88-108 RF AMPLIFIER Search Results

88-108 rf amplifier

Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
Contextual Info: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

inductor vk200

Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

neosid* 10k

Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

4cx20000d-9015

Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
Contextual Info: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The

4cx20000d-9015

Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an

Pallet VHF Power Amplifier TELEVISION

Abstract: Pallet VHF Power Amplifier AV600 LDU400C-R Tower Mounted Amplifiers Communications tower LDU300-R LDU300 Pallet UHF Power Amplifier LDU601C
Contextual Info: LNA & Power Amplifier Selection Guide LNA & Power Amplifiers Richardson Electronics’ RF and Microwave Communications Group designs, tests and markets low noise amplifiers, amplifier pallets, amplifier modules and rack mount amplifiers used in Digital Broadcast DVB-T , Communications, Military Wireless Infrastructure

blf578

Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
Contextual Info: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

TUI-lf-9

Abstract: ATC700B392JT50X
Contextual Info: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

BGY133

Abstract: BGY132 PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132
Contextual Info: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEATURES DESCRIPTION • Broadband VHF amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element

940 629 MOTOROLA 220

Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

gw 6203

Abstract: AU-1291 MITEQ
Contextual Info: MITEQ AU-1291 AMPLIFIER FREQUENCY MHz 0.01–500 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AU-1291 60 0.75 2.0:1 50/50 1.4 10 66 14 65 13 95 4 12 63 P1dB 62 61 11 10 60 9

Contextual Info: Advance Information: AI1115 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC IN OUT UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB linear gain average from

MRF6VP2600H

Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

MRF6VP2600H

Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

BGY36

Abstract: BGY32 BGY33 BGY35 an power amplifier 108 mhz
Contextual Info: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers DESCRIPTION PIN • 18 W output power 1 RF input • Direct operation from 12 V vehicle electrical systems.

Contextual Info: CHA1008-99F 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1008-99F is a broadband, balanced, four-stage monolithic low noise amplifier. It is designed for Millimeter-Wave Imaging applications and can be use in commercial

PD-232

Abstract: HER307 Motorola 581 MRF577 motorola 549 diode SF-11N MRF577T1 S212
Contextual Info: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices

d1047

Abstract: BGY33 d1047* Transistor BGY36 88-108 rf amplifier vHF amplifier module capacitor polyester philips BGY32 BGY35 68-88MHz
Contextual Info: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers PIN • 18 W output power • Direct operation from 1 2 V vehicle electrical systems. APPLICATIONS

SMA66-1

Contextual Info: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS

fx1115

Abstract: vHF amplifier module RF POWER TRANSISTOR NPN vhf rf amplifier module VHF Amplifier Chip power rf
Contextual Info: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145A PINNING -SOT183A The BGV145Aisa RF amplifier module, designed for use in transminers of mobile communications equipment powered by vehicles with 12.5 V battery supplies.

300w amplifier

Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
Contextual Info: RES Ltd. specializes in the design and manufacturing of FM, VHF and UHF amplifier pallets and systems for analog radio/television broadcast and digital television broadcast. All RES products, including the standard items inside, are available exclusively from Richardson Electronics.