8Y MARKING TRANSISTOR Search Results

FHT9018

Abstract: 8Y SOT23
Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT9018 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 High Frequency Low Noise Amplifier 高頻低噪聲放大 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號

FHT9018

Abstract: 8Y SOT23
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 General Purpose Transistors 三极管 NPN Silicon FHT9018 FEATURES 特点 •High Frequency Low Noise Amplifier

UN1216

Abstract: XN6216
Contextual Info: Composite Transistors XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector Tr1 2 : Base (Tr1)

UN1216

Abstract: XP6216
Contextual Info: Composite Transistors XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1216 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings

DTA123YS3

Abstract: DTC123YS3 R210k MARKING LP SOT-323
Contextual Info: CYStech Electronics Corp. Spec. No. : C362S3 Issued Date : 2002.08.16 Revised Date : 2002.11.02 Page No. : 1/4 General Purpose NPN Digital Transistors Built-in Resistors DTC123YS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external

DTA123YN3

Abstract: DTC123YN3
Contextual Info: CYStech Electronics Corp. Spec. No. : C362N3 Issued Date : 2002.08.16 Revised Date : 2002.11.02 Page No. : 1/4 General Purpose NPN Digital Transistors Built-in Resistors DTC123YN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

UN2216

Abstract: UNR2216 XP06216 XP6216
Contextual Info: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UN1216

Abstract: UNR1216 XN06216 XN6216
Contextual Info: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN2216

Abstract: UNR2216 XP06216 XP6216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 (XP6216) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

UN2216

Abstract: UNR2216 XN06216 XN6216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element

UN1216

Abstract: UNR1216 XP06216 XP6216
Contextual Info: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1216

Abstract: UNR1216 XN06216 XN6216
Contextual Info: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 (XP6216) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

UN1216

Abstract: UNR1216 XP06216 XP6216
Contextual Info: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter

UN2216

Abstract: UNR2216 XN06216 XN6216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05

UNR2216

Abstract: XP06216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)

UNR2216

Abstract: XN06216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package ■ Features 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR2216

Abstract: XP06216
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR2216

Abstract: XN06216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type For switching/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo

SOT23 MARK Y2

Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)