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    900 V 6 AMP MOSFET Search Results

    900 V 6 AMP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    900 V 6 AMP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    dd128v

    Abstract: RA45H8994M1-101
    Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz Oct2011 dd128v RA45H8994M1-101

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz

    Untitled

    Abstract: No abstract text available
    Text: Panel Mount DataSheet 1-DCL Series • Ratings from 7A to 40A @ 200 VDC and from 7A to 10A @ 500VDC • Mosfet Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer • Redesigned housing with anti-rotation barriers • DC control


    Original     		PDF 500VDC EN60950-1 D1D20L D1D40L D2D40L D5D10L D1D12L SJ/T11364

    Untitled

    Abstract: No abstract text available
    Text: Panel Mount DataSheet 1-DC Series • Ratings from 7A to 40A @ 200 VDC and from 7A to 10A @ 500VDC • Mosfet Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer • Redesigned housing with anti-rotation barriers • DC control


    Original     		PDF 500VDC EN60950-1 D1D12 D2D12 D4D12 D1D20 D1D40 D2D40 D5D10 D1D07

    BD9870FPS

    Abstract: C6-K3L
    Text: TECHNICAL NOTE High Performance Switching Regulator Series 900kHz Step-down Switching Regulator with Integrated Compensation BD9870FPS ● Description The BD9870FPS single-channel step-down switching regulator incorporates a Pch MOSFET capable of PWM operation at 900kHz,


    Original     		PDF 900kHz BD9870FPS BD9870FPS 900kHz, 900kHz C6-K3L

    Untitled

    Abstract: No abstract text available
    Text: Monolithic 1 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 1A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7551C 16-pin

    Untitled

    Abstract: No abstract text available
    Text: Monolithic 2 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 2A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7562C 16-pin

    AN 7323 IC

    Abstract: 4-Amp BAT54S EL7464CRE-T13 EL7564C EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7564C 20-pin 28-pin EL7564C AN 7323 IC 4-Amp BAT54S EL7464CRE-T13 EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20

    Untitled

    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7564C 20-pin 28-pin EL7564C

    Untitled

    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7564C 20-pin 28-pin EL7564C

    BAT54S

    Abstract: EL7464CRE-T13 EL7564C EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20 C6500 AN 7323 IC
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7564C 20-pin 28-pin EL7564C BAT54S EL7464CRE-T13 EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20 C6500 AN 7323 IC

    Untitled

    Abstract: No abstract text available
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


    Original     		PDF EL7563C 20-pin 28-pin EL7563C

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    BAT54S

    Abstract: EL7563C EL7563CM EL7563CM-T13 EL7563CRE EL7563CRE-T13 EL7563CRE-T7 SO20
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


    Original     		PDF EL7563C 20-pin 28-pin BAT54S EL7563C EL7563CM EL7563CM-T13 EL7563CRE EL7563CRE-T13 EL7563CRE-T7 SO20

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    Untitled

    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


    Original     		PDF EL7564C 20-pin EL7564C

    IRFZ44 equivalent

    Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
    Text: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450


    OCR Scan     		PDF IRFK4H054 IRFK4H150 IRFK4H250 IRFK4H350 IRFK4H450 IRFK4HC50 IRFK4HE50 IRFK4J054 IRFK4J150 IRFK4J250 IRFZ44 equivalent IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034

    TL 650 ht

    Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
    Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching


    OCR Scan     		PDF 4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


    OCR Scan     		PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier

    MTP6N55

    Abstract: MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP2N90 MTP4N90 MTP8N45 irf8408 MTP3N80 irf840
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP6N55 MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP8N45 irf8408 MTP3N80 irf840

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60

    200W MOSFET POWER AMP

    Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 200W MOSFET POWER AMP HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635