860 549 Search Results

lra911 T85 Carling Switch

Abstract: LRA211 T85 RGSCC901 TB801
Contextual Info: Worldwide Headquarters Carling Technologies, Inc., Connecticut, USA 860 793-9281, fax: (860) 793-9231 e-mail: sales@carlingtech.com www.carlingtech.com Switches and Controls Eastern U.S. and Eastern Canada: (860)586-8413, fax: (860) 586-8513 e-mail: scott.johnson@carlingtech.com

philips fr 310

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 Philips Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J

BGD802

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES

08818

Abstract: Shortform Data and Cross References
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Oct 22 Philips Semiconductors Product specification 860 MHz, 18.5 dB push-pull amplifier FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES

BGD804

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD802

CGY887B

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 NXP Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J • Excellent linearity

MCD990

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

BGD802MI

Abstract: BGD802 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802; BGD802MI 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

transistor MAR 826

Abstract: A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J
Contextual Info: APPLICATION NOTE A Wideband hybrid coupled amplifier 470 − 860 MHz with 2 balanced transistors BLV57 NCO8101 Philips Semiconductors A Wideband hybrid coupled amplifier (470 − 860 MHz) with 2 balanced transistors BLV57 CONTENTS 1 ABSTRACT 2 INTRODUCTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD902L 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Aug 17 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

BGD906

Abstract: BGD906MI DIN45004B DIN45004
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD906; BGD906MI 860 MHz, 21.5 dB gain power doubler amplifier Product specification Supersedes data of 2000 Mar 28 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler

nxp hybrid amplifier modules

Abstract: BGD904 BGD904MI DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD904; BGD904MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jan 10 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES

BGD802

Abstract: DIN45004 DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD904L 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Aug 17 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

DIN45004

Abstract: CGD914 CGD914MI DIN45004B NXP GaAs MCD990
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler

BGD802N

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD802N 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 22 2001 Nov 2 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

linear amplifier 470-860

Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
Contextual Info: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS

NCO8201

Abstract: KL-117 BLV57 NCO8101 etri fan 99
Contextual Info: APPLICATION NOTE Construction of the 470 − 860 MHz BLV57 wideband amplifier NCO8201 Philips Semiconductors Construction of the 470 − 860 MHz BLV57 wideband amplifier CONTENTS 1 INTRODUCTION 2 PRINTED CIRCUIT BOARD 3 HEATSINK 4 MECHANICAL MACHINING OF THE HEATSINK

MDA942

Abstract: application notes BGD902 MDA946
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD902; BGD902MI 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 29 2001 Nov 02 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD904; BGD904MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jan 10 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

2322-211

Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
Contextual Info: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57