8R TRANSISTOR Search Results

2u 62 diode

Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

DTS517

Abstract: BUV28A
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

16R20

Abstract: C166 C166SV2 SAF-XC164N-16F20F SAF-XC164N-16F40F SAF-XC164N-8F40F XC164N XC166 SAF-XC164CS-16F40F BB
Contextual Info: Data Sheet, V1.2, Aug. 2006 XC164N-16F/16R XC164N-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.

SAF-XC164CS-16F40F

Abstract: SAK-XC164CS-16F20F SAK-XC164CS-16F40F circuit diagram of 4 channel long range RF based INFINEON XC164 C166 C166SV2 XC164CS XC166 16R2
Contextual Info: Data Sheet, V2.3, Aug. 2006 XC164CS-16F/16R XC164CS-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.

rf channel trap circuit

Abstract: C166 C166SV2 SAF-XC164D-16F20F SAF-XC164D-16F40F SAF-XC164D-8F40F XC164D XC166
Contextual Info: Data Sheet, V1.2, Aug. 2006 XC164D-16F/16R XC164D-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.

2SA562

Abstract: transistor 2SA562
Contextual Info: VI cc TO-92 P lastic-E n capsu iate T ran sisto rs 2SA562 TRANSISTOR NPN FE ATURES P cm : 0.5W (Tamb=25°C) Icm : -0.5 A É ü li lÉ É y ftMie voltage V(8R)CBO: -35 V storage junction temperature range Tj.Tsig: -55°C to + 150“C ELECTRICAL CHARACTERISTICS

1N4002 smd type

Abstract: HS-509 1N4002 smd 5962-95694 GDIP1-T16 HS-0548RH HS-0549RH CDIP2-T16 MKT .1K
Contextual Info: HS-0548RH, HS-0549RH TM Data Sheet August 2001 Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Overvoltage Protection tle 8R S9R iadle ifn4 nOS ti- The HS-0548RH and HS-0549RH are radiation hardened analog multiplexers with Active Overvoltage Protection and

PG-TQFP-100-5

Abstract: pwm 62d C166 C166SV2 SAF-XC164S-16F20F SAF-XC164S-16F40F SAF-XC164S-8F40F XC164S XC166 pec 632
Contextual Info: Data Sheet, V1.2, Aug. 2006 XC 16 4 S- 1 6 F/ 1 6 R XC164S-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.

S9018 transistor

Abstract: S9018 S9018* transistor S9018 TO92
Contextual Info: M C C TO-92 Plastic-EncapsuSate Transistors S9018 TRANSISTOR NPN FEATURES P cm; 0.31W (Tamb=25°C) Icm: 0.05 A V|8R)CB0: 25 V ► Junction tem perature range T j.T s tg : ELECTRICAL -5 5 “C to + 150°C CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e

VN2410M

Abstract: VN2410L VN2410
Contextual Info: ^Sifconix S S 2 ‘ ~ ìn Gt VN2410 SERIES N-Channel Enhancem ent-M ode MOS Transistors PRODUCT SUMMARY TO-92 PART NUMBER V 8R DSS rDS(ON) (Í1) (V) BOTTOM VIEW <D (A) PACKAGE VN241QL 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 (See Section 7)

FUJI ELECTRIC

Abstract: 2SC4538 2SC4538R
Contextual Info: S P E C I F I CAT I O DEVICE NAME TYPE NAME BIPOLAR TRANSISTOR 2S C 4 5 3 8R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DA T E DRAWN CHECKED NAME APPROVED Fuji Electric C o jid 1/12 Y 025T-R-004a Ratings

BR101

Abstract: transistor T43 npn transistor AG TRANSISTOR n-p-n power transistor planar transistor c 5331 transistor ag philips br101 BR101A Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE D • ^53=131 DDE7&EL 23H BR101 I SILICON CONTROLLED SWITCH The 8R 101 is a planar p-n-p-n switch in a T O -72 metal envelope, intended fo r tim e base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/

ge D45E3

Abstract: D45E3 d45e3 replacement 4cti D41K1 D40C1 D40C2 D40C3 D40C4 D40C5
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 V CEO Min. (V 1 Ccmt. (A l 30 5 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.

D40K1

Abstract: D40KI pnp transistor 800v NPN power transistor 15A amperes D41K1 transistor darlington 800V 10A D40C7 Complementary Darlington Audio Power Amplifier transfor D40C1
Contextual Info: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 Min. (V 1 Ccmt. (A l 30 5 V CEO 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.

diode 437 KZ

Contextual Info: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — KP*g/tt • A S O ^ /a I ' • Îfeifciïfc k BX m In c lu d in g Free W h e e lin g D io d e _ . .

Diode LT 4A 03

Abstract: 600ADC f8cj M106 T151 transistor WT9
Contextual Info: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — • Îfeifciïfc k BX m _ OS: <m[ KP*g/tt • A S O ^ /a I ' In c lu d in g Free W h e e lin g D io d e

BCX18R

Abstract: BCX17 BCX17R BCX18 BCX19
Contextual Info: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS BCX17 BCX18 IS S U E 3 - F E B R U A R Y 1996 P A R T M A R K IN G D E T A IL S - BC X17 -T 1 BCX18 -T 2 B C X 1 7R -T 4 B C X 1 8R -T 5 C O M P L E M E N T A R Y T Y P E S - BC X17 - B C X19 B C X 1 8 - BC X20

JESD22-A114-D

Abstract: JESD22-A114D varistor BETA 22-A114D rf POWER BJTs BGA615L7 BGA622L7 TVS diode Application Note AN086 AN103
Contextual Info: A pp li c at i on N ot e , R ev . 1 . 0 , J un e 2 00 7 A p p li c a t i o n N o t e N o . 1 0 3 E S D a n d A n t e nn a P r o t ec t i o n u s i n g I n f i n eo n E SD 0 P 8R FL R F & P r o t e c ti o n D e v i c e s Edition 2007-06-27 Published by Infineon Technologies AG

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -NOVEMBER94_ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT v CBO 25 V Collector-Emitter Voltage v CEO 25 V Emitter-Base Voltage V EBO 4 V Continuous Collector Current

2sc3440

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3440 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3440 is a super mini silicon NPN epitaxial type transistor Unitmm OUTLINE DRAWING « +0-5 2-5 -0.3 designed with high collector current, small VcE(sat).

LDTC123TWT1G

Abstract: 8R transistor LDTC123T
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC123TWT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

Contextual Info: 1419 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The ten pin TO-5 package, with a 0.230" pin circle is the most accommodating of the TO-5 series of networks. It has the largest R capacity of the smaller TO series. This network can

8R transistor

Contextual Info: 1419 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The ten pin TO-5 package, with a 0.230" pin circle is the most accommodating of the TO-5 series of networks. It has the largest R capacity of the smaller TO series. This network can

Contextual Info: 1419 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The ten pin TO-5 package, with a 0.230" pin circle is the most accommodating of the TO-5 series of networks. It has the largest R capacity of the smaller TO series. This network can