850 NM INFRARED EMITTING DIODE SMD Search Results
850 NM INFRARED EMITTING DIODE SMD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX181BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 180ohm POWRTRN |
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BLM15PX221SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 220ohm POWRTRN |
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BLM21HE601SH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN |
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BLM15PX800BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 80ohm POWRTRN |
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850 NM INFRARED EMITTING DIODE SMD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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vsmy3850gs08
Abstract: vsmy3850 VSMY3850-GS08
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VSMY3850 J-STD-020 2002/95/EC 2002/96/EC VSMY3850 11-Mar-11 vsmy3850gs08 VSMY3850-GS08 | |
Contextual Info: VSMY3850X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, |
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VSMY3850X01 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMY3850X01 18-Jul-08 | |
CECC00802
Abstract: J-STD-020B VSMG3700 VSMG3700-GS08 VSMG3700-GS18
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VSMG3700 VSMG3700 08-Apr-05 CECC00802 J-STD-020B VSMG3700-GS08 VSMG3700-GS18 | |
Contextual Info: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant |
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TSMG3700 TSMG3700 08-Apr-05 | |
TSMG3700
Abstract: TSMG3700-GS08 TSMG3700-GS18
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TSMG3700 TSMG3700 D-74025 08-Mar-05 TSMG3700-GS08 TSMG3700-GS18 | |
Contextual Info: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant |
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TSMG3700 TSMG3700 08-Apr-05 | |
Infrared led 850 smd
Abstract: GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor
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OP180 OP280 GaAs--OP180, GaAIAs--OP280K OP280KT, GaAlAs-OP280V, GaAlAs-OP280PS, OP180 OP280K, OP280KT Infrared led 850 smd GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor | |
Contextual Info: VSMY3850X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: p = 850 nm |
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VSMY3850X01 J-STD-020 AEC-Q101 VSMY3850X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VSMY2853SLContextual Info: VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • Peak wavelength: p = 850 nm |
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VSMY2853SL VSMY2853SL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMY2853SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions L x W x H in mm : 2.3 x 2.55 x 2.3 • Peak wavelength: λp = 850 nm |
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VSMY2853SL reVSMY2853SL 28-Mar-13 | |
Contextual Info: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm |
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VSMY3850 J-STD-020 VSMY3850 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMG3700 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm |
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VSMG3700 VSMG3700 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm |
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VSMY3850 J-STD-020 VSMY3850 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions L x W x H in mm : 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability |
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VSMG10850 VSMG10850 VEMD10940F J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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J-STD-020D
Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
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VSMG3700 VSMG3700 18-Jul-08 J-STD-020D VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd | |
Contextual Info: VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions L x W x H in mm : 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability |
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VSMG10850 VEMD10940F VSMG10850 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
J-STD-020D
Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18
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VSMG3700 VSMG3700 18-Jul-08 J-STD-020D VSMG3700-GS08 VSMG3700-GS18 | |
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability |
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VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 18-Jul-08 | |
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability |
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VSMG3700 VSMG3700 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability |
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VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2011/65/EU 2002/95/EC. 2011/65/EU. | |
BPW41 circuit application
Abstract: OSRAM IR emitter
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VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter | |
VSMG3700
Abstract: VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
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VSMG3700 VSMG3700 18-Jul-08 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd | |
Contextual Info: VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: high power SMD with lens • Dimensions L x W x H in mm : 3.85 x 3.85 x 2.24 • |
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VSMY98545 VSMY98545 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: High power SMD with lens • Dimensions L x W x H in mm : 3.85 x 3.85 x 2.24 • |
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VSMY98545 VSMY98545 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |