8816H Search Results

6216 static ram

Abstract: T800 equivalent
Contextual Info: Œ \ H A R R HM-8816H I S S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January 1992 Features Description • Low Standby Supply C u rre n t.800|iA • Low Operating Supply C urrent. 400mA

EDH8808C

Abstract: EDH8808
Contextual Info: Electronic Designs Inc. 8816HCL-55/85/10 MILITARY 16K x 8 SRAM CM OS Vv7 ì J The ED H 8816H C L 16K x 8) is part o f a new fam ily o f High Speed Static RAM devices developed b y E lectronic Designs Inc. The 8816HC L uses the advanced EDI M EM O R YPACK packaging conce p t w hich m o un ts several LC C

Contextual Info: a H M -8816H -8 H a r r is 16K x 8 High Speed Asynchronous CMOS Static RAM Module June 1989 P in o u t Features T O P V IE W • Low Standby Supply Current . 8 0 0 nA 28] VCC n c [T A12 Qf 27] W • W ide Operating T em perature R a n g e . -5 5 ° C to + 1 2 5 °C

6216 static ram

Abstract: 6216 ram
Contextual Info: m U U HM-8816H HARRIS S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January1992 Features Description The HM-8816H is a high speed, asynchronous CMOS static RAM module, based on a multilayer, co-fired, dual-in-line ceramic substrate and eight HM-65262 16K x 1 asynchro­

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers

w16 72

Abstract: DES Encryption TMS320
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

D844 voltage regulator

Abstract: 9427h 9216h
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

d2f3

Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
Contextual Info: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

mmc 4050

Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

D438 F28

Abstract: D844 voltage regulator D880 1408 9618H 7410 40E4 BE12h F21Ah 8e18h K D882 Y 139 codebook transistor
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

HM-65262

Abstract: HM-8816H HM-8816H-8 HM-8816H-9
Contextual Info: 3 H A R R I S H M - 8 8 1 6 H 16K x 8 High Speed Asynchronous CMOS Static RAM Module Features Pinout • Low Standby Sup ply C u rre n T O P VIEW • Low O p erating S up ply C u r re n A

D880 TRANSISTOR

Abstract: c914 GSM modem M10 transistor D998 D880 D880 y D998 TRANSISTOR datasheet d998 transistor D992 d998
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

28F320J3A

Abstract: AN1372 TSOP56 Same Functionality Pinout M58LW032A
Contextual Info: AN1372 APPLICATION NOTE How to Use M58LW032A as Replacement for 28F320J3A in an Asynchronous Environment CONTENTS • INTRODUCTION ■ ELECTRONIC SIGNATURE M58LW032A ■ POWER SUPPLY ■ PACKAGES and PINOUT/ BALLOUT COMPARISON ■ BLOCK ORGANIZATION ■

Contextual Info: H M -8 8 1 6 H -8 £ H A R R I S 16 K x 8 High Speed Asynchronous June 1989 CMOS Static RAM Module P in o u t Features T O P V IE W • Low Standby Supply C urrent . 8 0 0 jjA • Low Operating Supply C u rre n t. 400m A

D844 voltage regulator

Abstract: DES Encryption TMS320 tms320 sd D882 TRANSISTOR circuit example AA19 OMAP5912 GSM modem M10 d438 transistor AN 7818 voltage regulator K d998 transistor
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

D844 voltage regulator

Abstract: K d998 transistor j 5804 f11 9405h DES Encryption TMS320
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

BE06

Abstract: CC08h
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

M58LW032

Abstract: M58LW032A TSOP56
Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations ■ – VDDQ = 1.8V to VDD for I/O Buffers

DB42

Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include