8831 TRANSISTOR Search Results

Contextual Info: Rev.5.0_01 STEP-UP, FOR LCD BIAS SUPPLY, 1-CHANNEL SWITCHING REGULATOR S-8330/8331 Series The S-8330/8331 Series is a CMOS PWM-control step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, a power MOS FET for S-8330

35CE10AX

Abstract: multi cell liion charger li-ion battery charger schematic LTC4009 IHLP2525CZER100M01 LTC4009-2 TMM-103-02-L-D cmdsh-3tr CUI-STACK CUI-PJ002A LTC4009-1
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1104 MULTI CELL LI-ION BATTERY CHARGER BOARD LTC4009-2 DESCRIPTION Demonstration circuit 1104 is a single-battery standalone charge controller with built-in charge termination featuring the LTC4009-2. The input voltage is 13.5 to

Contextual Info: H a r r is 2N7277D, 2N7277R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM234 D, R, H November 1994 i^ 7 2 7 7 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 7A, 250V, RDS(on) = 0.70ft TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

RC4227

Contextual Info: Raytheon Electronics Semiconductor Division ANALOG RC4227 Dual P recision O p eratio n al A m plifier Features • Very low noise Spectral noise density - 3.8 nV/VHz 1/F noise com er frequency - 2.7 Hz • Very low VOS drift - 0.3 iV/Mo; 0.3 \l V/°C • High gain - 500 V/mV

Contextual Info: H a rris S E M I C O N D U C T O R d2N 7274D, 2N 7274R 21^ 7 2 7 4 H REGISTRATION PENDING Currently Available as FRM230 D, R, H November 1994 R a d ia tio n H a rd e n e d N -C ha nne l P o w e r M O SFETs Package Features • 8A, 200V, RDS(on) = 0 .5 0 Q

RC4136

Abstract: lm 324 circuit diagram RC4136N voltage follower lm 741 741 dip-14 raytheon
Contextual Info: Raytheon Electronics Semiconductor Division R C 4 1 3 6 G eneral P erfo rm an ce Quad 741 O perational Am plifier Features • • • • • • • • Unity gain bandwidth - 3 MHz Short circuit protection No frequency com pensation required No latch-up

Contextual Info: HA R R I S S E M I C O N D SE C T O R HARRIS SÔE D • 4 3 G 2271 D Ü 4 5 bflO 205 H H A S 2N7273D, 2N7273H 2N7273H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS130 D, R, H Radiation Hardened N-Channel Power MOSFETs January 1993

Contextual Info: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)

ADG201BP

Abstract: ADG201-series ADG201CJ ADG201AP DG201 314S adg201c ADG201 adg201b
Contextual Info: ANALOG DEVICES DI CMOS Protected Quad SPST Analog Switch FEATURES Latch-Proof Dl CM OS Overvoltage Proof to 25V Beyond Supplies Superior DG201 Replacement Break-Before Make Switching Action Low R o n : 8QÌ2 Low Power Dissipation: 30mW max Direct T T L or CM OS Interfacing

2N7002-SOT23

Abstract: LTC4150 LTC4150CMS 2N7002 equivalent
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 756 COULOMB COUNTER/BATTERY GAS GAUGE LTC4150 DESCRIPTION Demonstration Circuit 756 is a 2.7V to 9V battery gas gauge and coulomb counter. The LTC4150 measures battery depletion and charging by monitoring current

Rad hard MOSFETS in Harris

Abstract: 2E12 3E12 FRE460D FRE460H FRE460R EL41
Contextual Info: FRE460D, FRE460R, FRE460H 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 12A, 500V, RDS on = 0.410£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: tyvvys S FRE264D, FRE264R, FRE264H Semiconductor y y 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 250V, RDS on = 0.130S1 TO-258AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts •

4227G

Contextual Info: F A I R C H I L D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC4227 Dual P r e c i s i o n O p e r a t i o n a l A m p l i f i e r Features • Very low noise Spectral noise density - 3.8 nV/VHz 1/F noise corner frequency - 2.7 Hz • Very low VOS drift - 0.3 ^iV/Mo; 0.3 ^iV/°C

transistor manual substitution

Abstract: 0838-1X1T-W7 0838-1X1T LTC4274 MAGJACK application pcb DC1567 DC1567A Single Port Midspan Power Injector user manual all transistor manual substitution Diode Rectifier S1B-E3 1A, 100V, SMA
Contextual Info: DEMO MANUAL DC1567A LTC4274: Single Port IEEE802.3at PSE DESCRIPTION Demonstration circuit 1567A features the LTC4274, a single power sourcing equipment PSE controller designed for use in IEEE 802.3 Type 1 and Type 2 (high power) compliant Power over Ethernet (PoE) systems. The LTC4274 is

4227G

Abstract: 741 opamp OP-27 RC4227 RC4227GN
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4227 Dual P r e c i s i o n O p e r a t i o n a l A m p l i f i e r Features • Very low noise Spectral noise density - 3.8 nV/VHz 1/F noise corner frequency - 2.7 Hz • Very low VOS drift - 0.3 jiV/Mo; 0.3 ^V / C

Contextual Info: FRS9240D, FRS9240R, FRS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735£i TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)

RC4227

Contextual Info: F A I R C H I L D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC4227 Dual P r e c i s i o n O p e r a t i o n a l A m p l i f i e r Features • Very low noise Spectral noise density - 3.8 nV/VHz 1/F noise corner frequency - 2.7 Hz • Very low VOS drift - 0.3 ^iV/Mo; 0.3 ^iV/ C

PIN DIAGRAM of LM 324

Abstract: IC RC4136 voltage follower lm 741 8 pin ic lm324 comparator
Contextual Info: F A IR C H IL D www.fairchildsemi.com Ml C O N D U C T O R RC4136 G e n e r a l P e r f o r m a n c e Q u a d 741 Operational Amplifier Features • • • • Unity gain bandwidth - 3 MHz Short circuit protection No frequency compensation required No latch-up

Contextual Info: S E M IC O N D U C T O R w w w .fairchildsem i.com tm RC4136 General P e r f or manc e Quad 741 Operat i onal Ampl i f i er Features • • • • • • • • Unity gain bandwidth - 3 MHz Short circuit protection No frequency compensation required No latch-up

741 opamp

Abstract: RC4227 RC4227GN OP-27
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4227 Dual P r e c i s i o n O p e r a t i o n a l A m p l i f i e r Features • Very low noise Spectral noise density - 3.8 nV/VHz 1/F noise corner frequency - 2.7 Hz • Very low VOS drift - 0.3 jiV/Mo; 0.3 ^V/ C

Contextual Info: F A I R C H I L D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC4227 Dual P r e c i s i o n O p e r a t i o n a l A m p l i f i e r Features • Very low noise Spectral noise density - 3.8 nV/VHz 1/F noise corner frequency - 2.7 Hz • Very low VOS drift - 0.3 ^iV/Mo; 0.3 ^iV/ C

Lm324 window discriminator

Abstract: rc41360 LM324 PIN DIAGRAM Lm324 window comparator 741 operational filter 741s constant current load using lm324 rc4136n RC4136 CIRCUIT RC4136N
Contextual Info: FAIRCHILD www.fairchildsemi.com M lC O N D U C T O R R C 4 1 36 G e n e r a l P e r f o r m a n c e Q u a d 741 Operational Amplifier Features • • • • Large common mode and differential voltage ranges Low power consumption Parameter tracking over temperature range

transistor z4 30

Abstract: pin diagram of 741 op-amp RC4227GN transistor R1d OP-07 OP-27 RC4227 air conditioning thermoelectric
Contextual Info: Electronics Semiconductor Division RC4227 Dual Precision Operational Amplifier Features • Very low noise Spectral noise density – 3.8 nV/√Hz 1/F noise corner frequency – 2.7 Hz • Very low VOS drift – 0.3 µV/Mo; 0.3 µV/˚C • High gain – 500 V/mV