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    85025F Price and Stock

    MACOM CMPA5585025F-AMP

    AMPLIFIER, 5.5-8.5GHZ, CMPA55850
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    DigiKey CMPA5585025F-AMP Box 2
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    Eaton Corporation 285025F-121-S

    Circuit Breakers 28X Hi-Amp Circuit Breaker
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    Mouser Electronics 285025F-121-S
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    RS 285025F-121-S Bulk 19 Weeks 60
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    Eaton Corporation 285025F-121-1

    Circuit Breakers 28X HI-AMP CIRCUIT BREAKER
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    Mouser Electronics 285025F-121-1
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    Eaton Corporation 185025F-01-1

    Circuit Breakers HI-AMP BREAKER
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    Mouser Electronics 185025F-01-1
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    RS 185025F-01-1 Bulk 19 Weeks 60
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    Eaton Corporation 185025F-01-S

    Circuit Breakers HI-AMP BREAKER
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    Mouser Electronics 185025F-01-S
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    RS 185025F-01-S Bulk 19 Weeks 60
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    85025F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    CMPA5585025F

    Abstract: power transistor gaas x-band CMPA5585025F-TB
    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    RF3-50

    Abstract: POWER456
    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456 PDF

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    x-Band Hemt Amplifier

    Contextual Info: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier PDF