8X20MM Search Results

662 marking

Abstract: A821
Contextual Info: GAS DISCHARGE TUBE 8x20mm No. A821 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Insertable in holders 416 and 740 Specifications Packaging A821: 00=Bulk (100 pcs.) Materials Housing: Gas: Ceramic non-radioactive Arc Voltage @ 1A

820 marking

Abstract: 662 marking A820 Gas discharge tube
Contextual Info: GAS DISCHARGE TUBE 8x20mm No. A820 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Specifications Packaging A820: 00=Bulk (100 pcs.) Materials Housing: Gas: Leads: Ceramic non-radioactive tin plated Arc Voltage @ 1A

gas discharge tube

Abstract: 662 marking UL-497B 820 marking A820
Contextual Info: GAS DISCHARGE TUBE 8x20mm No. A820 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Specifications Packaging A820: 00=Bulk (100 pcs.) Materials Housing: Gas: Leads: Ceramic non-radioactive tin plated Arc Voltage @ 1A

diode 10 35L

Abstract: UT62L256C-35 UT62L256C-70 UT62L256CPC-35L UT62L256CPC-35LL UT62L256CPC-70L UT62L256CPC-70LL UT62L256CSC-35L P80057
Contextual Info:  UTRON Rev. 1.2 UT62L256C 32K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original Rev. 1.0 Sample ready and release Rev. 1.1 1.Add 28-pin 8x20 mm TSOP-I 2.Add 28L 8x20mm TSOP-I outline dimension Rev. 1.2 Add order information for lead free product

NIPPON CAPACITORS

Abstract: TIS149
Contextual Info: 1 NIPPON i MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS I CHEMhCON¡ •Lon g life and high reliability for 4>4X5 to 4>8X20mm range •Endurance with ripple current: 105C 3000 to 6000hours •Suitable for long life and high reliability required products •Solvent-proof type, see page16

a634

Contextual Info:
  
   for ChipCorder Products
                   Table 1: ISD Device Package Options Package Options1 E ISD Series G P S T X W Z 8x13.4mm 0.350 inch 0.600 inch 0.300 inch 8x20mm Die Wafer Chip Scale

662 marking

Abstract: MARKING CODE A821 A821 UL-497B
Contextual Info: GAS DISCHARGE TUBE 8x20mm No. A821 2-electrode 20kA/20A High Discharge Current Series Features Non-radioactive Lead Free Insertable in holders 416 and 740 Specifications Packaging A821: 00=Bulk (100 pcs.) Materials Housing: Gas: Ceramic non-radioactive Arc Voltage @ 1A

tsop32 8x20

Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127
Contextual Info: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AW127B

Abstract: SO32 TSOP32
Contextual Info: M68AW127B 1Mbit 128K x8 , 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

T14L1024N

Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
Contextual Info: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

Contextual Info: HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Insert 70ns Part Jul.25.2000 Final 11 Change the Notch Location of sTSOP

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19

tdb 0139

Abstract: VSOP 28 28LV64A ic 8870 ttl
Contextual Info: 28LV64A 64k 8k x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM I/O0.I/O7 • Read Access Time—300 ns • CMOS Technology for Low Power Dissipation – 8 mA Active – 50 µA CMOS Standby Current • Byte Write Time—3 ms • Data Retention >200 years

ISD2540P

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ISD2500

Abstract: ISD2532-40-48-64
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T15M1024A

Abstract: T15M1024A-100N T15M1024A-100NI T15M1024A-100P T15M1024A-100PI T15M1024A-55D T15M1024A-55DI T15M1024A-70H T15M1024A-70HI
Contextual Info: tm TE CH Preliminary T15M1024A 128K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES • Low-power consumption - Active: 40mA at 55ns - Stand-by: 15uA CMOS input/output • 55/70/100 ns access time GENERAL DESCRIPTION The T15M1024A is a very Low Power CMOS Static RAM organized as 131,072 words by 8 bits.

CS18LV

Abstract: 8X13 CS18LV10245 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC
Contextual Info: High Speed Super Low Power SRAM CS18LV10245 128K-Word By 8 Bit „ DESCRIPTION The CS18LV10245 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 131,072 words by 8bits and operates from a wide range of 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high

EPROM AMD

Abstract: VSOP 28 NM27C256N120 TC54256AF 27c256-15 TEXAS INSTRUMENTS 28/H5GQ1H24MJR-T0C NM27C256N150 27c256-20 TEXAS INSTRUMENTS M27C256B-10C6 27C64-12L
Contextual Info: EPROM EPROM Cross Reference Guide INTRODUCTION The purpose of this document is to provide a quick way to determine which EPROM parts are mechanical and electrical equivalents to Microchip devices. There is also a listing of manufacturer's part numbering schemes to assist in determining the specifications of a

M29W010

Abstract: M29W010B PLCC32 TSOP32
Contextual Info: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING SUPPLY VOLTAGE – 2.7V to 3.6V Supply Voltage for Program, Erase and Read operations FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Device M29F010B

Abstract: M29F010B PDIP32 PLCC32 TSOP32
Contextual Info: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING SUPPLY VOLTAGE – 5V ± 10% Supply Voltage for Program, Erase and Read operations FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAMERASE CONTROLLER (P/E.C.)

Contextual Info: • M ic r o c h ip 27C512A 512K 64K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance • CMOS Technology for low power consumption - 25 mA Active current - 30 ¡iA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

Contextual Info: $ 27LV512 M ic r o c h ip 512K 64K x 8 Low-Voltage CMOS EPROM PACKAGE TYPE FEATURES • W ide voltage range 3.0V to 5.5V • High speed performance - 200 ns access tim e available at 3.0V • CMOS Technology fo r low pow er consum ption - 12 m A Active current at 3.0V

DS11021

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V