8C DZ Search Results

8R86

Abstract: MBG6 KZL 99 PED relay
Contextual Info: @>K8 :JIECEIAK= G=B:M >QN]^[Q\ - ?8C lpbm\abg` \ZiZ[bebmr - Gqm^g]^] m^fi^kZmnk^ kZg`^ ni mh 9:= - Wbma mkZglb^gm lniik^llbhg k^lblmhk - EhgmZ\m `ZiB 86>ff - 9 Hhkf C \hgmZ\m ZkkZg`^f^gm IaZUONV :ZZVUON]UYX\ - WZla mb`am Zg] ]nlm ikhm^\m^] mri^l ZoZbeZ[e^

B56B

Contextual Info: ;AH,-07,/ =:>:2DEB6 9:89 @?G6B B6<2I 7LJVWTLU w>@: *Cdpvgijkgm S if r FJ>G8=>B< 86D67>@>G>:F S /,/0 6B9 u,/0 8CB;><HE6G>CBF S j|2 9>:@:8GE>8 FGE:B<G= 8C>@ GC 8CBG68GF w>@: *Cdp.kffigfnl S y:6IL @C69 HD GC mkff2r S t@6FF w >BFH@6G>CB w>@: *Cdpt-tfhffgffgojk

Contextual Info: ?8A=3G@M< :FLGH8A :8C ?@>? ;@<A<:HF@: GHF<C>H? ?<FB<H@:8AAL G<8A<; F<A8L ?=6544 EZVijgZh / C^ZaZXig^X higZc\i] XVc WZ 5644 Rg2b2h / IdVY XVc WZ 9@ 6<RY2X2 / G^\] VbW^Zci Veea^XVW^a^in / @aa bZiVa lZaYZY XdchigjXi^dc / GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg

Contextual Info: MITSUBISHI MICROCOMPUTERS M37754M8C-XXXGP, M37754M8C-XXXHP M37754S4CGP, M37754S4CHP \v«*s ^ e V a<a< SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER • Instruction execution tim e DESCRIPTION The M 37754M 8C -XXXG P is a single-chip m icrocom puter designed The fastest instruction at 40 MHz fre q u e n c y . 100 ns

MBB1416

Abstract: MB81416-12 MBB1416-15 81416 MB81416 MB81416-10 MB81416-15 MB81416-16 MB8141612
Contextual Info: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS M O S M M e m DE 3 7 4 T 7 b 5 ODDEfibS 1 | . M 8C 0 2 6 6 5 DJ-'Y¿-2.3-/y FU JITSU o r ie s B 8 1 4 1 6 - 1 0 , M B 8 1 4 1 6 - 1 2 , M B 8 1 4 1 6 - 1 5 NMOS 65,536-Bit Dynamic Random Access Memory

sh3g

Contextual Info: .{BNHXK EYKUUOSM ?TYTW aAWJKWOSM OSLTWRHYOTS y3z 5TZSYKW b=aa][USe[`_ ^`VW] < LZSXe ejaW. D`]]`h dZSXe ejaW. LZSXe ejaW->cS\W Tf[]e/[_ ejaW = 3 E . - +o, > LeS_VScV ejaW >cS\W Tf[]e/[_ ejaW L LeS_VScV h[c[_Y+Iae[`_, P[cW U`_WUe[`_ JW_eSY`_ h[c[_Y +o, G`e`c dZSXe

Amdasm

Abstract: AM9080A 74ls04 hex inverter gates u7172 U10304 BC 409C NS4F am9080 74LS04 Hex Inverter definition am29761
Contextual Info: t o -<p ^ & m na iZ \n lílílí _ _ a a a a a a a a a a ; a a a a a a a a a a a a _ _ a a a a a a a a ;\a n ftn n ja a a a a n n a n a n a aaaa n n a n a a a a n e n a z t í a s aaa n a n n^nr a a a a a n a a a a n a a a a - - : '•

3DA8

Abstract: A4027
Contextual Info: 643- 6756 <;B3= 8/?167:5 =38/C 4GDRSPGQ S w0C278=6 A4;0H S dbbn BF8C278=6 20?018;8CH S ~CA>=6 A4B8BC0=24 018;8CH C> B7>2: Z E81A0C8>= S u40EH ;>03 D? C> gg`f:,n S f:, 384;42CA82 BCA4=6C7 [14CF44= 2>8; 0=3 2>=C02CB\ S r=E8A>=<4=C0; 5A84=3;H ?A>3D2C [}>u~ 2><?;80=C\

Contextual Info: * +, (-./ 0 !& ( 1- 234 0 & 5 + 1-67 0 8 5 9 : 5 * 8 < % < > * * : 8 %* (-.?@A 8 : 8 8 %* 8 5 ;B C 8D8 8 8 # 9 8 *< %9 # * 8 E ?AF 0 &&G; I 8) ; 1J! I 8) 9 1 * 8 K <( 5; I L # M 8 < : B # ; :N ; 5 % ( * ; = # 9 (-.?@A : 8 = 5 ;B , ; %H * &&G; , < * 9 8; 1J!

A4027

Abstract: B834 C4278 B834A E81A 20B45 42C8 NA4B D314 U40E
Contextual Info: 643- 6756 <;B3= 8/?167:5 =38/C 4GDRSPGQ S w0C278=6 A4;0H S dbbn BF8C278=6 20?018;8CH S ~CA>=6 A4B8BC0=24 018;8CH C> B7>2: Z E81A0C8>= S u40EH ;>03 D? C> gg`f:,n S f:, 384;42CA82 BCA4=6C7 [14CF44= 2>8; 0=3 2>=C02CB\ S r=E8A>=<4=C0; 5A84=3;H ?A>3D2C [}>u~ 2><?;80=C\

Contextual Info: 1234  689A9A9CC96 BC9D6DC 1!"#$%&$5# &$$'986789ABCCD9A68679AC6CA986D97CC6 EA8CC 1DFA69 9 F6*C 1!"#$%&$5# 56789ABCCD9A68679AC6CA986D97CC6

MAA436

Abstract: schemat maa436 HAM36 tyrystor schemat rezystor TERMISTOR NAA436 ntc schema
Contextual Info: Regulacja fazowa mocy z ukladem MAA436 Sygnat steruj^cy koricowka 12 przez w tom ik T il, T12 taduje wst?pnie kondensator C9 (0,01 —0,1 /iF) do poziom u napifcia piedestahi, ktory zalezy od wartosci elementow dzielnika zewn?trznego RA i RB (R A+ R B= 10 — 100 kfi). Pr^d tadowania jest ograniczony rezystoreni R6. Kondensator C9 jest

R4553

Contextual Info: 1234  689A9A9CC96 BC9D6DC 1!"#$%#5& %##'986789ABCCD9A68679AC6CA986D97CC6 EA8CC 1DFA69 9 F6*C 1!"#$%#5& 56789ABCCD9A68679AC6CA986D97CC6

f2jgl

Abstract: LM 238 Y 398Z ZCA7
Contextual Info: LcW`QVW[U I\cS^ La]]Ye LcW`QVW[U I\cS^ La]]Ye cW`V ZW[WZWfSR [\W_S O[R ^W]]YS .:/ <\a[`S^ g?SO`a^S_ Wp8-6?./= 9@/<-?<</8> :<9>/->398X 9?>:?> =29<>Y-3<-?3> :<9>/->398X 9@/<2/+>381 +8. 9@/<@96>+1/ :<9>/->398 -3<-?3>=UwuhY\ca[]\\V Ww>+8.+<. 98 =+0/>C plj b\ea\X plj a\]cd

2SK19GR

Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

tomtom one xl

Abstract: tomtom xl
Contextual Info: L8C201/202/203/204 512/1K/2K/4K x 9-bit A s y n c h ro n o u s FIFO FEATURES □ First-In/First-Out FIFO using Dual-Port Memory □ Advanced CMOS Technology □ High Speed — to 10 ns Access Time □ Asynchronous and Simultaneous Read and Write □ Fully Expandable by both Word

K2134

Abstract: IN3344 IN3324 1N4564 1N3305 E5450 1N2804 4556 AD 8 PIN
Contextual Info: 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549thru 1N4556 1N4557thru 1N4564 6.8V thru 200V C a se 54 (^ ) M O T O R O L A 6.8V thru 200V (C a s e 58) 3.9V thru 7.5V (C a se 58) ZENER DIODES 3.9V thru 7.5V (C a s e 54) U n its are a v a ila b le w ith an od e-to *case and cath o d e -to -case

Contextual Info: SK50GD126T =' T BS UIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =V T BS UI <I =V T @SX UI <I[; SEMITOP 4 IGBT Module .5'( @BXX Q YO J =' T ZX UI SB J @XX J ¥ BX Q =V T @BS UI @X `' =' T BS UI YB J =' T ZX UI aY J @XX

Contextual Info: 234567489AB6CDEF87D6 E7F32  1 123456789ABCDEAF 3A488FD3BDED ABDED BBBDEB1BBDEA3B 224A !AFA3D4B8F723DE82F "ED #$B723B%D3826$B8F%A3EA3BD48 DE82F&B"A8 2F6 E23$B'ADEB$8F#$B38%A3$BDFB$AF$23$B8F 46A& 'A$ABD3AB2F4BEA 'F8 D4BDED

106V

Abstract: AN6869 5C316
Contextual Info: AN6869 A /D and D/A CONVERTERS AN6869 H igh-Speed 10-bit D /A C onverter • Outline Unit : mm T h e A N 6869 is a high-speed and low p o w er d issip atio n 10-bit ‘ b ip o lar IC su ita b le fo r D /A co n v ersio n up to video signal band. ■ Features

WM-52

Contextual Info: MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM55DZ/CZ-M,-H Average on-state current 55A V r r m Repetitive peak reverse voltage 400/800V V d rm Repetitive peak off-state voltage 400/800V DOUBLEARMS Insulated Type UL Recognized

L3003

Abstract: 1E49 BD 3445 E CD108 U701 CD335 CD4411 14A2 36B1 CE144
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LCD — U701 M52TF— 1 REV, 1ÛD 10.Q3Ï1 MAX. E.C.N. D NUMBER AND REVISION COMMENTS DATE A E.C.N, # 1 1 1 3 3 . 6.1 0 .0 4 B E.C.N. # 1 1 1 4 0 . 6 .2 4 .0 4 C E.C.N. # 1 1 2 0 3 . 12 .2 B .0 4 D E.C.N. # 1 1 1 4 8 .

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

CX20052A

Abstract: CX20052 P-24P-0 MC10116 application MC10116 CXA1008P CXA1009P cxa1006p mm5870 application notes mc10116
Contextual Info: CXA1008P/1009P SONY. High-speed Sample and Hold Amplifiers Description CXA1008P/1009P are bipolar IC’s developed for the purpose of sample holding video signals and other signals at high-speed. Features •Maximum sampling frequency CXA1008P CXA1009P •Linearity