870nm
Abstract: ASDL-4561 ASDL-4651-C22
Text: ASDL-4561 High Performance Infrared Emitter 870nm ChipLED Data Sheet Description Features ASDL-4561 Infrared emitter is a 0603 ChipLED SMT package that is designed for applications with low space requirements and high radiant intensity coupled with high speed. It is optimized for efficiency at emission
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ASDL-4561
870nm)
ASDL-4561
870nm
ASDL-4651-C22
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IR LED MITEL
Abstract: 1A184A
Text: PRODUCT INFORMATION 870nm 1A184A High-Performance LED The low harmonic distortion makes this device ideal for subcarrier FM video applications. Video transmission can be accomplished with minimum distortion. The double-lens optical system provides for optimum
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870nm
1A184A
IR LED MITEL
1A184A
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ASDL-4561
Abstract: ASDL-4651-C22
Text: ASDL-4561 High Performance Infrared Emitter 870nm ChipLED Data Sheet Description Features ASDL-4561 Infrared emitter is a 0603 ChipLED SMT package that is designed for applications with low space requirements and high radiant intensity coupled with high speed. It is optimized for efficiency at emission
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ASDL-4561
870nm)
ASDL-4561
870nm
AV02-0276EN
ASDL-4651-C22
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Product No: M TE8 7 6 0 MT Peak Emission Wavelength: 870nm The 870nm infrared emitter series is designed for applications requiring high accuracy and precision as well as uniform spectral emission. Custom package solutions and sorting are available.
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870nm
870nm
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BPV10NF
Abstract: 8436 TSSF4500
Text: BPV10NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters.
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BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
15-Jul-96
8436
TSSF4500
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Product No: M TE8760MT Peak Emission Wavelength: 870nm The 870nm infrared emitter series is designed for applications requiring high accuracy and precision as well as uniform spectral emission. Custom package solutions and sorting are available.
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TE8760MT
870nm
870nm
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Product No: MTE2087N Peak Emission Wavelength: 870nm The 870nm IR emitter series is designed for applications requiring high output and precise optical / mechanical axis alignment. Custom package solutions and sorting are available. FEATURES
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MTE2087N
870nm
870nm
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Untitled
Abstract: No abstract text available
Text: High Power Infrared Emitter Product No: MTE8 7 6 0 C Peak Emission Wavelength: 870nm The MTE8760C consists of a 870nm high output infrared die in a water-clear 3mm plastic molded package. Custom package solutions and sorting are available. F EATU RES AP P L IC ATIO N S
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870nm
MTE8760C
870nm
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Product No: MTE2 0 8 7 N Peak Emission Wavelength: 870nm The 870nm IR emitter series is designed for applications requiring high output and precise optical / mechanical axis alignment. Custom package solutions and sorting are available. F EATU RES
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870nm
870nm
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870nm
Abstract: KEM5001R
Text: Infrared Emitting Diode GaAlAs KEM5001R Dimensions The KEM5001R is GaAlAs infrared emitting diode [Unit : mm] that is designed for high power, low forward voltage. at emission wavelength 870nm and has a high radiant efficiency over a wide range of forward current.
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KEM5001R
KEM5001R
870nm
25ure
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Infrared-Sensor 860
Abstract: diode SR 315 IR LED 810 nm
Text: Technical Data Sheet 0603 Package Infrared Chip LED SIR19-315/TR8 Features ․Small double-end package ․Peak wavelength λp=870nm ․Package in 8mm tape on 7” diameter reel ․Compatible with infrared and vapor phase reflow solder process. ․Pb free ․RoHS refer to SMD B type SGS report
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SIR19-315/TR8
870nm
SIR19-315/TR8
NoDTS-193-193
date02-15-2006
Infrared-Sensor 860
diode SR 315
IR LED 810 nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ5 MOLD LED LAMP L870-02UP L870-02UP LN870-02UP Infrared LED Lamp L870-02UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 870nm. ♦Specifications
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L870-02UP
LN870-02UP)
L870-02UP
870nm.
870nm
100mA,
J-6512.
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L870-05DW Φ5 MOLD LED LAMP L870-05DW Infrared LED Lamp with double wire L870-05DW is an AlGaAs LED mounted on a lead frame with a clear epoxy lens, which die has offset pads and double wire bonding for high current use. On forward bias, it emits a spectral band of radiation which peaks at 870nm.
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L870-05DW
L870-05DW
870nm.
870nm
400um
400um
100mA,
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Untitled
Abstract: No abstract text available
Text: MOLD LED LAMP L870series Lead Pb Free Product-RoHS Compliant L870-_ _UP Infrared LED Lamp This series of L870-_ _UP is an AlGaAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias, it emits a high power radiation of typical 26mW with a peak wavelength at 870nm.
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L870series
L870-_
870nm.
870nm
Figure-13
Type34)
Figure-14
Type36)
Figure-15
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED φ5 MOLD LED LAMP L870-06US L870-06US LN870-06US Infrared LED Lamp L870-06US is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 870nm. ♦Specifications
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L870-06US
LN870-06US)
L870-06US
870nm.
870nm
J-6512.
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L850-40K42
Abstract: 850nm
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE LED LAMP L850-40K42 L850-40K42 stem type LED with high beam L850-40K42 is an AlGaAs LED mounted on TO-46 stem with unspherical glass ball lens, being designed for high beam uses. On forward bias it emits a spectral band of radiation, which peaks at 870nm.
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L850-40K42
L850-40K42
870nm.
850nm
J-6512.
850nm
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Untitled
Abstract: No abstract text available
Text: epitex Φ5 MOLD LED LAMP L870-03UP Opto-Device & Custom LED L870-03UP LN870-03UP Infrared LED Lamp L870-03UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 870nm. ♦Specifications
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L870-03UP
LN870-03UP)
L870-03UP
870nm.
870nm
100mA,
J-6512.
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED φ5 MOLD LED LAMP L870-01US L870-01US LN870-01US Infrared LED Lamp L870-01US is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 870nm. ♦Specifications
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L870-01US
LN870-01US)
L870-01US
870nm.
870nm
J-6512.
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Untitled
Abstract: No abstract text available
Text: High Power Infrared LED 870 nm Lead(Pb)Free Product-RoHS Compliant L870-03UP Infrared LED Lamp L870-03UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 870nm. Features
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L870-03UP
L870-03UP
870nm.
J-6512.
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L870F-04-45
Abstract: 870nm
Text: epitex Opto-Device & Custom LED MOLD LED LAMP L870F-04-45 L870F-04-45 LN870F-04-45 Infrared LED Lamp for High Current Drive L870F-04-45 is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 870nm.
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L870F-04-45
LN870F-04-45)
L870F-04-45
870nm.
450umÃ
450um
870nm
100mA,
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Untitled
Abstract: No abstract text available
Text: epitex Φ4 MOLD LED LAMP L870-42UP Opto-Device & Custom LED Lead Pb Free Product RoHS compliant L870-42UP (LN870-42UP) Infrared LED Lamp L870-42UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 870nm.
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L870-42UP
LN870-42UP)
L870-42UP
870nm.
870nm
100mA,
J-6512.
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ4 MOLD LED LAMP L870-42UP Lead Pb Free Product – RoHS Compliant L870-42UP (LN870-42UP) Infrared LED Lamp L870-42UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 870nm.
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L870-42UP
LN870-42UP)
L870-42UP
870nm.
870nm
100mA,
J-6512.
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Untitled
Abstract: No abstract text available
Text: 60 DIE LED ARRAY 1.300 CATHODE BLACK 26 AWG FEATURES • 40° beam angle 1.300 • Excellent thermal conductivity 11.0 MIN. 1.110 • Available wavelengths from 405 to 870nm • Higher temperature versions available ø.064 THRU 4 PLCS .077 ANODE (BLUE 26 AWG)
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870nm
OD-405-60-040
OD-470-60-040
OD-525-6
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Untitled
Abstract: No abstract text available
Text: OD-870W HIGH-SPEED GaAIAs IR EMITTERS FEATURES • High reliability LPE grown GaAIAs • High power output • Fast response • Wide range of linear power output • Custom packages available • Custom spectral emissions available from 780nm -870nm All surfaces are gold plated. Dimensions are nominal
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780nm
-870nm
OD-870W
100mA
100mA
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