880NM Search Results

DNP331-8

Contextual Info: DNP331-8 Through-hole IRED/φ3 Wide Distribution Type Features φ3 type, Water clear epoxy Package Product features ・Total output Power : 16mW TYP. IF=50mA ・Wide Distribution ・Lead–free soldering compatible ・RoHS compliant Peak Wavelength 880nm

OD-669

Abstract: OD-663 OD-666
Contextual Info: HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 .325 LED CHIPS .140 R REF. ONLY OD-663 FEATURES .142 .152 • Super high power output • 880nm peak emission EPOXY .084 .096 .342 R .480 1.225 1.255 .030 .426 .432 • Three chips connected in series • TO-66 header for good heat dissipation

H500

Contextual Info: DATE NO. REVISIONS BY A P P 'D OPTOELECTRONIC CHARACTERISTICS (T=25 C Parameter Test Condition Short Circuit Current H=500 Ftc 2870°K I sc Open Circuit Voltage H=500 Ftc 2870 K Voc 0.35 V R 0.50 A/W 350 PF Symbol 880nm Responsivity OV Junction Cap. Reverse Breakdowii

OD-88OWJ

Abstract: OD-880WJ 880nm
Contextual Info: OPTO DIODE CORP SSE » • bflOmfl 00001b2 S DO « O P D HI-REL GaAIAs IR EMITTERS OD-880WJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available

OD-50L

Abstract: 880nm
Contextual Info: OPTO DIODE CORP 5SE ]> • bfloma ÜQÜDIGT MTD m O P V SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50L FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very narrow optical beam

OD-669

Abstract: AT25 diode b33
Contextual Info: OPTO DIODE CORP SSE D • □□□□124 7T7 ■ O HIGH-POWER GaAIAs ILLUMINATOR P D fj» OD-669 FEATURES • High reliability LPE GaAIAs IRLEDs • Highest power output available • 880nm peak emission • Nine chips connected in series • TO-66 header with BeO substrates for

diode 16c

Abstract: OD-663
Contextual Info: OPTO DIODE CORP SSE D bûOmfl OOOOllfi MT3 • O P D ' 7 ^ ¿ / 7 - / ^ HIGH-POWER GaAIAs IRLED ILLUMINATOR OD-663 FEATURES • High reliability LPE GaAIAs IRLEDs • Super high power output • 880nm peak emission • Three chips connected in series • TO-66 header for good heat dissipation

OD-880FJ

Abstract: opto 101
Contextual Info: OPTO DIODE CORP SSE D • b f l O l T i ö ODDDlbfl TE'ì H O P D HI-REL GaAIAs IR EMITTERS — OD-880FJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available

OD-8812

Contextual Info: SSE D OPTO DIODE CORP • b ö O m f l 0QQ0130 TTO « O P D ‘/-y/- I J HIGH-POWER GaAlAs T-13/4 IR EMITTERS OD-8812 FEATURES .217 • Cost effective plastic package .055 I I • Wide angle of emission 1'00 i m MIN J _ LJ T “ • 880nm peak emission [h

PS3G07S

Contextual Info: PS3G07S Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・Photo Current : 5.0mA TYP. VCE=5V,Ee=10mW/cm2 ・ Flat Lens ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength 880nm

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS GLASS DOME .183 .186 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package

Photosensor

Abstract: QPA8259 optologic
Contextual Info: HERMETIC PAIR OPTOELECTRONICS QPA8259 .0 30 0 .7 6 ' MAX .5 00 (1 2 .7 8 ) MIN PHOTOSENSOR INFRARED LED ST1661 NOTES: 1. DIM ENSIONS ARE IN INCHES [mm], 2. TOLERANCE IS ±.0 1 0 [.25] UNLESS OTHERWISE SPECIFIED. DESCRIPTION The QPA8259 consists of an 880nm AIGaAs LED

PIN photodiode 850nm

Abstract: PIN photodiode sensitivity 850nm 850nm MID-54H19
Contextual Info: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54H19 Package Dimensions The MID-54H19 is a photodiode mounted in special Unit : mm inches dark end look plastic package and suitable for the ψ5.05 (.200) IRED (850nm/880nm) type. 5.47 (.215) 7.62 (.300)

MID-73H1C

Abstract: mid ir photodiode
Contextual Info: SIDE-LOOK PACKAGE PIN PHOTODIODE MID-73H1C Description Package Dimensions Unit : mm inches The MID-73H1C is a photodiode mounted in special dark plastic package and suitable for the IRED (850nm / 880nm) Type. 3.05 (.120) 7.5±0.12 (.295 3.00+0.120 (.118±.005)

Contextual Info: QSD2030F Plastic Silicon Photodiode Features • PIN photodiode ■ Package material and color: black epoxy ■ Package type: T-1 3/4 5mm lens diameter ■ High sensitivity ■ Wide reception angle, 40° ■ Peak sensitivity λ = 880nm ■ Daylight filter

OD-669

Contextual Info: HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 EPOXY LED CHIPS .140 R REF. ONLY .084 .096 .325 FEATURES .142 .152 .342 R 1.225 1.255 .030 .426 .432 OD-669 .480 .955 .965 • • • • • Highest power output available 880nm peak emission Nine chips connected in series

OD-880FJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FJ ANODE CASE • High reliability LPE GaAlAs IRLEDs .209 .212 .015 • High power output • 880nm peak emission .183 .186 • Hermetically sealed TO-46 package .152 .154 .100 • MIL-S-19500 screening available

QEB373

Contextual Info: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs

Contextual Info: E U AIGaAs INFRARED EMITTING DIODE F5G1 - t î Ef P - » The F5Q1 is an 880nm LED encapsulated in a clear, wide angle, sideiooker package. [-f- G re e n fri Color ¿fc- 3 I P Code T SCCÎION x -x LEAD PROFILE * Good apücaf to mechanical alignment SEATING

OD-50J

Contextual Info: HI-REL GaAlAs IR EMITTERS OD-50J FEATURES .013 • High reliability LPE GaAlAs IRLEDs R .100 • High power output • 880nm peak emission .095 .125 .130 .150 • Four wire bonds on chip corners .410 .440 6-32 .324 .246 .332 .254 • MIL-S-19500 screening available

880NM

Abstract: wavelength-880
Contextual Info: MEGA-LED L IR ILLUMINATOR 25M 880NM TV6825 Specifications Wavelength 880 nm Angle of view 60° x 40° ± 10% Range ( 0.1 Lux / F1.0) 13m-26m Power consumption 1.5A max. Voltage supply 12V DC Dimensions (WxHxD) 110 x 100 x 51 mm Environment -30°C to +40°C

Contextual Info: SFH320 DAYLIGHT FILTER SFH 320FA Silicon NPN Phototransistor _ SMTTOPLED Dimensions in inches mm FEATURES • Especially suitable for applications - SFH 320:380 to 1150 nm - SFH 320FA: 880nm • High linearity • P-LCC-2 package

Contextual Info: P H O T O S W IT C H P h o to electric S ensors R ig h tS ig h t S tandard D iffuse S tand ard O n/O ff S p ecificatio n s Typical R esp o n se C urve Field of View Emitter LED 5° Infrared 880nm Q D C o rd sets and A c cesso ries D escription D escription

Contextual Info: Infrared Emitter Product No: M TE8800N1 Peak Emission Wavelength: 880nm The MTE8800N1 consists of a 880nm high output infrared die in a water-clear 5mm plastic molded package. Custom package solutions and sorting are available. FEATURES APPLICATIONS > High Output Power