900MBPS Search Results

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7962GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Deserializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.

PD10

Abstract: fxs interface integrated circuit BU7962
Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7962GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Deserializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7961GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Serializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.

BU7961

Abstract: PD10
Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7961GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Serializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.

LVDS to MIPI CSI

Abstract: LVDS to mipi bridge MIPI csi-2 mipi csi-2 receiver mipi csi receiver MIPI D-PHY mipi csi-2 transmitter MIPI csi bridge 400x240 MIPI csi-2 receivers
Contextual Info: DS90UR910Q 10 - 75 MHz 24-bit Color FPD-Link II to CSI-2 Converter General Description Features The DS90UR910Q is an interface bridge chip that recovers data from the FPD-Link II serial bit stream and converts into a Camera Serial Interface CSI-2 format compatible with Mobile Industry Processor Interface (MIPI) specifications. It recovers the 24- or 18-bit RGB data and 3 video sync-signals

k4n26323ae

Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Contextual Info: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003

Contextual Info: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

16 QAM modulation matlab code

Abstract: lx5280 CZ80PIO PLD-10 uart 8250 CRC matlab lEXRA lx5280 qpsk simulink matlab OFDM DSP Builder Alcatel dsp
Contextual Info: インテレクチャル・プロパティ・ セレクタ・ガイド System-on-a-Programmable-Chipソリューションの ためのIPファンクション アルテラのIPファンクションについて 数百万ゲートのプログラマブル・ロジック・デバイス（PLD）の登

gddr5

Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
Contextual Info: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

K4N56163QI-ZC25

Contextual Info: 256M gDDR2 SDRAM K4N56163QI 256Mbit gDDR2 SDRAM Revision 1.1 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

HY5PS121621BFP

Abstract: HY5PS121621B HY5PS121621BFP-2
Contextual Info: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004

Contextual Info: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5PS561621AFP-33

Contextual Info: HY5PS561621AF P 256Mb(16Mx16) gDDR2 SDRAM HY5PS561621AF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS561621AFP 256Mb 16Mx16 gDDR2 SDRAM HY5PS561621AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 512M gDDR2 SDRAM K4N51163QE 512Mbit gDDR2 SDRAM Revision 1.3 August 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

amcc volta

Contextual Info: S4814PBI21 Volta 48 FINAL Datasheet Revision 1.13 November 21, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth

K4N56163QF-GC37

Abstract: K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

HY5DW573222F

Contextual Info: HY5DW573222F 256M 8Mx32 GDDR SDRAM HY5DW573222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Feb. 2004

HY5DU113222FM

Contextual Info: HY5DU113222FM P 512M(16Mx32) GDDR SDRAM HY5DU113222FM(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU283222AF-33

Abstract: HY5DU283222AF HY5DU283222AF-2 HY5DU283222AF-22 HY5DU283222AF-25 HY5DU283222AF-28 HY5DU283222AF-36
Contextual Info: HY5DU283222AF P 128M(4Mx32) DDR SDRAM HY5DU283222AF(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU283222AF

Abstract: HY5DU283222AF-2 HY5DU283222AF-28 HY5DU283222AF-36 termal resistor 250 HY5DU283222AFP-33
Contextual Info: HY5DU283222AF P 128M(4Mx32) GDDR SDRAM HY5DU283222AF(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 256M GDDR SDRAM K4D553235F-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 December 2004 Samsung Electronics reserves the right to change products or specification without notice.