8KX8 EEPROM Search Results

80C31 instruction set

Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
Contextual Info: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single

UPAK

Abstract: static ram 8KX8 sram 8kx8 memory map
Contextual Info: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules

Contextual Info: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package

EEPROM

Abstract: 24LC65 24LC65-P 8Kx8 EEPROM
Contextual Info: 970922 01 ELFA artikelnr. 73-656-38 24LC65/P 8kx8 EEPROM SIDA: 1/11 73-656-46 24LC65/SM 8kx8 EEPROM 970922 01 SIDA: 2/11 970922 01 SIDA: 3/11 970922 01 SIDA: 4/11 970922 01 SIDA: 5/11 970922 01 SIDA: 6/11 970922 01 SIDA: 7/11 970922 01 SIDA: 8/11 970922 01

Hitachi 1024k*8 SRAM

Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Contextual Info: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8

25C64VI

Abstract: 25C64V
Contextual Info: CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C64 features a 64-byte page

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Q4010

Contextual Info: bq4010/bq401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is

Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is

25C64li

Abstract: 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 CAT25C64 25C64V
Contextual Info: Not recommended for new designs, replace with CAT25640 CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

bq4010

Abstract: bq4010Y bq4010YMA-85N
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

bq4010

Abstract: bq4010MA bq4010Y bq4010YMA
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the

100uF capacitor

Abstract: 12C68 DS1225Y STK12C68
Contextual Info: Using the STK12C68 Using the SIMTEK STK12C68 AutoStore 8K x 8 High Performance Nonvolatile Static RAM Simtek Corporation’s STK12C68 is a fast static RAM backed by a nonvolatile EEPROM shadow memory in an industry standard 28 pin package. The SRAM portion of memory operates similarly to other 8Kx8 fast

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

25640 AN

Abstract: 25640 AEC-Q100 CAT25640 MO-229 MS-001
Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is

TTE24C

Contextual Info: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and

25640F

Abstract: CAT25
Contextual Info: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the