8834A Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs Chip Form Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

ASM3161

Abstract: tcon oz9950 "LED Driver" HIMAX asm3166 T-con hx8819 CG7002 OZ9* inverter controller digital photo frame
Contextual Info: Ceramate Digital Photo Frame Block SDRAM NAND Flash Unity OPTO Himax IRM MIM3388 SERIES MIM538B SERIES T-CON HX8817/8834-A ASMedia Bluetooth ESD Protection T-CON HX8819/8834-A CDA12T1G CPT Digital Panel Himax Analogic e-Conn Card Reader Analog Panel Himax

AME8833

Abstract: AME8834 8834-H OUTPUT 3.3V PACKAGE SC-70
Contextual Info: AME, Inc. AME8833/8834 n General Description High PSRR, 150mA CMOS LDO n Functional Block Diagram The AME8833 family of positive, linear regulators feature low quiescent current 50µA typ. low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications. The ultra-small SC-70 package is attractive for "Pocket" and

AME8834AEIVADJ

Abstract: AME8833 AME8834 sot258-1
Contextual Info: AME, Inc. High PSRR, 150mA CMOS LDO AME8833/8834 n General Description n Functional Block Diagram The AME8833 family of positive, linear regulators feature low quiescent current 50µA typ. low dropout voltage and excellent PSRR, thus making them ideal for

AME8833

Abstract: AME8834 8834-A
Contextual Info: AME, Inc. High PSRR, 150mA CMOS LDO AME8833/8834 n General Description n Functional Block Diagram The AME8833 family of positive, linear regulators feature low quiescent current 50µA typ. low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications. The ultra-small SC-70 package is attractive for "Pocket" and

Contextual Info: AME, Inc. AME8833/8834 n General Description High PSRR, 150mA CMOS LDO n Functional Block Diagram The AME8833 family of positive, linear regulators feature low quiescent current 50µA typ. low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications. The ultra-small SC-70 package is attractive for "Pocket" and

Contextual Info: TOSHIBA M ICRO W AVE PO W ER MICROWAVE SEMICONDUCTOR GaAs FET JS8834-AS TECHNICAL DATA FEATURES: • MEDIUM POWER SUITABLE FOR C-BAND AMPLIFIER p1dB = 21 dBm at f = 8 GHz ION IMPLANTATION ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz CHIP FORM RF P E R F O R M A N C E S P E C I F I C A T I O N S Ta = 2 5 ° C

SK100 transistor

Abstract: C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100
Contextual Info: Cooper Crouse-Hinds Cross Reference Competitor: Adalet Competitor Catalog Number XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 XFC-224 ECGJH124 XFC-227 ECGJH127 XFC-230 ECGJH130 XFC-233 ECGJH133 XFC-236 ECGJH136 XFC-24 ECGJH14