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    828 TRANSISTOR Search Results

    828 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    828 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    balancing resistors for voltage sharing

    Abstract: balancing resistors International Resistive Company wsml WA80Z IRC gs-3 1 ohm 5 15W IRC GS-3 TO
    Text: p. 1/2 International Resistive Company, Inc. DATE: November 15, 2007 TO: Sales Force cc: FROM: Bryan Yarborough SUBJECT: Application Note Wirewound and Film Technologies Division 736 Greenway Road, P.O. Box 1860 Boone, North Carolina 28607, USA Telephone: +1 828 264 8861


    Original     		PDF

    intel MOTHERBOARD pcb design in

    Abstract: intel pentium 4 motherboard schematic diagram 450NX C 828 Transistor pins pc motherboard schematics Pentium II Xeon
    Text: E AP-828 APPLICATION NOTE Pentium II Xeon Processor Power Distribution Guidelines June 1998 Order Number: 243772-001 5/28/98 3:57 PM 24377201.DOC INTEL CONFIDENTIAL until publication date Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or


    Original     		PDF AP-828 intel MOTHERBOARD pcb design in intel pentium 4 motherboard schematic diagram 450NX C 828 Transistor pins pc motherboard schematics Pentium II Xeon

    transistor 828

    Abstract: iC 828 Transistor transistor 468 NPN Transistor TO92 JC547 828 npn 828 TRANSISTOR equivalent BCY87 to-71 transistor TO-92
    Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) NPN COMPL. PAGE JC556B TO-92 65 100 500 220 475 100 JC546B 796 JC557 TO-92 45 100 500 125 800 100


    Original     		PDF JC556B JC546B JC557 JC547 JC557A JC547A JC557B JC547B JC557C JC547C transistor 828 iC 828 Transistor transistor 468 NPN Transistor TO92 JC547 828 npn 828 TRANSISTOR equivalent BCY87 to-71 transistor TO-92

    Untitled

    Abstract: No abstract text available
    Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier


    Original     		PDF 64-byte

    3654A

    Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0
    Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier


    Original     		PDF 64-byte 128-byte 3654A at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0

    C 828 Transistor

    Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
    Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE


    Original     		PDF MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9

    C 828 Transistor

    Abstract: transistor c 828 cii to-5 type mad relay
    Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE


    Original     		PDF MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor transistor c 828 cii to-5 type mad relay

    SF 829 B

    Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
    Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)


    OCR Scan     		PDF SF827 SF829 SF82B SF82S SF 829 B SF819 sf 829 d SF126 SF826 sf829c SF816 SF 827 d

    2SK1828

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1828 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2SK1 828 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2 .5 - 0 .3 + 0.25 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode


    OCR Scan     		PDF 2SK1828 O-236MOD SC-59 10//S 2SK1828

    bd 825 10

    Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
    Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,


    OCR Scan     		PDF Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1305 Q62702-D1306 Q62702-D1113 Q62702-D1309 Q62702-D1310 Q62702-D1311 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 BD829 D1113

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK1828 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 828 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 + 0.25 i 1.5-0.15 i 2.5V Gate Drive Low Threshold Voltage : V^h —0.5—1.5V


    OCR Scan     		PDF 2SK1828 O-236MOD SC-59

    828BD

    Abstract: BD NPN transistors BD 826 NPN
    Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60


    OCR Scan     		PDF 00142bQ 828BD BD NPN transistors BD 826 NPN

    2SK1828

    Abstract: 2SK182
    Text: TOSHIBA 2SK1828 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S TYPE 2 S K 1 828 H IG H SPEED S W IT C H IN G A P P L IC A T IO N S A N A L O G S W ITC H A P P L IC A T IO N S 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V


    OCR Scan     		PDF 2SK1828 10//S 2SK1828 2SK182

    Untitled

    Abstract: No abstract text available
    Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter


    OCR Scan     		PDF BF840 BF841

    Untitled

    Abstract: No abstract text available
    Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.09 0.48 1 0.38 1 1 3 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 I 2.4 I1 .


    OCR Scan     		PDF BF840 BF841

    R005 FZ

    Abstract: transistors C 828 BF841 BF840 ic MARKING FZ
    Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors M a y in g BF840 = NC BF841 = ND PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 2.6 1.4


    OCR Scan     		PDF BF840 BF841 BF840 R005 FZ transistors C 828 BF841 ic MARKING FZ

    .W07B

    Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
    Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s


    OCR Scan     		PDF 2SB828/2SD1064 0V/12A 2SB828 2SD1064 .W07B W07b 722G 2SB82B as1012

    transistors BC 543

    Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
    Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,


    OCR Scan     		PDF Q62702-D1303 Q62702-D13Q4 Q62702-D1179 Q62702-D1257 Q62702-D1307 Q62702-D1308 Q62702-D61 Q62702-D1312 Q62702-D1313 Q62702-D1238 transistors BC 543 BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825

    transistors C 828

    Abstract: BF840
    Text: CDU BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors M arking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN mm 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ' ABSOLUTE M AXIM UM RATIN GS BF840 Collector-base voltage open emitter


    OCR Scan     		PDF BF840 BF841 BF840 BF841 transistors C 828

    C 828 Transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF Emitter-Ba01 C 828 Transistor

    C 828 Transistor

    Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor
    Text: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power


    OCR Scan     		PDF CJD44H11 CJD45H11 CJD44H11, CP219 26-September C 828 Transistor B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V /( jis Slew Rate 80 ns Settling Tim e to 0.01% Low Power 15 m A Max Power Supply Current High Output Drive Capability:


    OCR Scan     		PDF

    C 828 Transistor

    Abstract: marking code 20A iC 828 Transistor LB1200
    Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for


    OCR Scan     		PDF CZT5338 OT-223 CP219 26-September OT-223 C 828 Transistor marking code 20A iC 828 Transistor LB1200

    2SD1741

    Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604
    Text: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity


    OCR Scan     		PDF 2SD1741, 2SD1741A 2SD1741 2SD1741A 3Efl52 2SB1171 2SB1171A ic 4604 tc 4604