90 VOLTS REGULATOR Search Results

Contextual Info: Insulated Gate Bipolar Transistors Page 1 of 1 Home Package Device Type BVCES Volts IC CONT Amp VCE(sat) Volts tf* ns (typical) CIES q JC pF (typical) ° C/W (typical) TO-254 NSG20640 600@90° C 31 2.0 800 1500 1.25 TO-254 NSG20648A 600@90° C 24 2.9 100

ADP1108

Abstract: ADP1073 ADP1109 ADP1109A ADP1110 ADP1111 ADP1173 ADP3000 LTC1073 voltage 9V to 3,3V
Contextual Info: POWER MANAGEMENT: DC to DC Converters, Switching Regulators, Internal Switch Part Number Vin Volts Vout Volts Vsat Vsat Current @Vin/Iswitch mA @Vin/Iswitch mA Limit V V Input Iq max uA Oscillator Duty Cycle KHz % yes yes yes yes yes yes 165 90 300 110 110

LTC1073

Abstract: DC to DC step down converters 5V to 3.3V DC to DC step down converters 12V to 3.3V ADP1108 ADP1073 ADP1109 ADP1109A ADP1110 ADP1111 ADP1173
Contextual Info: POWER MANAGEMENT: DC to DC Converters, Switching Regulators, Internal Switch Part Number Vin Volts Vout Volts Vsat Vsat @Vin/Iswitch mA @Vin/Iswitch mA V V Current Limit Input Iq max uA Oscillator Duty Cycle KHz % yes yes yes yes yes yes 165 90 300 110 110

equivalent irf840

Abstract: 2SK173 2N6658 BUZ44 vn0106n1 VN64GA BUZ 840 VN0104N4 VN0106N5 IRF232
Contextual Info: Silico n ix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60

VN64GA

Abstract: IRF140 IRF142 IRF141 75 LS 541 IRF143 IRF540 Part number 543 20 018 00 2N6658 IRF130
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

1RF720

Abstract: VN64GA 1rf820 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

VN64GA

Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

VN64GA

Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

irf120

Abstract: VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

1RF820

Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

pn junction DIODE 1N4001

Abstract: ibf830 VN64GA 176j 4502A 2N6658 IRF120 IRF122 IRF130 IRF132
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

1rf830

Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

Contextual Info: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si

i3016

Abstract: N109
Contextual Info: TV FIXED VOLTAGE REGULATORS POSITIVE Regulated Voltage Out Volts VquI NTE Type Number Voltage In (Volts) Diagram Number. Case Style Output Current (Amps) Power Dissipation •o Pd‘ (Walts) V|„ Min Max 4 1 8V ± 0.5V 1840 5-L e a d SIP 453 90 145 2 27

D60T2575

Abstract: D60T2590 1S697 D60T307510 D62T D62T307510 FC75A
Contextual Info: POlüEREX INC Tfl DE j T S ' m a i QOQSbb? 0 ^ M |j r |l J F y IM . » D60T/D62T D60T/D62T Powerex, Inc., Hillls S treet, Youngwoad, Pennsylvania 1S697 412 925-7272 ~ j - 33^15" _ 75 _ 90 NPN Power Switching Transistors 75-90 Amperes 250-500 Volts

2av54

Abstract: 1010-1018 s-av71
Contextual Info: 6,20 MAXIMUM CONDITION 17,16 BY T. 10 mA22 OUTPUT VOLTAGE OPERATED (ON) 0.2 0. VOLTS V OUTPUT LEAKAGE CURRENT 2 (RELEASED) (OFF) 0.2 10 A #0,15 . 25 $ C +0,40 -0,20 DRAWING NUMBER 8 ISSUE CHECK 4 S 1 S 2 S 1 S 10% TO 90% 90% TO 10%# VOLTAGE EXTERNALLY APPLIED TO OUTPUT

MMFT6661T1

Abstract: sot-223 body marking D K Q F
Contextual Info: MOTOROLA Order this document by MMFT6661T1/D SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Hransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 500 mA 90 VOLTS

GE13080T

Abstract: GE13081T GIE13080T GIE13081T SS510
Contextual Info: U ic u CDFPn NPN POWER TRANSISTORS GE13080T GE13081T 400-450 VOLTS 8 AMP, 90 WATTS The GE13080T and GE13081T transistors are designed for high-voltage, high-speed power switching in inductive cir­ cuits where fall time is critical. They are particularly suited for

HEP transistors

Abstract: 2n6576 2N6578
Contextual Info: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:

8P2M

Abstract: 1038A 8p4m
Contextual Info: T H I\ KllSTU'KiS •U C « « * V i* 8P2M,8P4M 8 A(12 Ar m s. THYRISTOR The 8P2M and 8P4M are P gate all diffused mold type Thyristor granted PACKAGE DIMENSIONS 8 Am p On-state Average Current (Tc = 90 °C), with voltages up to 400 in millimeters volts.

2N6576

Abstract: 2N6576 equivalent
Contextual Info: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:

125RGK

Contextual Info: NEC / ELECTRON DEVICE DATA SHEET “ / THYRISTORS . _ /_ 8P4J,8P4J-Z 8 A MOLD THYRISTOR DESCRIPTION The 8P4J and 8P4J-Z are P-gate ail diffu sed m old ty p e T H Y R IS T O R granted average on-state cu rre n t 8 Am ps Tc - 90 cC , w ith rated voltages up to 4 0 0 Volts.

12 volts 3 amps regulator

Abstract: terminal 380v 100 a PT78ST100 PT78ST105 PT78ST112 PT78ST133
Contextual Info: For assistance or to order, call Application Notes Mechanical Outline Product Selector Guide 800 531-5782 PT78ST100 S e r i e s 1.5 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR • • • • • • • Standard Application Vin 1 PT78ST100 C1