8MMX20MM Search Results

BS62LV2006

Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
Contextual Info: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

TSOP32 pad

Abstract: bs62lv1027 R0201-BS62LV1027
Contextual Info: Very Low Power CMOS SRAM 128K X 8 bit BS62LV1027 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. at 55ns

BS62LV1025

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1025 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current

Contextual Info: CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches –Active: 30 mA max CMOS/TTL levels

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

ac 1084

Contextual Info: H EE GEN FR ALO CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory LE A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

28C010

Abstract: 28c010-15 1N914 CAT28C010
Contextual Info: Advanced Information CAT28C010 128K x 8 1024K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120 ns ■ Single 5V ■ Automatic Page Write Operation: ± 10% Supply –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: ■ End of Write Detection:

Contextual Info: Licensed Intel second source CAT28F020 2 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 70/90/120 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase – Active: 30 mA max CMOS/TTL levels

Contextual Info: CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels

LY621024PL-70LL

Abstract: LY621024PL
Contextual Info:  LY621024 128K X 8 BIT LOW POWER CMOS SRAM Rev. 1.8 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Issue Date Initial Issue Jul.25.2004 Revised sym. b of 32 pin 450mil SOP package outline dimension Jan.17.2007

BS62LV1023

Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

28C513

Abstract: 28C512 CAT28C512 1N914 CAT28C513
Contextual Info: H EE GEN FR ALO CAT28C512/513 512K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max.

28F512

Abstract: ac 1084 1N914 CAT28F512
Contextual Info: H CAT28F512 EE GEN FR ALO 512K-Bit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

Contextual Info: MX66X1024 mA. Super Low Power 128k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8V cc/0.2Vcc 5.5V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5 V Super low power consumption - 5V operation 60mA (Max.) write current

Contextual Info: mA FEATURES MX66U1024 Super Low Power 128k x 8 CMOS SRAM QJ Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 2V - TTL Input level (3V/0V) 4.5 V to 2V □ Super low power consumption - 5V operation 60mA (Max.) write current 20mA (Max.) read current

BS62LV2003

Abstract: BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC BS62LV2003TI TSOP-32
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2003 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current

BS62UV2001

Abstract: BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI
Contextual Info: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62UV2001 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 15mA Max. operating current I- grade : 20mA (Max.) operating current

CAT28LV64

Abstract: 28LV64 28LV64-25
Contextual Info: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:

CAT28F010

Abstract: 28F010-70 1N914 28F010-12 Nippon capacitors
Contextual Info: CAT28F010 CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem- ■ Fast Read Access Time: 70/90/120 ns perature Ranges ■ Low Power CMOS Dissipation: ■ On-Chip Address and Data Latches

ac 1084

Abstract: 28F512 CAT28F512 200 ns 1N914 CAT28F512
Contextual Info: H CAT28F512 EE GEN FR ALO 512K-Bit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase

MX29LV040C

Abstract: MX29LV040CT2I-70G MX29LV040CTC-70G MX29LV040CQI-70G MX29LV040CQC-55Q architecture in 4289 MX29LV040 MX29LV040CQI-55Q MX29LV040CTI-70G 555H
Contextual Info: MX29LV040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • • • • • • • • Extended single - supply voltage range 2.7V to 3.6V 524,288 x 8 only Single power supply operation - 3.0V only operation for read, erase and program operation

R1LP0108ESA-7SR

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher