8X4MX16 Search Results

XDR Rambus

Abstract: 8x4Mx16
Contextual Info: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low

HYB18H512322BF

Abstract: qimonda hyb18h5
Contextual Info: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet

Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

smd ra6

Abstract: XDR DRAM XDR Rambus SMD fuse BA
Contextual Info: TC59YM816BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Contextual Info: November 2008 IDRD51-0-A1F1C–[32C/40D] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.12 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40D] Revision History: 2008-11, Rev. 1.12 Page Subjects major changes since last revision

014701 b

Abstract: 8x4Mx16
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

8x4Mx16

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

rambus xdr

Contextual Info: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

s34 diode

Abstract: transistor SMD t17 XDR Rambus TPDN SMD fuse BA
Contextual Info: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Rambus XDR

Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

XDR Rambus

Abstract: EDX5116ACSE xdr elpida
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Sony Semiconductor Replacement Handbook 1991

Abstract: sony bx 1387 XDR Rambus transistor D880 yc 2604 replacement toshiba 2685 DL-0171 D880 2006 international 9400 wiring diagram sony x35
Contextual Info: Title Page Cell Broadband Engine CMOS SOI 90 nm Hardware Initialization Guide Version 1.5 November 30, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora- tion 2006, 2007

EDX5116ADSE-3C-E

Abstract: EDX5116ADSE
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

K4Y50024UC

Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.

104BA

Contextual Info: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary

K4Y50084UE-JCB3

Abstract: K4Y50164UE K4Y50164UE-JCB3
Contextual Info: K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE XDRTM DRAM TM 512Mbit XDR DRAM E-die Revision 1.0 Feb., 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EDX5116ACSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Contextual Info: Preliminary K4Y5016 /08/04/02 4UC XDRTM DRAM 512Mbit XDRTM DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

XDR Rambus

Abstract: 8H001
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide

Abstract: Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband
Contextual Info: Title Page Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Version 1.01 June 8, 2007—Preliminary Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora-

xdr rambus

Abstract: SMD fuse BA
Contextual Info: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation