8KX8-BIT CMOS SRAM Search Results

EDI8808CB

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.

Contextual Info: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.

EDI8808CB

Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
Contextual Info: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow

A3738

Abstract: CA1023 8kx8 sram
Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns

Contextual Info: KM6264B Family CMOS SRAM 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6264B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges

KM6264

Abstract: KM6264B KM6264BLP-7 28-SOP 8KX8-Bit CMOS SRAM km6264blg-10 KM6264BLG-10L CC02V
Contextual Info: CMOS SRAM KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : CMOS • Organization : 8K x 8 • Power Supply Voltage : Single 5V ± 10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100, 120 ns Max. • Low Power Dissipation Standby (CMOS): 10nW(Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) • Single 5V±10% Power Supply

KM6264BL-10

Abstract: KM6264BL-10L KM6264BL-12 DIP-600B KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10
Contextual Info: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,1 0 0 , 120 ns Max. • Low Power Dissipation Standby (CMOS): 10|iW (Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) •Single 5V±10% Power Supply

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

bq4010Y-xxxN

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Q4010

Contextual Info: bq4010/bq401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

PACKAGE-600MIL

Abstract: 8KX8-Bit CMOS SRAM 192x8
Contextual Info: HYUNDAI ELECTRONICS sie t> m a s o f i a 0001157 bse h h y n k •H yundai SEMICONDUCTOR HY6264A 8KX8-Bit C M O S SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS, static RAM fabrica­ ted using a twin tub CMOS process technolo­

Contextual Info: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy

bq4010

Abstract: bq4010Y bq4010YMA-85N
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

bq4010

Abstract: bq4010MA bq4010Y bq4010YMA
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq 4010/bq 401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

bq4010

Abstract: bq4010Y
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility