8K MARKING Search Results

p20d

Abstract: CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H
Contextual Info: Qualification Report March, 1992 QTP 91296 Version 1.0 64K EPROM FAMILY, 0.8µ MARKETING PART NUMBER DEVICE DESCRIPTION CY7C261 8K x 8 POWER-SWITCHED CY7C263 8K x 8 CY7C264 8K x 8 600-MIL PKG CY7C266 8K x 8 POWER-SWITCHED EPROM PINOUT CY7C269 8K x 8 REGISTERED DIAGNOSTIC

Hitachi PIX-8144

Abstract: Hitachi PIX 8144 Pix-8144 PIX 8144 hitachi 8144 CY7C025-AC dual port 16 SRAM PLCC CY7C024 CY7C0241 CY7C0251
Contextual Info: Qualification Report QTP 96091/96393, Version 2.0 September 1996 Dual Port SRAM - R28 Technology, 6% Shrink CY7C0251 8K x 18 Dual Port SRAM CY7C025 8K x 16 Dual Port SRAM CY7C0241 4K x 18 Dual Port SRAM CY7C024 4K x 16 Dual Port SRAM CY7C145 8K x 9 Dual Port SRAM

dual port SRAM PLCC

Abstract: CY7C133 CY7C138 CY7C139 CY7C143 CY7C144 CY7C145 CY7C016 CY7C024 CY7C0241
Contextual Info: Qualification Report May 1996, QTP# 95226, Version 1.0 Dual Port SRAM - R28 Technology Thin Quad Flat Pack Package CY7C0251 8K x 18 Dual Port SRAM CY7C025 8K x 16 Dual Port SRAM CY7C0241 4K x 18 Dual Port SRAM CY7C024 4K x 16 Dual Port SRAM CY7C145 8K x 9 Dual Port SRAM

8k sot 23 marking

Abstract: MMBZ5235B
Contextual Info: SEMICONDUCTOR MMBZ5235B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8K No. 1 Item Marking Device Mark 8K MMBZ5235B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

LT 543 IC pin diagram

Abstract: IC SRAM 8K X 8 microprocessor 80386 pin out diagram
Contextual Info: M IC R O N 1 MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM T CACHE DATA SRAM SINGLE 8K x18 SRAM, DUAL4 K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

United Technologies Microelectronics

Contextual Info: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet W IUNITED TECHNOLOGIES MICROELECTRONICS ICENTER June 1996 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet September 2000 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet Dec. 1997 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

MARKING A5

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Advanced Data Sheet March 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet December 1998 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES G Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer G QML Q & V compliant part - AC and DC testing at factory

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES G Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer G 35ns and 45ns maximum address access time -55 oC to

sm2 5v

Abstract: 80C51 87C652
Contextual Info: INTEGRATED CIRCUITS 87C652 80C51 8-bit microcontroller 8K/256 OTP, I2C Product specification Supersedes data of 1998 Jan 19 IC20 Data Handbook Philips Semiconductors 1998 May 01 Philips Semiconductors Product specification 80C51 8-bit microcontroller 8K/256 OTP, I2C

Contextual Info: X28HC64 64k, 8k x 8-Bit Data Sheet August 28, 2009 5 Volt, Byte Alterable EEPROM Features The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile

8Kx8 28F64

Abstract: 28F64-35
Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC

8Kx8 28F64

Abstract: RADHA
Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC

X28HC64P-12

Abstract: EEPROM X28HC64P-12 X28HC64PI-12 X28HC64SZ-70 FN8109 X28HC64 X28HC64J-70 X28HC64J-90 X28HC64JI-90 X28HC64JIZ-70
Contextual Info: X28HC64 64k, 8k x 8-Bit Data Sheet August 28, 2009 5 Volt, Byte Alterable EEPROM Features The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile

COP8ANE9EMW7

Abstract: marking T2B x00E
Contextual Info: April 2002 COP8AME9/COP8ANE9 8-Bit CMOS Flash Microcontroller with 8k Memory, Dual Op Amps, Virtual EEPROM, Temperature Sensor, 10-Bit A/D and Brownout Reset General Description The COP8AME9/ANE9 Flash microcontrollers are highly integrated COP8 Feature core devices, with 8k Flash