837 MOSFET Search Results

pioneer mosfet

Abstract: AVNET Cross Reference MOSFET 818 ln avnet pioneer ic
Contextual Info: - " r r p c i A DISTRIBUTOR AND WORLDWIDE SALES OFFICES AUTHORIZED NORTH AMERICAN DISTRIBUTORS UNITED STATES: ALABAMA Huntsville Future E lectro n ics. 205 830-2322 Hall-Mark Electronics .(205)837-8700

IRL2203N equivalent

Abstract: ap 437 5V voltage regulator namics UCC1837
Contextual Info: UCCI 837 UCC2837 UCC3837 PRELIMINARY FEATURES DESCRIPTION • On Board Charge Pump to Drive External N-MOSFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout Voltage The UCC3837 Linear Regulator Controller includes all the features required for an ex­

*f6p02

Abstract: NTMS4700NR2
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 12 6.5 2 NTMD6N02 Max Rating Config. Page No. D 758

UCC1837

Contextual Info: y U IM IT R O D E UCC1837 UCC2837 UCC3837 PRELIMINARY FEATURES DESCRIPTION • On Board Charge Pump to Drive External N-MOSFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout Voltage The UCC3837 Linear Regulator Controller includes all the features required for an ex­

Contextual Info: IRLS640A Advanced Power MOSFET FEATURES BVdss = 200 V • Logic Level Gate Drive ■ Avalanche Rugged Technology RDS on = 0.18 ■ Rugged Gate Oxide Technology In = 9.8 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area

250M

Abstract: JS-50
Contextual Info: IRLR120/121 IRLU120/121 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRFIP450

Abstract: CD 834 AN972
Contextual Info: PD-9.645A International ü * l Rectifier IRFIP450 HEXFET Power MOSFET • • • • • • • Isolated Package DC Package !solation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm Dynamic dv/dt Rating

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for

MRF281Z

Abstract: motorola j117
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for

837 mosfet

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE FS30KM-06 OUTLINE DRAWING Dimensions in mm • 10V D R IV E • V dss . • TDS ON (M AX ) .

Ni200

Abstract: MRF281Z
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for

motorola j117

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications at frequencies from 1000 to 2500 MHz. Characterized for operation

Contextual Info: Analog Power AMA423P P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • 2mm x 2mm footprint DFN package • RDS rated at 1.8V Gate-drive VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 42 @ VGS = -4.5V 57 @ VGS = -2.5V

Contextual Info: DRV8837 www.ti.com SLVSBA4 – JUNE 2012 LOW-VOLTAGE H-BRIDGE IC Check for Samples: DRV8837 FEATURES DESCRIPTION • The DRV8837 provides an integrated motor-driver solution for cameras, consumer products, toys, and other low-voltage or battery-powered motion-control

Contextual Info: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: DRV8837 www.ti.com SLVSBA4A – JUNE 2012 – REVISED AUGUST 2012 LOW-VOLTAGE H-BRIDGE IC Check for Samples: DRV8837 FEATURES DESCRIPTION • The DRV8837 provides an integrated motor-driver solution for cameras, consumer products, toys, and other low-voltage or battery-powered motion-control

ZXMN2A03E6

Abstract: ZXMN2A03E6TA ZXMN2A03E6TC
Contextual Info: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: INTEGRATED CIRCUITS UC1706 UC2706 UC3706 U N IT R G D E Dual Output Driver DESCRIPTION FEATURES The UC1706 family of output drivers are made with a high-speed Schottky process to interlace between low-level control functions and highpower switching devices - particularly power MOSFET’s. These devices

j117 motorola

Abstract: motorola j117
Contextual Info: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station

75NF30

Abstract: stw75nf30 JESD97
Contextual Info: STW75NF30 N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET Power MOSFET Features Type VDSS RDS on max ID pW STW75NF30 300 V < 0.045 Ω 60 A 320 W • Exceptional dv/dt capability ■ Low gate charge ■ 100% Avalanche tested 2 1 Application

mosfet 4496

Abstract: MRF281ZR1 741 datasheet motorola MRF281SR1 motorola 947 rf power 4496 mosfet motorola j117 MRF281Z
Contextual Info: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station

200S

Abstract: MRF281SR1 MRF281ZR1 mosfet 4496 741 motorola
Contextual Info: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station