
Contextual Info: OPTEK Product Bulletin OPB828 July 1996 Slotted Optical Switches Types OPB828A, OPB828B, OPB828C, OPB828D Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Printed circuit board mounting • 0.125‘ (3.18 mm) wide slot Storage and Operating Temperature R a n g e . -40° C to +85° C

2SD1556

Abstract: 2SD1556 equivalent
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE -2SD1556 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: 1 5 .S ¿ a 5 , 0 3 . 6 i a 3 . High Voltage 3.o±a3 :V c b o =1500V . Low Saturation Voltage: VcE sat =5V(Max.) (Ic=5A, 1b =1A) . High Speed :tf = l,Ojjs(Max.)

2SC1891

Contextual Info: 2SC5028 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POW ER AM PLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • • • • Low Collector Saturation Voltage : v C E (s a t)= -° -5V (Max.) (Ic = -1 A ) High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

C 828 Transistor

Contextual Info: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP

C 828 Transistor

Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor
Contextual Info: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power

MG200H1AL2

Abstract: iC 828 Transistor 828 TRANSISTOR equivalent MG200H1 transistor 828
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=80 Min. (Ic=200A) . Low Saturation Voltage

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

2SC2121

Abstract: cannon terminal g25a AC42C
Contextual Info: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A

PSA44

Abstract: PSA-45 B 828 transistor PSA45
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors MPSA44; MPSA45 FEATURES PINNING • Low current max. 300 mA PIN • High voltage (max. 400 V). 1 collector 2 base 3 em itter APPLICATIONS DESCRIPTION • Telecom m unication applications.

SOT23 marking 828

Abstract: 46 marking
Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3

Siren Sound Generator circuit diagram

Abstract: internal circuit of UM3561 siren police diagram UM3561A circuit diagram of police siren UM3561 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound
Contextual Info: UM3561A Three Siren Sound Generator Features A magnetic speaker can be driven by connecting an NPN transistor Power on reset • Four sounds can be selected ■ Typical 3V operating voltage * RC oscillator with an external resistor General Description The UM3561A is a low-cost, low-power CMOS LSI designed

Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol

transistors BC 543

Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Contextual Info: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,

TIP42A

Abstract: TIP41 TIP42 TIP42B TIP42 amplifier TIP42 applications w826 ibm 1981 a-3131 A3131
Contextual Info: TIP42;A TIP42B;C SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general ou tput stages o f am plifier circuits and switching applications. NPN complements are TIP41 series. Q UICK REFERENCE D A T A

Contextual Info: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.

2ND55

Abstract: 2N828 2n4933 *423 pnp 2N2482 2n711 2N3733 2N3866 2N401 MT72j
Contextual Info: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - Of NPN type « Rated Breakdown VottaiM V V V CB CB EB VCE 65 6b :^N3e32] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866 f ?N3S24