8MX16X4 Search Results

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any

is42s16320

Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

Contextual Info: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

IS42S16320D-7TLI

Abstract: IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400
Contextual Info: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 PRELIMINARY INFORMATION JUNE 2011 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS45S16320B

Contextual Info: IS45S16320B 32Meg x 16 512-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION OCTOBER 2007 • Clock frequency: 133 MHz OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and

Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge DECEMBER 2011 OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

IS42S86400B

Abstract: IS42S16320B is42s86400
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 OCTOBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge

IS45S16320B-7TLA2

Abstract: IS42S86400B IS42S16320B IS45S16320B
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 APRIL 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge

Contextual Info: IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM APRIL 2014 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

is42s16320

Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge

Contextual Info: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

46LR32320B

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: IS43/46DR86400C IS43/46DR16320C 64Mx8, 32Mx16 DDR2 DRAM MARCH 2013 FEATURES DESCRIPTION •฀ VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V •฀ JEDEC standard 1.8V I/O SSTL_18-compatible •฀ Double data rate interface: two data transfers per clock cycle •฀ Differential data strobe (DQS, DQS)

ARC processor ISA ERET register

Abstract: RC32438 79RC32438 DL1210 uart specification IDT CV 184 0x111d pcim 2014 be561 16MX8X4 ddr
Contextual Info: IDT Interprise™ 79RC32438 Integrated Communications Processor User Reference Manual November 2002 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 330-1748 Printed in U.S.A. 2002 Integrated Device Technology, Inc.

IS46DR16320C

Abstract: IS43DR16320C-25DBL IS46DR16320C-25DBLA2 46DR IS43DR16320C-3DBL
Contextual Info: IS43/46DR86400C IS43/46DR16320C 64Mx8, 32Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

ECE1077

Abstract: mec5025 MAX8774 "" schematic lcd inverter dell STAC9205 quanta u36 max8774 EMC4001 Maxim MAX8774 0805 10V X7R 4.7UF quanta
Contextual Info: 5 4 3 2 1 D D Quanta Project Name: JX6 Dell Project Name: MGD Lite 2007-03-01 C C REV : D3B A00/X-Build Stage B B A A Title QUANTA COMPUTER COVER PAGE 5 4 3 2 Size Document Number MGD Date: Friday, March 02, 2007 Rev 3A Sheet 1 1 of 89 1 2 3 4 5 6 JX6 MGD-INTEGRATED

Contextual Info: IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM PRELIMINARY INFORMATION FEBRUARY 2014 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle

is42s86400

Contextual Info: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION APRIL 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

IS42S16320B

Abstract: IS42S86400B
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 JUNE 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

is42s16320

Abstract: IS42S16320A
Contextual Info: IS42S16320A 32Meg x 16 512-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION JUNE 2007 • Clock frequency: 143, 133 MHz OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and

IS43LR32320B-5BLI

Contextual Info: IS43/46LR32320B Advanced Information 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: IS43/46LR32320B Advanced Information 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

IS42S86400B

Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge