850NM PHOTODIODE ANALOG AMPLIFIER Search Results

8C449

Abstract: 850nm photodiode pigtail fiber pigtail LED 850nm
Contextual Info: PRODUCT INFORMATION 8C449 850nm Datacom, General Purpose, Analog Applications PIN/Preamp This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance ATM up to 155 Mbps. The preamplifier’s linearity and absence of automatic gain

850nm photodiode analog amplifier

Abstract: LWL-DMA025 HFP1500 photodiode die WAFER 74AC 74HC iec 60793 LWL-DMA-025 schema DIGITAL TO ANALOG
Contextual Info: The information contained in this documentation is the property of MAZeT. Photocopying or otherwise reproducing any part of the catalog, whether electronically or mechanically, is prohibited, except where the express permission of MAZeT GmbH has been obtained. In general, all company and brand names, as well as the

650nm 5mw laser

Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Contextual Info: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |

LPD3010

Abstract: PRBS31 max3797 850nm photodiode analog amplifier 10GBASE-SR Rosa 850nm 16 SPD3010 Cosemi ROSA TIA AGC application note
Contextual Info: MAX3797 10.3Gbps, Low-Power Transimpedance Amplifier for 10GBASE-SR Applications General Description The MAX3797 is a low-power transimpedance amplifier designed for optical transmission systems at data rates up to 10.3125Gbps and for use with PIN diodes.

sensor FLC 100

Abstract: E001 G100 light sensor LED 10mA 850nm photodiode analog amplifier
Contextual Info: iC-LQ PULSE AND AC LIGHT SENSOR Rev A1, Page 1/8 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° ° ° ° Fast response amplifier with on-chip photodiode High interference immunity due to monolithic design Active photodiode area of 0.9mm² Suitable for visible light and near infrared

receiver photodiode 850nm dbm

Abstract: OPF0400 OPF1414 OPF2412 OPF2416 OPF2416T OPF2416TC OPF2418 p850
Contextual Info: 850nm Fiber Optic Receiver Module in Dual-in-Line Package Technical Data OPF2416, OPF2416T, OPF2416TC Features x x x x x x x 850 nm wavelength Link distance up to 2 km Data rates up to 155 Mbps Wide operating temperature range Optimized for use with 62.5/125µm and

transistor smd uw

Abstract: AEC-Q100 JESD22-A113 JESD22-B102 MLX75305 nlao melexis PIN photodiode sensitivity 850nm
Contextual Info: MLX75305 Light-to-Voltage SensorEyeC Features and Benefits Converts light intensity to voltage Designed for automotive applications High linearity Solder reflow 260degC, MSL3 Low temperature dependency Automotive qualified AEC-Q100 Grade 1 Supply voltage range 3V to 5.5V

Contextual Info: 123456758 29ABCDCEDFE C A 8 E 8 Features and Benefits 1 Converts light intensity to voltage 1 Designed for automotive applications 1 High linearity 1 Solder reflow 260degC, MSL3 1 Low temperature dependency 1 Automotive qualified AEC-Q100 Grade 1 1 Supply voltage range 3V to 5.5V

SD 041-41-43-211 API

Contextual Info: A dvanced P h o to HIGH SPEED SILICON DETECTOR/PREAMPLIFIER This series o f silicon PIN integrated receivers are designed for high speed, for both the digital and analog user. These flexible and versatile devices are used in video, computer and instrumentation applications. The detectors proportionately

850nm pair of optical Fiber-optic

Abstract: signetics rf Receiver Circuits photodiode for fiber-optic sensor 850nm photodiode analog amplifier cascode transimpedance
Contextual Info: NE5210 Signetics Transimpedance Amplifier 280MHz Preliminary Specification Linear Products DESCRIPTION FEATURES The NE5210 is a 7ki2 transimpedance wide band, low noise amplifier with dif­ ferential outputs, particularly suitable for signal recovery in fiber-optic receivers.

Fiber-optic temperature sensor 850nm photodiode

Abstract: NE5210 106 6K tantalum capacitors 5014 BLL 850nm photodiode Fiber-optic diode T35 12H Fiber-optic photodiode 850nm fiber-optic photodiode for 850nm NE5210D 300-MHz
Contextual Info: INTEGRATED CIRCUITS NE5210 Transimpedance amplifier 280MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PH ILIPS PHILIPS Philips Semiconductors Product specification Transimpedance amplifier (280MHz) NE5210 DESCRIPTION PIN CONFIGURATION

Contextual Info: Philips Sem iconductors Data Com m unications Products Product specification Transimpedance amplifier 280MHz DESCRIPTION NE5210 PIN CONFIGURATION The NE5210 is a 7kQ transim pedance wide band, low noise am plifier with differential outputs, particularly suitable fo r signal

Fiber-optic temperature sensor 850nm photodiode

Abstract: NE5210 354MHz 850nm pair of optical Fiber-optic 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm NE5210D SD004 BPF-31
Contextual Info: Philips Semiconductors Product specification Transimpedance amplifier 280MHz NE5210 DESCRIPTION PIN CONFIGURATION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many

NE5211D

Abstract: Fiber-optic temperature sensor 850nm photodiode 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm SA5211 SA5211D CURRENT TRANSFORMER transimpedance SA52-11 RF Transistor s-parameter 50Mhz
Contextual Info: Philips Semiconductors Product specification Transimpedance amplifier 180MHz NE/SA5211 DESCRIPTION PIN CONFIGURATION The NE/SA5211 is a 28kΩ transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many

Diode SV-02

Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
Contextual Info: INTEGRATED CIRCUITS NE/SA5211 Transimpedance amplifier 180MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS 7110fl2tj ODfl^T^a DDT • ! Philips Semiconductors Product specification Transimpedance amplifier (180MHz) NE/SA5211 DESCRIPTION

Contextual Info: Fiber Optic Receiver OPF2418, OPF2418T, OPF2418TC OPF2418 Family • • • • • Up to 194 Mbps operation 850nm wavelength ST style port Wave solderable Wide temperature range The OPF2418 family is a low cost solution for high speed fiber optic communications designs. The internal lensing of this receiver’s design allows optimal response for fiber sizes of 100µm and below. The receiver is comprised of a high speed, low

photodiode pin 850nm 155mbps

Contextual Info: Fiber Optic Receiver OPF2416, OPF2416T, OPF2416TC OPF2416 Famly • • • • • Up to 155Mbps operation 850nm wavelength ST style port Wave solderable Wide temperature range The OPF2416 family is a low cost solution for high speed fiber optic communications designs. The internal lensing of this receiver’s design allows optimal response for fiber sizes of 100µm and below. The receiver is comprised of a high speed, low

Contextual Info: Prelim inary specification Philips Sem iconductors Data C om m unications Products NE/SA5211 Transimpedance amplifier 180MHz P IN C O N F IG U R A T IO N D E S C R IP T IO N The NE/SA5211 is a 28kQ transim pedance, wide-band, low noise am plifier with differential outputs, particularly suitable for signal

BPF31 PIN

Abstract: RESISTOR philips 5053 Fiber-optic temperature sensor 850nm photodiode CURRENT TRANSFORMER transimpedance RF Transistor s-parameter 50Mhz 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm transimpedance amplifier SA5211 SA5211D
Contextual Info: INTEGRATED CIRCUITS SA5211 Transimpedance amplifier 180MHz Product specification Replaces datasheet NE/SA5211 of 1995 Apr 26 IC19 Data Handbook Philips Semiconductors 1998 Oct 07 Philips Semiconductors Product specification Transimpedance amplifier (180MHz)

sensor FLC 100

Abstract: G100 light sensor MAX500A Photodiode as light sensor TO18-4L
Contextual Info: iC-LQ PULSE AND AC LIGHT SENSOR Rev B2, Page Page 1/7 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë APPLICATIONS Fast response amplifier with on-chip photodiode High interference immunity due to monolithic design Active photodiode area of 1 mm² Suitable for visible and near infrared light

sensor FLC 100

Abstract: analog output Ambient light sensor G100 875NM
Contextual Info: iC-LQ PULSE AND AC LIGHT SENSOR Rev B1, Page 1/7 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° ° ° ° ° Fast response amplifier with on-chip photodiode High interference immunity due to monolithic design Active photodiode area of 1mm² Suitable for visible and near infrared light

circuit diagram wireless video transmitter and re

Abstract: GPON ont SFP 1310nm TRANSMITTER CIRCUIT DIAGRAM for CATV MAX3816 AN3812 GPON schematics GPON ONT ONU GPON ont SFP RF simple home alarm circuit diagram ONT SFP
Contextual Info: Fiber 9th Edition January 2009 Reduce risk and beat deadlines with proven reference designs ce Referen ve sa designs d time an money ASSEMBLED BOARDS EVALUATION SOFTWARE LAYOUT FILES BOARD LAYERS TEST RESULTS SCHEMATICS BILL OF MATERIALS Designs for every application

100BASE-SX

Abstract: EN60825-1 OPF5020 UV diode 100 nm to 280 nm
Contextual Info: 850nm Fast Ethernet Transceiver in 1 x 7 SMD Package Technical Data OPF5020 Features • • • • • • Small Form Factor surface mount package MT-RJ Receptacle Low cost 850 nm LED design Link distance up to 300m at 125Mbps Fully complies with the 100BASE-SX Fast

Contextual Info: INTERSIL SELECTION GUIDE INTERSIL Analog ALS Digital ALS ALS+Proximity Sensor Proximity Sensor  Q3/Q4 2011 INTERSIL SELECTION GUIDE | LIGHT SENSORS Ambient Light Sensing Intersil’s Light Sensor Family Analog